Method for forming source/drain contacts
US-2024379814-A1 · Nov 14, 2024 · US
during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10P70/27 |
| Official title | {during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers} |
| Display label | during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers |
| Total patents | 1,376 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 88 |
| 2016 | 120 |
| 2017 | 114 |
| 2018 | 111 |
| 2019 | 117 |
| 2020 | 151 |
| 2021 | 111 |
| 2022 | 154 |
| 2023 | 129 |
| 2024 | 122 |
| 2025 | 126 |
| 2026 | 33 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Cavity shaping and selective metal silicide formation for cmos devices
US-2024203741-A1 · Jun 20, 2024 · US
Cleaning liquid composition
US-11905490-B2 · Feb 20, 2024 · US
Semiconductor device and method for manufacturing the same
US-2015380562-A1 · Dec 31, 2015 · US
Gas cluster reactor for anisotropic film growth
US-2015376791-A1 · Dec 31, 2015 · US
Polysilicon manufacturing method that enhances homogeneity of polysilicon layer
US-2015380245-A1 · Dec 31, 2015 · US
Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US-2015372077-A1 · Dec 24, 2015 · US
Selective titanium nitride removal
US-2015357205-A1 · Dec 10, 2015 · US
Protective via cap for improved interconnect performance
US-2015348902-A1 · Dec 3, 2015 · US
Electrode structure, method of fabricating the same, and semiconductor device including the electrode structure
US-9202813-B2 · Dec 1, 2015 · US
Method of manufacturing semiconductor device, substrate processing apparatus and recording medium
US-2015334849-A1 · Nov 19, 2015 · US
Gas cluster reactor for anisotropic film growth
US-2015332927-A1 · Nov 19, 2015 · US
Chip packaging structures and treatment methods thereof
US-2015325544-A1 · Nov 12, 2015 · US
Dry-etch for selective oxidation removal
US-2015311089-A1 · Oct 29, 2015 · US
Method and apparatus for preparing a substrate with a semi-noble metal layer
US-2015299886-A1 · Oct 22, 2015 · US
Mechanism for forming metal gate structure
US-2015295063-A1 · Oct 15, 2015 · US
Methods of forming charge-trapping regions
US-9159569-B2 · Oct 13, 2015 · US
Semiconductor device and method for manufacturing the same
US-9159806-B2 · Oct 13, 2015 · US
Method of producing semiconductor substrate product, and etching method to be used therein
US-9159572-B2 · Oct 13, 2015 · US
Method of forming thin metal and semi-metal layers by thermal remote oxygen scavenging
US-2015279691-A1 · Oct 1, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10P70/27?
- CPC H10P70/27 is the Cooperative Patent Classification code for “during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers.”
- How many patents are filed under CPC H10P70/27 (during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers)?
- Our database includes 1,376 publications tagged with this CPC code.
- Is patent activity under CPC H10P70/27 growing?
- Publication counts under this code: 122 in 2024 vs 126 in 2025 (latest complete years).