Atomic layer etching method and semiconductor device manufacturing method using the same

Patent metadata

Field	Value
Publication number	US-11901191-B2
Application number	US-202117535933-A
Country	US
Kind code	B2
Filing date	Nov 26, 2021
Priority date	May 10, 2021
Publication date	Feb 13, 2024
Grant date	Feb 13, 2024

Abstract

An atomic layer etching method capable of precisely etching a metal thin film at units of atomic layer from a substrate including the metal thin film, includes forming a metal layer on a substrate, and etching at least a portion of the metal layer. The etching at least a portion of the metal layer includes at least one etching cycle. The at least one etching cycle includes supplying an active gas onto the metal layer, and supplying an etching support gas after supplying the active gas. The etching support gas is expressed by the following general formula

wherein each of R1, R2, R3, R4 and R5 independently includes hydrogen or a C 1 -C 4 alkyl group, and N is nitrogen.

First claim

What is claimed is:

1. An atomic layer etching method comprising:
forming a metal layer on a substrate; and
etching at least a portion of the metal layer,
wherein the etching at least the portion of the metal layer includes at least one etching cycle,
the at least one etching cycle includes supplying an active gas onto the metal layer, and supplying an etching support gas after the supplying the active gas, and
the etching support gas is pentamethyldiethylenetriamine (PMDETA) expressed by the following formula

wherein H is hydrogen, C is carbon, and N is nitrogen.

2. The atomic layer etching method of claim 1 , wherein the metal layer includes at least one of iridium (Ir), ruthenium (Ru), rhodium (Rh), molybdenum (Mo), copper (Cu), antimony (Sb), aluminum (Al), titanium (Ti), nickel (Ni), tantalum (Ta), zirconium (Zr), hafnium (Hf), tungsten (W), or cobalt (Co).

3. The atomic layer etching method of claim 1 , wherein a temperature of the substrate is in a range from 150° C. to 200° C.

4. The atomic layer etching method of claim 1 , wherein the active gas includes at least one of fluorine (F 2 ), chlorine (Cl 2 ), bromine (Br 2 ), iodine (I 2 ) C 1-7 alkyl halide, or tri C 1-7 alkyl silyl halide.

5. The atomic layer etching method of claim 1 , further comprising performing a pre-treatment process that reduces a surface of the metal layer, before the supplying the active gas, wherein the performing the pre-treatment process includes supplying a reducing gas.

6. The atomic layer etching method of claim 5 , wherein the reducing gas includes at least one of hydrogen (H 2 ), ammonia (NH 3 ), silane (SiH 4 ), borane (BH 3 ), diborane (B 2 H 6 ), phosphine (PH 3 ), or hydrazine (N 2 H 4 ).

7. The atomic layer etching method of claim 5 , further comprising removing residual reducing gas after the performing the pre-treatment process.

8. The atomic layer etching method of claim 1 , further comprising removing residual active gas before the supplying the etching support gas, and
removing residual etching support gas after the supplying the etching support gas.

9. The atomic layer etching method of claim 1 , further comprising forming an insulating layer on the substrate,
wherein the active gas and the etching support gas do not react with the insulating layer.

10. The atomic layer etching method of claim 1 , wherein the supplying the active gas includes activating a surface of the metal layer, and
the supplying the etching support gas includes forming a coordinated complex between an activated surface of the metal layer and the etching support gas.

11. An atomic layer etching method comprising:
forming a metal layer on a substrate; and
etching at least a portion of the metal layer,
wherein the etching at least the portion of the metal layer includes at least one etching cycle,
the at least one etching cycle includes supplying an active gas including a halogen gas onto the metal layer, and supplying an amine based etching support gas after the supplying the active gas, and
the supplying the etching support gas includes supplying the etching support gas at a feeding dosage of 50 Tory sec to 70 Tory sec,
the etching support gas is pentamethyldiethylenetriamine (PMDETA) expressed by the following formula

wherein H is hydrogen, C is carbon, and N is nitrogen.

12. The atomic layer etching method of claim 11 , wherein the metal layer includes at least one of iridium (Ir), ruthenium (Ru), rhodium (Rh), molybdenum (Mo), copper (Cu), antimony (Sb), aluminum (Al), titanium (Ti), nickel (Ni), tantalum (Ta), zirconium (Zr), hafnium (Hf), tungsten (W), or cobalt (Co).

13. The atomic layer etching method of claim 11 , wherein the active gas includes at least one of fluorine (F 2 ), chlorine (Cl 2 ), bromine (Br 2 ), iodine (I 2 ), C 1-7 alkyl halide, or tri C 1-7 alkyl silyl halide.

14. The atomic layer etching method of claim 11 , further comprising performing a pre-treatment process that reduces a surface of the metal layer, before the supplying the active gas,
wherein the performing the pre-treatment process includes supplying a reducing gas.

15. The atomic layer etching method of claim 14 , further comprising removing residual reducing gas before the supplying the active gas,
removing residual active gas after the supplying the etching support gas, and
removing residual etching support gas after the supplying the etching support gas.

16. The atomic layer etching method of claim 14 , wherein the reducing gas includes at least one of hydrogen (H 2 ), ammonia (NH 3 ), silane (SiH 4 ), borane (BH 3 ), diborane (B 2 H 6 ), phosphine (PH 3 ), or hydrazine (N 2 H 4 ).

17. A semiconductor device manufacturing method comprising:
forming an active pattern on a substrate;
forming a source/drain pattern on the active pattern;
forming an interlayer insulating film on the source/drain pattern;
forming a pre-active contact connected with the source/drain pattern, in the interlayer insulating film; and
etching a portion of the pre-active contact,
wherein the etching the portion of the pre-active contact includes at least one etching cycle,
the at least one etching cycle includes supplying an active gas onto the pre-active contact, and supplying an etching support gas after supplying the active gas, and
the etching support gas is expressed by the following general formula

wherein each of R1, R2, R3, R4 and R5 independently includes hydrogen or a C 1 -C 4 alkyl group, and N is nitrogen.

18. The semiconductor device manufacturing method of claim 17 , wherein the supplying the etching support gas includes supplying the etching support gas at a feeding dosage of 50 Torr·sec to 70 Torr·sec.

19. The semiconductor device manufacturing method of claim 17 , wherein the active gas and the etching support gas do not react with the interlayer insulating film.

Assignees

• Samsung Electronics Co Ltd
• Dnf Co Ltd

Inventors

• Ko Eun Hyea
• Jeong Hee Yeon
• Cho Jun Hee
• Park Gyu-Hee
• Park Joong Jin
• Yang Byeong Il
• Cho Youn Joung
• Choi Ji Yu

Classifications

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10P50/283 Primary

  by chemical means · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P50/267 Primary

  using plasmas · CPC title

• H10D30/024

  of fin field-effect transistors [FinFET] · CPC title