Gradient metal liner for interconnect structures
US-2024332075-A1 · Oct 3, 2024 · US
the barrier, adhesion or liner layers being on top of a main fill metal
the barrier, adhesion or liner layers being on top of a main fill metal · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10W20/037 |
| Official title | {the barrier, adhesion or liner layers being on top of a main fill metal} |
| Display label | the barrier, adhesion or liner layers being on top of a main fill metal |
| Total patents | 2,619 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 191 |
| 2016 | 190 |
| 2017 | 208 |
| 2018 | 213 |
| 2019 | 230 |
| 2020 | 257 |
| 2021 | 265 |
| 2022 | 278 |
| 2023 | 272 |
| 2024 | 250 |
| 2025 | 230 |
| 2026 | 35 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Air gap spacer formation for nano-scale semiconductor devices
US-2024079266-A1 · Mar 7, 2024 · US
Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US-2024030035-A1 · Jan 25, 2024 · US
Method to etch cu/Ta/TaN selectively using dilute aqueous Hf/hCl solution
US-9224639-B2 · Dec 29, 2015 · US
Interconnect structure for semiconductor devices
US-9219036-B2 · Dec 22, 2015 · US
Self-aligned interconnect with protection layer
US-2015364371-A1 · Dec 17, 2015 · US
Substrate including selectively formed barrier layer
US-2015348831-A1 · Dec 3, 2015 · US
Method to etch cu/Ta/TaN selectively using dilute aqueous Hf/hCl solution
US-2015348833-A1 · Dec 3, 2015 · US
Reduced capacitance interlayer structures and fabrication methods
US-2015348907-A1 · Dec 3, 2015 · US
Semiconductor devices with copper interconnects and methods for fabricating same
US-9190323-B2 · Nov 17, 2015 · US
Plating bath for electroless deposition of nickel layers
US-9175399-B2 · Nov 3, 2015 · US
Interconnection Structure And Method For Semiconductor Device
US-2015311152-A1 · Oct 29, 2015 · US
Semiconductor device having three-dimensional structure and method of manufacturing the same
US-2015303211-A1 · Oct 22, 2015 · US
Semiconductor arrangement and method of making the same
US-2015303140-A1 · Oct 22, 2015 · US
Interconnection structure for an integrated circuit
US-9165883-B2 · Oct 20, 2015 · US
Interconnects with fully clad lines
US-9165824-B2 · Oct 20, 2015 · US
Graphene interconnection and method of manufacturing the same
US-9159615-B2 · Oct 13, 2015 · US
Microelectronic structure including air gap
US-2015289361-A1 · Oct 8, 2015 · US
Two-step deposition with improved selectivity
US-2015275374-A1 · Oct 1, 2015 · US
Wet etching methods for copper removal and planarization in semiconductor processing
US-2015267306-A1 · Sep 24, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10W20/037?
- CPC H10W20/037 is the Cooperative Patent Classification code for “the barrier, adhesion or liner layers being on top of a main fill metal.”
- How many patents are filed under CPC H10W20/037 (the barrier, adhesion or liner layers being on top of a main fill metal)?
- Our database includes 2,619 publications tagged with this CPC code.
- Is patent activity under CPC H10W20/037 growing?
- Publication counts under this code: 250 in 2024 vs 230 in 2025 (latest complete years).