Method for forming a PCRAM with low reset current

Patent metadata

Field	Value
Publication number	US-9178138-B2
Application number	US-201414324703-A
Country	US
Kind code	B2
Filing date	Jul 7, 2014
Priority date	Jul 31, 2012
Publication date	Nov 3, 2015
Grant date	Nov 3, 2015

Abstract

Phase-change memory structures are formed with ultra-thin heater liners and ultra-thin phase-change layers, thereby increasing heating capacities and lowering reset currents. Embodiments include forming a first interlayer dielectric (ILD) over a bottom electrode, removing a portion of the first ILD, forming a cell area, forming a u-shaped heater liner within the cell area, forming an interlayer dielectric structure within the u-shaped heater liner, the interlayer dielectric structure including a protruding portion extending above a top surface of the first ILD, forming a phase-change layer on side surfaces of the protruding portion and/or on the first ILD surrounding the protruding portion, and forming a dielectric spacer surrounding the protruding portion.

First claim

What is claimed is:

1. A device comprising:
a bottom electrode;
a u-shaped heater liner;
an interlayer dielectric (ILD) on the bottom electrode, surrounding the u-shaped heater liner;
an interlayer dielectric structure surrounded by the u-shaped heater liner and including a protrusion extending above the u-shaped heater liner and a top surface of the ILD;
a phase-change layer on the ILD, surrounding the interlayer dielectric structure;
a dielectric spacer above the ILD a…

Assignees

• Globalfoundries Sg Pte Ltd

Inventors

• Tan Shyue Seng
• Toh Eng Huat

Classifications

• H01L45/1226

  Electricity · mapped topic

• H01L45/144

  Electricity · mapped topic

• H01L45/122

  Electricity · mapped topic

• H01L45/126

  Electricity · mapped topic

• H01L45/1691

  Electricity · mapped topic