Capacitive microelectromechanical device and method for forming a capacitive microelectromechanical device

Patent metadata

Field	Value
Publication number	US-10684306-B2
Application number	US-201615200299-A
Country	US
Kind code	B2
Filing date	Jul 1, 2016
Priority date	Jul 7, 2015
Publication date	Jun 16, 2020
Grant date	Jun 16, 2020

Abstract

A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

First claim

What is claimed is:

1. A capacitive microelectromechanical device comprising:
a semiconductor substrate comprising a base portion and sidewall portions that extend from the base portion, wherein a recess is defined by the base portion and the sidewall portions;
a support structure arranged within the recess and having a first end and a second end located opposite to the first end, wherein the first end of the support structure is fixedly connected directly to the base portion of the semiconductor substrate, wherein the support structure extends from the first end to the second end in a direction parallel to the sidewall portions;
an electrode element fixedly connected directly to the support structure, proximate to the second end of the support structure;
a spring element arranged within the recess and connected to the support structure;
a seismic mass arranged within the recess and connected to the support structure by the spring element so that the seismic mass is displaceable with respect to the electrode element in the direction parallel to the sidewall portions, wherein the seismic mass is located between the electrode element and the semiconductor substrate; and
wherein the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element, the displacement being measured in the direction parallel to the sidewall portions.

2. The capacitive microelectromechanical device according to claim 1 , wherein the support structure, the electrode element, the spring element, and the seismic mass are arranged entirely within a footprint of the recess.

3. The capacitive microelectromechanical device according to claim 2 , wherein the support structure is mechanically connected to a bottom of the recess at the base portion of the semiconductor substrate.

4. The capacitive microelectromechanical device according to claim 1 , wherein a volume of the support structure is at least 10 times smaller compared to a volume of the seismic mass.

5. The capacitive microelectromechanical device according to claim 1 , wherein a cross-sectional area of the support structure at the first end of the support structure is at least 4 times smaller compared to a main surface area of the seismic mass.

6. The capacitive microelectromechanical device according to claim 1 , further comprising:
a reinforcement structure fixedly connected to the support structure, configured to reinforce the electrode element such that the electrode element is arranged in a fixed position with respect to the semiconductor substrate or the support structure.

7. The capacitive microelectromechanical device according to claim 6 , wherein the seismic mass is structured such that a residual portion of the seismic mass forms the reinforcement structure, wherein the capacitive microelectromechanical device further comprises a spacer element coupled to the reinforcement structure to form a gap between the electrode element and the seismic mass such that the capacitor is formed by the electrode element and the seismic mass.

8. The capacitive microelectromechanical device according to claim 7 , wherein the spacer element is configured to form a dielectric isolation between the electrode element and the reinforcement structure, such that the spacer element is configured to prevent charge carriers from moving from the electrode element to the reinforcement structure.

9. The capacitive microelectromechanical device according to claim 1 , wherein a further electrode element is formed in the seismic mass using doping or on the seismic mass using deposition of a layer structure comprising an electrically conductive material.

10. The capacitive microelectromechanical device according to claim 1 , wherein the electrode element is electrically connected to the support structure such that a sensor signal indicating a current capacitance of the capacitor or a charge of the current capacitance of the capacitor is transmitted from the capacitor, through the support structure, to the semiconductor substrate.

11. The capacitive microelectromechanical device according to claim 1 , further comprising:
a sealing element arranged over the recess and coupled to the sidewall portions of the semiconductor substrate and configured to hermetically seal the recess such that the support structure, the electrode element, and the seismic mass are arranged within a footprint of the hermetically sealed recess.

12. The capacitive microelectromechanical device according to claim 11 , wherein the support structure is mechanically connected to the semiconductor substrate and the sealing element.

13. The capacitive microelectromechanical device according to claim 1 , wherein the seismic mass is a silicon-on-nothing structure.

14. The capacitive microelectromechanical device according to claim 1 , wherein:
the semiconductor substrate includes main surface to which the support structure is fixedly connected, and
the electrode element includes a main surface that extends parallel to the main surface of the semiconductor substrate and to which the support structure is fixedly connected.

15. The capacitive microelectromechanical device according to claim 14 , wherein the seismic mass is displaceable with respect to the electrode element in a direction orthogonal to the main surface of the electrode element.

16. The capacitive microelectromechanical device according to claim 1 , wherein the semiconductor substrate, the support structure, the spring element, and the seismic mass form a unitary structure formed of a semiconductor material.

17. The capacitive microelectromechanical device according to claim 16 , wherein the electrode element comprises a conducting material that is different from the semiconductor material.

18. The capacitive microelectromechanical device according to claim 1 , wherein the electrode element, the support structure, the spring element, and the seismic mass are formed of polycrystalline silicon.

19. The capacitive microelectromechanical device according to claim 1 , wherein the electrode element is a plate having an opening formed through a thickness dimension of the electrode element, the opening being configured to receive the support structure, wherein the support structure is inserted through the opening.

20. The capacitive microelectromechanical device according to claim 19 , further comprising:
a sealing element arranged over the recess and coupled to the sidewall portions of the semiconductor substrate and configured to hermetically seal the recess such that the support structure, the electrode element, and the seismic mass are arranged within a footprint of the hermetically sealed recess,
wherein the support structure extends through the electrode element and extends to the sealing element to which the second end of the support structure is directly coupled.

Assignees

• Infineon Technologies Ag

Inventors

• Bieselt Steffen
• Froehlich Heiko
• Kautzsch Thoralf
• Roeth Andre
• Stegemann Maik
• Vogt Mirko
• Winkler Bernhard

Classifications

• H10P14/40

  of conductive or resistive materials · CPC title

• H10P14/00

  Formation of materials, e.g. in the shape of layers or pillars · CPC title

• H10W20/058

  by depositing on sacrificial masks, e.g. using lift-off · CPC title

• B81C2201/0105

  Sacrificial layer · CPC title

• B81C2201/013

  Etching · CPC title