Method of selectively forming cobalt metal layer by using cobalt compound, and method of fabricating semiconductor device by using cobalt compound

Patent metadata

Field	Value
Publication number	US-12398166-B2
Application number	US-202318139053-A
Country	US
Kind code	B2
Filing date	Apr 25, 2023
Priority date	Jul 31, 2019
Publication date	Aug 26, 2025
Grant date	Aug 26, 2025

Abstract

A method of selectively forming a cobalt metal layer includes supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto, and supplying a reducing gas to selectively form a cobalt metal layer on the wiring line,

First claim

What is claimed is:

1. A method of selectively forming a cobalt metal layer, the method comprising:
supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto; and
supplying a reducing gas to selectively form a cobalt metal layer on the wiring line,

wherein, in Chemical Formula (1), L is a group represented by the following Chemical Formula:

and R 1 and R 2 are each independently a C1 to C8 linear or branched alkyl group in which there is no substitution or wherein a hydrogen atom is substituted with a halogen atom.

2. The method as claimed in claim 1 , wherein the late transition metal comprises at least one selected from the group of copper (Cu), cobalt (Co), platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), silver (Ag), gold (Au), ruthenium (Ru), and alloys thereof.

3. The method as claimed in claim 1 , wherein a temperature of the substrate is about 80° C. to 500° C.

4. The method as claimed in claim 1 , wherein the wiring line is on a layer that includes at least one film selected from the group consisting of a silicon nitride film, a silicon oxide film, a copper oxide film, a titanium nitride film, a titanium oxide film, a tantalum nitride film, a tantalum oxide film, a ruthenium oxide film, a zirconium oxide film, a hafnium oxide film, and a lanthanum oxide film.

5. The method as claimed in claim 1 ,
wherein the cobalt metal layer includes carbon in an amount of about 3 wt % or less, and
wherein the method further comprises using the cobalt metal layer without post-treating the cobalt metal layer by annealing or plasma treatment.

6. The method as claimed in claim 1 , wherein a selectivity of the cobalt metal layer with respect to formation on the wiring line versus the isolation film is 60:1 or more.

7. The method as claimed in claim 6 , wherein the cobalt metal layer is not substantially formed on the isolation film.

8. The method as claimed in claim 1 , wherein, in Chemical Formula (1), R 1 and R 2 are each independently a methyl group, a monofluoromethyl group, a difluoromethyl group, a trifluoromethyl group, an ethyl group, a monofluoroethyl group, a difluoroethyl group, a trifluoroethyl group, or a tetrafluoroethyl group.

9. The method as claimed in claim 1 , wherein the supplying of the cobalt compound at least partially overlaps the supplying of the reducing gas in terms of time.

10. The method as claimed in claim 1 , wherein:
the supplying of the cobalt compound and the supplying of the reducing gas are sequentially performed, and
the method further comprises, between the supplying of the cobalt compound and the supplying of the reducing gas, purging a space over the substrate.

11. A method of fabricating a semiconductor device, the method comprising:
providing a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto;
supplying a cobalt compound represented by Chemical Formula (1) onto the substrate;
supplying a reducing gas to selectively form a cobalt metal layer on the wiring line; and
forming an insulating layer on the cobalt metal layer,

wherein, in Chemical Formula (1), L is represented by the following Chemical Formula:

and R 1 and R 2 are each independently a C1 to C8 linear or branched alkyl group, in which there is no substitution, or wherein a hydrogen atom is substituted with a halogen atom.

12. The method as claimed in claim 11 , wherein the cobalt metal layer is an electrical conductor.

13. The method as claimed in claim 11 , wherein, in Chemical Formula (1), R 1 and R 2 are each independently a methyl group, a monofluoromethyl group, a difluoromethyl group, a trifluoromethyl group, an ethyl group, a monofluoroethyl group, a difluoroethyl group, a trifluoroethyl group, or a tetrafluoroethyl group.

14. A method of selectively forming a cobalt metal layer, the method comprising:
supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a copper wiring line and an isolation film adjacent thereto; and
supplying a reducing gas to selectively form a cobalt metal layer on the copper wiring line,

wherein, in Chemical Formula (1), R 1 and R 2 are each independently a methyl group or a trifluoromethyl group, and L is represented by the following Chemical Formula:

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Soyoung
• Nihei Hiroshi
• Shirai Masashi
• Lim Jaesoon
• Cho Younjoung

Classifications

• H10W20/4437

  the principal metal being a transition metal · CPC title

• H10P14/432

  using selective deposition · CPC title

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10W20/037

  the barrier, adhesion or liner layers being on top of a main fill metal · CPC title

• H10P14/46 Primary

  using a liquid · CPC title