Composition for etching

Patent metadata

Field	Value
Publication number	US-2016017224-A1
Application number	US-201514797050-A
Country	US
Kind code	A1
Filing date	Jul 10, 2015
Priority date	Jul 17, 2014
Publication date	Jan 21, 2016
Grant date	—

Abstract

The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

First claim

What is claimed is:

1 . A composition comprising:
a first inorganic acid; at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound; and a solvent, wherein:
the second inorganic acid is at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, an anhydrous phosphoric acid, and a combination thereof; and
the silane compound is a compound represented by a first formula:

where each one of R 1 to R 4 is selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, and at least one of R 1 to R 4 is one of halogen and (C 1 -C 10 ) alkyl.

2 . The composition of claim 1 , wherein the composition comprises about 0.01 to about 15 wt % of the at least one of silane inorganic acid salts, about 70 to about 99 wt % of the first inorganic acid, and a balance of the solvent.

3 . The composition of claim 1 , wherein the first inorganic acid is at least one selected from the group consisting of a sulfuric acid, a nitric acid, a phosphoric acid, a silicic acid, a hydrofluoric acid, a boric acid, a hydrochloric acid, a perchloric acid, and a combination thereof.

4 . The composition of claim 1 , wherein the composition further comprises about 0.01 to about 20 wt % of an ammonium based compound in respect to a total weight of the composition.

5 . The composition of claim 1 , wherein the composition further comprises about 0.01 to about 1 wt % of a fluoride based compound in respect to a total weight of the composition.

6 . A composition comprising:
a first inorganic acid; at least one of silane inorganic acid salts produced by reaction between a polyphosphoric acid and a silane compound; and a solvent.

7 . The composition of claim 6 , wherein the at least one of silane inorganic acid salts includes a compound represented by a second formula:

where i) R 1 is selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, ii) n 1 is one of integer numbers from 1 to 4, iii) m 1 is one of integer numbers from 1 to 10, and iv) each one of R 2 to R 4 is hydrogen.

8 . The composition of claim 7 , wherein in the at least one of silane inorganic acid salts represented by the second formula, one of hydrogens selected from the group consisting of R 2 to R 4 is substituted by a substituent represented by a third formula:

where i) one of R 5 is a coupler to the second formula, ii) the others of R 5 are selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, iii) each one of R 2 to R 4 is hydrogen or substituted by a substituent represented by the third formula, iv) n 2 is one of integer numbers from 0 to 3, and v) m 2 is one of integer numbers from 1 to 10.

9 . A composition comprising:
a first inorganic acid; at least one of siloxane inorganic acid salts generated through reaction between a second inorganic acid and a siloxane compound; and a solvent, wherein the second inorganic acid is one selected from the group consisting of a phosphoric acid, an anhydrous phosphoric acid, a pyrophosphoric acid, a polyphosphoric acid, and a combination thereof.

10 . The composition of claim 9 , wherein the at least one of siloxane inorganic acid salts includes compounds represented by a fourth formula:

where i) each one of R 1 to R 2 is selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, ii) n 1 is one of integer numbers from 0 to 3, iii) n 2 is one of integer numbers from 0 to 2, iv) m 1 is one of integer numbers 0 and 1, v) a sum of n 1 , n 2 , and m 1 is equal or greater than 1 (n 1 +n 2 +m 1 ≧1), vi) l 1 is one of integer numbers from 1 to 10, vii) each one of O 1 to O 3 is one of integer numbers from 0 to 10, and viii) each one of R 3 to R 11 is hydrogen.

11 . The composition of claim 10 , wherein in the at least one of siloxane inorganic acid salts represented by the fourth formula, at least one of hydrogens selected from the group consisting of R 3 to R 11 is substituted by a substituent expressed by a fifth formula:

where i) one of R 12 and R 13 is a coupler to the fourth formula, ii) the others are independently selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, iii) each one of R 3 to R 11 is hydrogen or is substituted by a substituent expressed by the fifth formula, iv) n 3 is one of integer numbers from 0 to 3, v) n 4 is one of integer numbers from 0 to 2, vi) m 1 is one of integer numbers from 0 to 1, vii) l 1 is one of integer numbers from 1 to 10, and viii) each one of O 1 to O 3 is one of integer numbers from 0 to 10.

12 . A composition comprising:
a first inorganic acid; at least one of siloxane inorganic acid salts generated through reaction between a second inorganic acid and a siloxane compound; and a solvent, wherein the second inorganic acid is one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, and a combination thereof.

13 . The composition of claim 12 , wherein the at least one of siloxane inorganic acid salts includes compounds represented by a sixth formula:

where i) each one of R 21 and R 22 is independently selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, ii) n 1 is one of integer numbers from 0 to 3, iii) n 2 is one of integer numbers from 0 to 2, iv) m 1 is one of integer numbers 0 and 1, v) a sum of n 1 , n 2 , and m 1 is equal or greater than 1 (n 1 +n 2 +m 1 ≧1), vi) l 1 is one of integer numbers from 1 to 10, and vii) each one of R 23 to R 25 is hydrogen.

14 . The composition of claim 13 , wherein in the at least one of siloxane inorganic acid salts, at least one of hydrogens selected from the group consisting of R 23 to R 25 is substituted by a substituent expressed by a seventh formula:

where i) one of R 26 and R 27 is a coupler to the sixth formula, ii) the others are independently selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, iii) each one of R 23 to R 25 is hydrogen or is substituted by a substituent expressed by the seventh formula, iv) n 3 is one of integer numbers from 0 to 3, v) n 4 is one of integer numbers from 0 to 2, vi) m 1 is one of integer numbers from 0 to 1, and vii) l 1 is one of integer numbers from 1 to 10.

15 . A composition comprising:
a first inorganic acid; at least one of siloxane inorganic acid salts produced through reaction induced between a second inorganic acid including a nitric acid and a siloxane compou

Assignees

• Soulbrain Co Ltd

Inventors

• Lee Jin Uk
• Park Jae Wan
• Lim Jung Hun

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/3216

  Nitrides · CPC title

• C09K13/06 Primary

  with organic material · CPC title

• H10D30/0411

  of FETs having floating gates · CPC title