Methods of forming a transition metal containing film on a substrate by a cyclical deposition process

Patent metadata

Field	Value
Publication number	US-11390946-B2
Application number	US-202016736336-A
Country	US
Kind code	B2
Filing date	Jan 7, 2020
Priority date	Jan 17, 2019
Publication date	Jul 19, 2022
Grant date	Jul 19, 2022

Abstract

Methods of forming a transition metal containing film on a substrate by a cyclical deposition process are disclosed. The methods may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. The deposition methods may also include forming a transition metal containing film with an electrical resistivity of less than 50 μΩ-cm at a film thickness of less than 50 nanometers.

First claim

What is claimed is:

1. A method of forming a transition metal containing film on a substrate by a cyclical deposition process, the method comprising:
contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and
contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor;
wherein the transition metal containing film has an electrical resistivity of less than 50 μΩ-cm at a film thickness of less than 50 nanometers.

2. The method of claim 1 , wherein the adduct ligand comprises two nitrogen atoms, each of nitrogen atoms bonded to at least one carbon atom.

3. The method of claim 1 , wherein the transition metal halide compound comprise a transition metal chloride.

4. The method of claim 3 , wherein the transition metal chloride compound comprises at least one of a cobalt chloride, or a nickel chloride.

5. The method of claim 4 , wherein the transition metal chloride compound comprises at least one of cobalt chloride (TMEDA) or nickel chloride (TMPDA).

6. The method of claim 1 , wherein the reducing agent precursor is selected from the group consisting of: tertiary butyl hydrazine (C 4 H 12 N 2 ), hydrogen (H 2 ), a hydrogen (H 2 ) plasma, ammonia (NH 3 ), an ammonia (NH 3 ) plasma, hydrazine (N 2 H 4 ), silane (SiH 4 ), disilane (Si 2 H 6 ), trisilane (Si 3 H 8 ), germane (GeH 4 ), digermane (Ge 2 H 6 ), borane (BH 3 ), and diborane (B 2 H 6 ).

7. The method of claim 6 , wherein the reducing agent precursor comprises tertiary butyl hydrazine (C 4 H 12 N 2 ).

8. The method of claim 1 , wherein the transition metal containing film comprises both an elemental transition metal and a transition metal nitride.

9. The method of claim 8 , wherein the transition metal containing film comprises both elemental nickel and a nickel nitride.

10. The method of claim 9 , wherein the nickel nitride comprises Ni 6 N 2 .

11. The method of claim 8 , wherein the transition metal containing film comprises both elemental cobalt and a cobalt nitride.

12. The method of claim 1 , wherein the cyclical deposition process comprises an atomic layer deposition process.

13. The method of claim 1 , wherein the cyclical deposition process comprises a cyclical chemical vapor deposition process.

14. The method of claim 1 , wherein the transition metal containing film has an electrical resistivity of less than 10 μΩ-cm at a film thickness of less than 35 nanometers.

15. The method of claim 1 , wherein the transition metal containing film has an electrical resistivity of less than 15 μΩ-cm at a film thickness of less than 15 nanometers.

16. The method of claim 1 , further comprising heating the substrate to a temperature less than 250° C.

17. The method of claim 1 , further comprising heating the transition metal containing film post deposition.

18. The method of claim 17 , wherein the transition metal containing film is heated to a temperature of less than 800° C.

19. The method of claim 1 , wherein the reducing agent precursor is selected from the group consisting of substituted hydrazines.

20. The method of claim 1 , wherein the reducing agent precursor is selected from the group consisting of alkyl-hydrazines.

Assignees

• Asm Ip Holding Bv

Inventors

• Hatanpää Timo
• Väyrynen Katja
• Ritala Mikko
• Leskelä Markku

Classifications

• C23C16/14

  Deposition of only one other metal element · CPC title

• C23C16/45553 Primary

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/10

  Deposition of chromium only · CPC title

• C23C16/45536

  Use of plasma, radiation or electromagnetic fields · CPC title

• C23C16/56

  After-treatment · CPC title