Selective deposition

Patent metadata

Field	Value
Publication number	US-9816180-B2
Application number	US-201615013637-A
Country	US
Kind code	B2
Filing date	Feb 2, 2016
Priority date	Feb 3, 2015
Publication date	Nov 14, 2017
Grant date	Nov 14, 2017

Abstract

Methods are provided for selectively depositing a surface of a substrate relative to a second, different surface. An exemplary deposition method can include selectively depositing a material, such as a material comprising nickel, nickel nitride, cobalt, iron, and/or titanium oxide on a first surface, such as a SiO 2 surface, relative to a second, different surface, such as a H-terminated surface, of the same substrate. Methods can include treating a surface of the substrate to provide H-terminations prior to deposition.

First claim

We claim:

1. A deposition method comprising:
providing a substrate comprising a first surface and a second, chemically different surface, wherein the first surface comprises at least one AH x termination, where A is one or more of N, O, or S and x is from 1 to 2, and the second surface comprises Si—H X terminations surface, where x is from 1 to 3; and
contacting the first surface and the second surface of the substrate with a first vapor phase precursor comprising Ni, Ti, Fe, or Co;
thereby selectively depositing a material comprising Ni, Ti, Fe, or Co on the first surface of the substrate relative to the second surface of the same substrate.

2. The method of claim 1 , wherein the selectively deposited material comprises Ni or Co.

3. The method of claim 1 , wherein selectively depositing further comprises contacting the substrate with a second vapor phase reactant.

4. The method of claim 1 , wherein the second surface comprising Si—H x terminations is formed by treating at least a portion of the substrate surface prior to depositing the material.

5. The method of claim 1 , wherein the second surface comprising Si—H x terminations is formed by treating at least a portion of the substrate surface with a HF etch.

6. The method of claim 1 , wherein the second surface comprising Si—H x terminations is formed by treating at least a portion of the substrate surface with a silicon compound comprising ClSiH 3 or (R I R II N)SiH 3 , where R I and R II are independently selected from C 1 -C 4 alkyls, such as methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl.

7. The method of claim 1 , wherein the first surface comprises at least one OH-termination.

8. The method of claim 1 , wherein the first surface comprises SiO 2 .

9. The method of claim 1 , wherein the first surface is a low-k insulator.

10. The method of claim 1 , wherein the first surface comprises silicon oxide, silicon nitride, silicon oxynitride, fluorinated silica glass, carbon doped silicon oxide, or another material comprising at least 50% silicon oxide.

11. The method of claim 1 , wherein the material comprising Ni, Ti, Fe, or Co is selectively deposited on the first surface relative to the second surface comprising Si—H x terminations with a selectivity of at least 90%.

12. The method of claim 1 , further comprising etching the substrate to remove any material comprising Ni, Ti, Fe, or Co from the second H-terminated silicon surface of the substrate.

13. The method of claim 1 , wherein the deposition method is an ALD or CVD process.

14. The method of claim 13 , wherein the selective deposition process is an ALD process.

15. A method of selectively depositing a material comprising Ni, Ti, Fe, or Co on a substrate, the method comprising:
providing a substrate comprising a first surface comprising silicon oxide;
etching at least a portion of the first surface to thereby provide a second H-terminated silicon surface; and
selectively depositing a material comprising Ni, Ti, Fe, or Co on the first surface comprising silicon oxide relative to the second H-terminated silicon surface.

16. The method of claim 15 , wherein the method of selectively depositing a material comprising Ni, TI, Fe, or Co on a substrate is an ALD or CVD process.

17. The method of claim 15 , wherein etching at least a portion of the first surface comprises exposing said portion of the first surface to HF.

18. The method of claim 15 , wherein the material comprising Ni, Ti, Fe, or Co film is selectively deposited on the first surface relative to the second H-terminated silicon surface with a selectivity of at least 90%.

19. A method for selectively forming SiO 2 on a substrate comprising:
selectively depositing material comprising Ni, Ti, Fe, or Co on a first surface of the substrate relative to a second H-terminated silicon surface of the same substrate, wherein the first surface comprises at least an AH x termination, where A is one or more of O, N and S and x is from 1 to 2;
selectively depositing SiO 2 on the second H-terminated silicon surface of the substrate relative to the first surface of the same substrate.

20. The method of claim 19 , wherein the first surface comprises an OH-terminated surface.

21. The method of claim 19 , wherein the first surface comprises silicon oxide.

22. The method of claim 19 , wherein the second H-terminated silicon surface comprises —SiH, —SiH 2 , or —SiH 3 surface terminations.

23. The method of claim 19 , wherein SiO 2 is selectively deposited on the second H-terminated silicon surface of the substrate relative to the first surface by a PEALD or thermal ALD process.

24. The method of claim 19 , wherein the method further comprises etching the substrate to remove the material comprising Ni, Ti, Fe, or Co from the substrate.

25. The method of claim 24 , wherein etching the substrate comprises exposing the substrate to at least one of HCl, HNO 3 , or H 2 SO 4 :H 2 O 2 .

Assignees

• Asm Ip Holding Bv

Inventors

• Haukka Suvi P
• Tois Eva

Classifications

• C23C16/04 Primary

  Coating on selected surface areas, e.g. using masks · CPC title

• C23C16/45525

  Atomic layer deposition [ALD] · CPC title

• C23C16/0227

  by cleaning or etching · CPC title

• C23C16/402

  Silicon dioxide · CPC title

• C23C16/06

  characterised by the deposition of metallic material · CPC title