CMOS ultrasonic transducers and related apparatus and methods
US-9533873-B2 · Jan 3, 2017 · US
US12172188B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12172188-B2 |
| Application number | US-202217685991-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 3, 2022 |
| Priority date | Mar 4, 2021 |
| Publication date | Dec 24, 2024 |
| Grant date | Dec 24, 2024 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
An ultrasonic transducer is described. The ultrasonic transducer comprises a membrane and a substrate disposed opposite the membrane such that a cavity is formed therebetween. The substrate comprises an electrode region and pedestals protruding from a surface of the substrate and having a height greater than a height of the electrode region, the pedestals being electrically isolated from the electrode region.
Opening claim text (preview).
What is claimed is: 1. An ultrasound device, comprising: a substrate; a cavity bottom layer disposed on the substrate, the cavity bottom layer comprising: an inner region having a first radius, the inner region comprising a first plurality of pedestals protruding from a surface of the cavity bottom layer, wherein pedestals of the first plurality of pedestals comprise a first pedestal radius; a middle region having a first inner radius and a first outer radius, the first inner radius being approximately equal to the first radius and the first outer radius being greater than the first inner radius, the middle region comprising a second plurality of pedestals protruding from the surface of the cavity bottom layer, wherein pedestals of the second plurality of pedestals comprise a second pedestal radius greater than the first pedestal radius; an outer region surrounding the middle region and having a second inner radius and a second outer radius, the second inner radius being approximately equal to the first outer radius and the second outer radius being greater than the second inner radius; and an electrode layer disposed under the middle region and the outer region; and side walls extending from the cavity bottom layer; and a membrane disposed opposite the substrate and supported by the side walls to form a sealed cavity between the membrane and the substrate, wherein the pedestals of the first plurality of pedestals and the pedestals of the second plurality of pedestals are electrically isolated from the electrode layer. 2. The ultrasound device of claim 1 , wherein the pedestals of the first plurality of pedestals and the pedestals of the second plurality of pedestals comprise a dielectric material having a dielectric constant in range from 3.9 to 50. 3. The ultrasound device of claim 2 , wherein the dielectric material comprises silicon dioxide (SiO2), silicon nitride (SiJN4), or hafnium oxide (HfO2). 4. The ultrasound device of claim 1 , wherein the pedestals of the first plurality of pedestals and the pedestals of the second plurality of pedestals are electrically isolated from the electrode layer by a trench. 5. The ultrasound device of claim 4 , wherein the trench comprises an electrically insulating material having a resistivity in a range from 1×10{circumflex over ( )}15 Q-m to 1×10{circumflex over ( )}25 Q-m. 6. The ultrasound device of claim 1 , wherein pedestals of the first plurality of pedestals have a first pitch and pedestals of the second plurality of pedestals have a second pitch greater than the first pitch. 7. The ultrasound device of claim 1 , wherein the electrode layer comprises a plurality of layers including a titanium nitride (TiN) layer and a titanium (Ti) layer.
Transducers for transforming electrical into mechanical energy or vice versa (dynamo-electric machines H02K99/00; electrostatic machines H02N1/00; piezoelectric devices H10N30/00) · CPC title
with testing, calibrating, safety devices, built-in protection, construction details · CPC title
Structures having a reduced contact area, e.g. with bumps or with a textured surface · CPC title
Electrostatic transducers, e.g. electret-type · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.