Magnetic tunnel junction device

US8969984B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8969984-B2
Application numberUS-201314048704-A
CountryUS
Kind codeB2
Filing dateOct 8, 2013
Priority dateDec 8, 2009
Publication dateMar 3, 2015
Grant dateMar 3, 2015

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Abstract

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A magnetic tunnel junction device includes a Synthetic Anti-Ferromagnetic (SAF) layer, a first free layer, and second free layer. The magnetic tunnel junction device further includes a spacer layer between the first and second free layers. The first free layer is magneto-statically coupled to the second free layer. A thickness of the spacer layer is at least 4 Angstroms.

First claim

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What is claimed is: 1. A magnetic tunnel junction device, comprising: a semiconductor device comprising: a Synthetic Anti-Ferromagnetic (SAF) layer; a first free layer; a second free layer, and a spacer layer between the first free layer and the second free layer, wherein the spacer layer is configured to substantially inhibit exchange coupling between the first free layer and the second free layer, wherein the first free layer is magneto-statically coupled to the second…

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What does patent US8969984B2 cover?
A magnetic tunnel junction device includes a Synthetic Anti-Ferromagnetic (SAF) layer, a first free layer, and second free layer. The magnetic tunnel junction device further includes a spacer layer between the first and second free layers. The first free layer is magneto-statically coupled to the second free layer. A thickness of the spacer layer is at least 4 Angstroms.
Who is the assignee on this patent?
Qualcomm Inc
What technology area does this patent fall under?
Primary CPC classification H01L43/02. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).