Method and system for providing magnetic junctions having a thermally stable and easy to switch magnetic free layer

Patent metadata

Field	Value
Publication number	US-9029965-B2
Application number	US-201314026386-A
Country	US
Kind code	B2
Filing date	Sep 13, 2013
Priority date	Dec 3, 2012
Publication date	May 12, 2015
Grant date	May 12, 2015

Abstract

A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer includes a plurality of subregions. Each of the subregions has a magnetic thermal stability constant. The subregions are ferromagnetically coupled such that the free layer has a total magnetic thermal stability constant. The magnetic thermal stability constant is such that the each of the subregions is magnetically thermally unstable at an operating temperature. The total magnetic thermal stability constant is such that the free layer is magnetically thermally stable at the operating temperature. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

First claim

We claim:

1. A magnetic junction for use in a magnetic device comprising:
a pinned layer;
a nonmagnetic spacer layer; and
a free layer having a plurality of subregions, each of the plurality of subregions having a magnetic thermal stability constant, the plurality of subregions being ferromagnetically coupled such that the free layer has a total magnetic thermal stability constant; the magnetic thermal stability constant being such that the each of the plurality of subregions is magnetically thermally unstable at an operating temperature, the total magnetic thermal stability constant being such that the free layer is magnetically thermally stable at the operating temperature;
wherein the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

2. The magnetic junction of claim 1 wherein the plurality of subregions includes a plurality of magnetic layers interleaved with at least one nonmagnetic layer.

3. The magnetic junction of claim 2 wherein the plurality of magnetic layers has a first layer an a second layer, the first layer having a first layer magnetization and being closest to the nonmagnetic spacer layer and a second layer having a second layer magnetization and being furthest from the nonmagnetic spacer layer, the first layer magnetization being substantially perpendicular to plane.

4. The magnetic junction of claim 3 wherein the second layer has a second layer magnetization substantially antiparallel to the first layer magnetization, the first layer magnetization having a first magnitude different from a second magnitude of the second layer magnetization.

5. The magnetic junction of claim 3 wherein the free layer has a domain wall therein.

6. The magnetic junction of claim 3 wherein the first layer magnetization is substantially parallel to the second layer magnetization.

7. The magnetic junction of claim 2 wherein the plurality of magnetic layers are substantially identical.

8. The magnetic junction of claim 1 wherein the plurality of subregions correspond to a plurality of grains separated by at least one grain boundary.

9. The magnetic junction of claim 1 wherein the thermal stability constant of each of the plurality of subregions is not more than a quantity, the quantity being eighty multiplied by k b multiplied by the operating temperature.

10. The magnetic junction of claim 9 wherein the quantity is not more than forty multiplied by the k b multiplied by the operating temperature.

11. The magnetic junction of claim 1 wherein the plurality of subregions are configured to switch in an order independent of distance from the nonmagnetic spacer layer.

12. A magnetic memory comprising:
a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic junction, the at least one magnetic junction includes a pinned layer, a nonmagnetic spacer layer and a free layer having a plurality of subregions, each of the plurality of subregions having a magnetic thermal stability constant, the plurality of subregions being ferromagnetically coupled such that the free layer has a total magnetic thermal stability constant; the magnetic thermal stability constant being such that the each of the plurality of subregions is magnetically thermally unstable at an operating temperature, the total magnetic thermal stability constant being such that the free layer is magnetically thermally stable at the operating temperature, the magnetic junction being configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction; and
a plurality of bit lines coupled with the plurality of magnetic storage cells.

13. The magnetic memory of claim 12 wherein the plurality of subregions includes a plurality of magnetic layers interleaved with at least one nonmagnetic layer.

14. The magnetic memory of claim 13 wherein the plurality of magnetic layers has a first layer an a second layer, the first layer having a first layer magnetization and being closest to the nonmagnetic spacer layer and a second layer having a second layer magnetization and being furthest from the nonmagnetic spacer layer, the first layer magnetization being substantially perpendicular to plane.

15. The magnetic memory of claim 14 wherein the second layer has a second layer magnetization substantially antiparallel to the first layer magnetization, the first layer magnetization having a first magnitude different from a second magnitude of the second layer magnetization.

16. The magnetic memory of claim 14 wherein the free layer has a domain wall therein.

17. The magnetic memory of claim 12 wherein the plurality of subregions correspond to a plurality of grains separated by at least one grain boundary.

18. The magnetic memory of claim 12 wherein the each of the plurality of subregions has a thermal stability constant of not more than eighty.

19. The magnetic junction of claim 12 wherein the plurality of subregions are configured to switch in an order independent of distance from the nonmagnetic spacer layer.

20. A method for providing a magnetic junction for use in a magnetic device comprising:
providing a pinned layer;
providing a nonmagnetic spacer layer; and
providing a free layer having a plurality of subregions, each of the plurality of subregions having a magnetic thermal stability constant, the plurality of subregions being ferromagnetically coupled such that the free layer has a total magnetic thermal stability constant; the magnetic thermal stability constant being such that the each of the plurality of subregions is magnetically thermally unstable at an operating temperature, the total magnetic thermal stability constant being such that the free layer is magnetically thermally stable at the operating temperature;
wherein the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Chen Eugene
• Apalkov Dmytro

Classifications

• H01L43/12

  Electricity · mapped topic

• H01L43/08 Primary

  Electricity · mapped topic

• H10N50/10 Primary

  Magnetoresistive devices · CPC title

• H10B61/00

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title