Spin Valve With Bias Alignment
US-2019259520-A1 · Aug 22, 2019 · US
Method and system for providing dual magnetic tunneling junctions using spin-orbit interaction-based switching and memories utilizing the dual magnetic tunneling junctions
US9105830B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105830-B2 |
| Application number | US-201313851591-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 27, 2013 |
| Priority date | Aug 26, 2012 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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A magnetic memory is described. The magnetic memory includes dual magnetic junctions and spin-orbit interaction (SO) active layer(s). Each dual magnetic junction includes first and second reference layers, first and second nonmagnetic spacer layers and a free layer. The free layer is magnetic and between the nonmagnetic spacer layers. The nonmagnetic spacer layers are between the corresponding reference layers and the free layer. The SO active layer(s) are adjacent to the first reference layer of each dual magnetic junction. The SO active layer(s) exert a SO torque on the first reference layer due to a current passing through the SO active layer(s) substantially perpendicular to a direction between the SO active layer(s) and the first reference layer. The first reference layer has a magnetic moment changeable by at least the SO torque. The free layer is switchable using a spin transfer write current driven through the dual magnetic junction.
First claim
Opening claim text (preview).
We claim: 1. A magnetic memory comprising: a plurality of dual magnetic junctions, each of the plurality of dual magnetic junctions including a first reference layer, a first nonmagnetic spacer layer, a free layer, a second nonmagnetic spacer layer and a second reference layer, the free layer being magnetic and residing between the first nonmagnetic spacer layer and the second nonmagnetic spacer layer, the first nonmagnetic spacer layer being between the first reference layer and…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Physics · mapped topic
- H01F10/3263Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9105830B2 cover?
- A magnetic memory is described. The magnetic memory includes dual magnetic junctions and spin-orbit interaction (SO) active layer(s). Each dual magnetic junction includes first and second reference layers, first and second nonmagnetic spacer layers and a free layer. The free layer is magnetic and between the nonmagnetic spacer layers. The nonmagnetic spacer layers are between the corresponding …
- Who is the assignee on this patent?
- Samsung Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01F10/3263. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).