CMOS ultrasonic transducers and related apparatus and methods

US9499392B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9499392-B2
Application numberUS-201414172383-A
CountryUS
Kind codeB2
Filing dateFeb 4, 2014
Priority dateFeb 5, 2013
Publication dateNov 22, 2016
Grant dateNov 22, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.

First claim

Opening claim text (preview).

What is claimed is: 1. A method comprising: depositing a first conductive layer on a silicon wafer; depositing a second conductive layer on the first conductive layer; depositing a first layer of SiO 2 on the second conductive layer; etching at least one cavity in the first layer of SiO 2 , a bottom surface of the at least one cavity corresponding to the second conductive layer; depositing a second layer of SiO 2 on the first layer of SiO 2 ; planarizing the second layer of SiO 2 ; bonding a second wafer comprising silicon to the silicon wafer with a fusion bond; thinning a backside of the second wafer distal the at least one cavity to form a membrane over the at least one cavity; and depositing a third conductive layer on the membrane. 2. The method of claim 1 , wherein the first conductive layer comprises aluminum. 3. The method of claim 1 , wherein the second conductive layer comprises TiN. 4. The method of claim 1 , wherein depositing the first layer of SiO 2 is performed via TEOS. 5. The method of claim 1 , wherein the method does not involve any steps performed at higher than 450° C. 6. The method of claim 1 , wherein the silicon wafer has a complementary metal oxide semiconductor (CMOS) circuit formed therein, and wherein the method further comprises electrically connecting the third conductive layer to the CMOS circuit.

Assignees

Inventors

Classifications

  • Other packages not provided for in groups B81B7/0035 - B81B7/0074 · CPC title

  • Cavities · CPC title

  • B81B3/0021Primary

    Transducers for transforming electrical into mechanical energy or vice versa (dynamo-electric machines H02K99/00; electrostatic machines H02N1/00; piezoelectric devices H10N30/00) · CPC title

  • Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit · CPC title

  • Methods or devices for transmitting, conducting or directing sound (G10K11/02, G10K11/36 take precedence) · CPC title

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What does patent US9499392B2 cover?
CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
Who is the assignee on this patent?
Butterfly Network Inc
What technology area does this patent fall under?
Primary CPC classification B81B3/0021. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Nov 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 10 related publications on this page (citations in our corpus or others sharing the same primary CPC).