Method of forming capacitor and method of manufacturing DRAM element by using the same
US-12593434-B2 · Mar 31, 2026 · US
This page is not indexed by search engines while we improve data quality.
Lim Jaesoon patents
Lim Jaesoon is listed as an inventor on 31 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Lim Jaesoon |
| Total patents | 31 |
| First publication | Dec 20, 2018 |
| Latest publication | Mar 31, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Capacitor and memory device
US-12453077-B2 · Oct 21, 2025 · US
Method of selectively forming cobalt metal layer by using cobalt compound, and method of fabricating semiconductor device by using cobalt compound
US-12398166-B2 · Aug 26, 2025 · US
Capacitor and memory device
US-2025248022-A1 · Jul 31, 2025 · US
Integrated circuit device and method of manufacturing the same
US-2025192006-A1 · Jun 12, 2025 · US
Capacitor and memory device
US-2024315003-A1 · Sep 19, 2024 · US
Capacitor and memory device
US-12029027-B2 · Jul 2, 2024 · US
Semiconductor device
US-2024162281-A1 · May 16, 2024 · US
Method of forming film and method of manufacturing semiconductor device using the same
US-2024021427-A1 · Jan 18, 2024 · US
Method of forming capacitor and method of manufacturing dram element by using the same
US-2023363135-A1 · Nov 9, 2023 · US
Recent patents
Latest publications not already listed above.
Capacitor and memory device
US-2023328958-A1 · Oct 12, 2023 · US
Method of selectively forming cobalt metal layer by using cobalt compound, and method of fabricating semiconductor device by using cobalt compound
US-2023257409-A1 · Aug 17, 2023 · US
Semiconductor device
US-2023225112-A1 · Jul 13, 2023 · US
Capacitor and DRAM device including the same
US-11678476-B2 · Jun 13, 2023 · US
Metal compounds and methods of fabricating semiconductor devices using the same
US-11524973-B2 · Dec 13, 2022 · US
Niobium compound and method of forming thin film
US-11466043-B2 · Oct 11, 2022 · US
Aluminum compound and method for manufacturing semiconductor device using the same
US-11332486-B2 · May 17, 2022 · US
Capacitor and dram device including the same
US-2022093603-A1 · Mar 24, 2022 · US
Cobalt precursor and methods for manufacture using the same
US-11254698-B2 · Feb 22, 2022 · US
Method of manufacturing semiconductor device
US-11081389-B2 · Aug 3, 2021 · US
Niobium compound and method of forming thin film
US-2021040130-A1 · Feb 11, 2021 · US
Method of selectively forming cobalt metal layer by using cobalt compound, and method of fabricating semiconductor device by using cobalt compound
US-2021032279-A1 · Feb 4, 2021 · US
Tungsten precursor and method of forming Tungsten containing layer using the same
US-10900119-B2 · Jan 26, 2021 · US
Method of fabricating semiconductor device
US-10847362-B2 · Nov 24, 2020 · US
Metal compounds and methods of fabricating semiconductor devices using the same
US-2020361970-A1 · Nov 19, 2020 · US
Cobalt precursor and methods for manufacture using the same
US-2020339618-A1 · Oct 29, 2020 · US
Method of manufacturing semiconductor device
US-2020273747-A1 · Aug 27, 2020 · US
Tin compound, tin precursor compound for forming a tin-containing layer, and methods of forming a thin layer using the same
US-2020231610-A1 · Jul 23, 2020 · US
Aluminum compound and method for manufacturing semiconductor device using the same
US-2020207790-A1 · Jul 2, 2020 · US
Method of fabricating semiconductor device
US-2019304770-A1 · Oct 3, 2019 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Samsung Electronics Co Ltd | 31 |
| Adeka Corp | 8 |
| Dnf Co Ltd | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10B12/033 | 16 |
| H10D1/716 | 16 |
| C23C16/45553 | 15 |
| C23C16/405 | 12 |
| H10B12/315 | 12 |