Mram device with octagon profile
US-2024135978-A1 · Apr 25, 2024 · US
US8969984B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969984-B2 |
| Application number | US-201314048704-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 8, 2013 |
| Priority date | Dec 8, 2009 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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A magnetic tunnel junction device includes a Synthetic Anti-Ferromagnetic (SAF) layer, a first free layer, and second free layer. The magnetic tunnel junction device further includes a spacer layer between the first and second free layers. The first free layer is magneto-statically coupled to the second free layer. A thickness of the spacer layer is at least 4 Angstroms.
Opening claim text (preview).
What is claimed is: 1. A magnetic tunnel junction device, comprising: a semiconductor device comprising: a Synthetic Anti-Ferromagnetic (SAF) layer; a first free layer; a second free layer, and a spacer layer between the first free layer and the second free layer, wherein the spacer layer is configured to substantially inhibit exchange coupling between the first free layer and the second free layer, wherein the first free layer is magneto-statically coupled to the second…
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