Capacitive microelectromechanical device and method for forming a capacitive microelectromechanical device

Patent metadata

Field	Value
Publication number	US-12332271-B2
Application number	US-202217851292-A
Country	US
Kind code	B2
Filing date	Jun 28, 2022
Priority date	Jul 7, 2015
Publication date	Jun 17, 2025
Grant date	Jun 17, 2025

Abstract

A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

First claim

What is claimed is:

1. A capacitive microelectromechanical device, comprising:
a semiconductor substrate comprising a base portion and sidewall portions that extend from the base portion, wherein a recess is defined by the base portion and the sidewall portions;
a support structure arranged within the recess, wherein the support structure is fixedly connected to the base portion of the semiconductor substrate and a longest dimension of the support structure extends from the base portion in a direction parallel with the sidewall portions;
an electrode element fixedly connected directly to the support structure, wherein the electrode element is a plate having a thickness dimension that extends in the direction parallel to the sidewall portions, wherein the support structure extends from the base portion through the electrode element along the thickness dimension;
a spring element arranged within the recess and connected to the support structure;
a seismic mass arranged within the recess and connected to the support structure by the spring element so that the seismic mass is displaceable with respect to the electrode element in the direction parallel to the sidewall portions; and
wherein the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element, the displacement being measured in the direction parallel to the sidewall portions.

2. The capacitive microelectromechanical device according to claim 1 , wherein the electrode element has an opening formed through the thickness dimension of the electrode element, the opening being configured to receive the support structure, wherein the support structure is inserted through the opening.

3. The capacitive microelectromechanical device according to claim 2 , further comprising:
a sealing element arranged over the recess and coupled to the sidewall portions of the semiconductor substrate and configured to hermetically seal the recess such that the support structure, the electrode element, and the seismic mass are arranged within a footprint of the hermetically sealed recess,
wherein the support structure extends through the thickness dimension of the electrode element via the opening and extends to the sealing element to which the support structure is fixedly coupled.

4. The capacitive microelectromechanical device according to claim 1 , wherein the support structure extends through the electrode element and protrudes from a surface of the electrode element that is outwardly facing from the base portion.

5. The capacitive microelectromechanical device according to claim 4 , further comprising:
a sealing element arranged over the recess and coupled to the sidewall portions of the semiconductor substrate and configured to hermetically seal the recess such that the support structure, the electrode element, and the seismic mass are arranged within a footprint of the hermetically sealed recess,
wherein the support structure extends through the thickness dimension of the electrode element and extends to the sealing element to which the support structure is fixedly coupled.

6. The capacitive microelectromechanical device according to claim 1 , wherein the semiconductor substrate, the support structure, the spring element, and the seismic mass form a unitary structure formed of a semiconductor material.

7. The capacitive microelectromechanical device according to claim 1 , wherein the electrode element, the support structure, the spring element, and the seismic mass are formed of polycrystalline silicon.

8. The capacitive microelectromechanical device according to claim 1 , wherein the electrode element is electrically connected to the support structure such that a sensor signal indicating a current capacitance of the capacitor or a charge of the current capacitance of the capacitor is transmitted from the capacitor, through the support structure, to the semiconductor substrate.

9. A capacitive microelectromechanical device, comprising:
a semiconductor substrate comprising a base portion and sidewall portions that extend from the base portion, wherein a recess is defined by the base portion and the sidewall portions;
a support structure arranged within the recess, wherein the support structure is fixedly connected to the base portion of the semiconductor substrate and a longest dimension of the support structure extends from the base portion in a direction parallel with the sidewall portions;
an electrode element fixedly connected to the support structure, wherein the electrode element is a plate having a thickness dimension that extends in the direction parallel to the sidewall portions, wherein the support structure extends from the base portion through the electrode element along the thickness dimension;
a spacer element arranged between and connected directly to both the support structure and the electrode element;
a spring element arranged within the recess and connected to the support structure;
a seismic mass arranged within the recess and connected to the support structure by the spring element so that the seismic mass is displaceable with respect to the electrode element in the direction parallel to the sidewall portions; and
wherein the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element, the displacement being measured in the direction parallel to the sidewall portions.

10. The capacitive microelectromechanical device according to claim 9 , wherein the spacer element forms a gap between the electrode element and the seismic mass such that the capacitor is formed by the electrode element and the seismic mass.

11. The capacitive microelectromechanical device according to claim 10 , wherein the spacer element is configured to form a dielectric isolation between the electrode element and the support structure, such that the spacer element is configured to prevent charge carriers from moving from the electrode element to the support structure.

12. The capacitive microelectromechanical device according to claim 9 , wherein the semiconductor substrate, the support structure, the spring element, and the seismic mass form a unitary structure formed of a semiconductor material.

13. The capacitive microelectromechanical device according to claim 9 , wherein the electrode element, the support structure, the spring element, and the seismic mass are formed of polycrystalline silicon.

Assignees

• Infineon Technologies Ag

Inventors

• Kautzsch Thoralf
• Bieselt Steffen
• Froehlich Heiko
• Roeth Andre
• Stegemann Maik
• Vogt Mirko
• Winkler Bernhard

Classifications

• H10P14/40

  of conductive or resistive materials · CPC title

• H10P14/00

  Formation of materials, e.g. in the shape of layers or pillars · CPC title

• H10W20/058

  by depositing on sacrificial masks, e.g. using lift-off · CPC title

• B81C2201/0105

  Sacrificial layer · CPC title

• B81C2201/013

  Etching · CPC title