Semiconductor device, method of manufacturing the same, and massive data storage system including the same

Patent metadata

Field	Value
Publication number	US-11856770-B2
Application number	US-202117357213-A
Country	US
Kind code	B2
Filing date	Jun 24, 2021
Priority date	Nov 3, 2020
Publication date	Dec 26, 2023
Grant date	Dec 26, 2023

Abstract

A semiconductor device includes a gate electrode structure, a channel, first division patterns, and a second division pattern. The gate electrode structure is on a substrate, and includes gate electrodes stacked in a first direction perpendicular to the substrate. Each gate electrode extends in a second direction parallel to the substrate. The channel extends in the first direction through the gate electrode structure. The first division patterns are spaced apart from each other in the second direction, and each first division pattern extends in the second direction through the gate electrode structure. The second division pattern is between the first division patterns, and the second division pattern and the first division patterns together divide a first gate electrode in a third direction parallel to the substrate and crossing the second direction. The second division pattern has an outer contour that is a curve in a plan view.

First claim

What is claimed is:

1. A semiconductor device comprising:
a gate electrode structure on a substrate, the gate electrode structure including gate electrodes spaced apart from each other in a first direction perpendicular to an upper surface of the substrate, each of the gate electrodes extending in a second direction parallel to the upper surface of the substrate;
a channel on the substrate and extending through the gate electrode structure in the first direction;
first division patterns apart from each other in the second direction, each of the first division patterns extending in the second direction through the gate electrode structure; and
a second division pattern between the first division patterns, the second division pattern and the first division patterns together dividing a first gate electrode among the gate electrodes in a third direction parallel to the upper surface of the substrate and crossing the second direction,
wherein the second division pattern has a shape in a plan view of a peanut from which opposite ends are removed, and the second division pattern overlaps ones of the gate electrodes above the first gate electrode in the first direction.

2. The semiconductor device of claim 1 , wherein the second division pattern partially overlaps the first division patterns in the third direction.

3. The semiconductor device of claim 1 , wherein the second division pattern extends in the second direction, and the second division pattern has the shape in the plan view of the peanut from which opposite ends in the second direction are removed.

4. The semiconductor device of claim 1 , wherein the second division pattern extends in the third direction, and the second division pattern has the shape in the plan view of the peanut from which opposite ends in the third direction are removed.

5. The semiconductor device of claim 1 , wherein the second division pattern includes:
a horizontal portion at a same level as the first gate electrode, the horizontal portion having an outer contour that has a curve in the plan view; and
a vertical portion connected to the horizontal portion, the vertical portion extending in the first direction from a horizontal direction.

6. The semiconductor device of claim 5 , wherein the vertical portion of the second division pattern has an outer contour that is a circle or an ellipse in the plan view.

7. The semiconductor device of claim 5 , wherein the vertical portion of the second division pattern has a bar shape extending in a direction in a plan view.

8. The semiconductor device of claim 5 , wherein:
the horizontal portion is a first horizontal portion,
the second division pattern further includes a second horizontal portion connected to an upper end of the vertical portion, and
a second gate electrode among the gate electrodes is on the second horizontal portion.

9. The semiconductor device of claim 8 , wherein the first gate electrode corresponds to a ground selection line (GSL), and the second gate electrode corresponds to a word line.

10. The semiconductor device of claim 1 , wherein gate electrodes include a second gate electrode under the first gate electrode, and
the first gate electrode corresponds to a ground selection line (GSL), and the second gate electrode corresponds to a gate induced drain leakage (GIDL) gate electrode.

11. The semiconductor device of claim 1 , further comprising:
an insulation pattern structure extending through the gate electrode structure between the first division patterns; and
an etch stop structure surrounding the insulation pattern structure,
wherein the etch stop structure extends through the second division pattern.

12. The semiconductor device of claim 11 , wherein the etch stop structure includes:
a first extension portion extending in the second direction; and
a second extension portion extending in a third direction parallel to the upper surface of the substrate and crossing the second direction, and
the second extension portion of the etch stop structure extends through the second division pattern.

13. The semiconductor device of claim 11 , further comprising:
a through via extending through the insulation pattern structure.

14. The semiconductor device of claim 1 , further comprising:
a third division pattern on each of opposite sides of the gate electrode structure in a third direction parallel to the upper surface of the substrate and crossing the second direction, the third division pattern extending in the second direction.

15. The semiconductor device of claim 1 , wherein the substrate includes a cell array region and an extension region at least partially surrounding the cell array region, and
the gate electrode structure and the first division patterns are on the cell array region and the extension region of the substrate, the channel is on the cell array region of the substrate, and the second division pattern is on the extension region of the substrate.

16. The semiconductor device of claim 1 , wherein the channel has a cup shape,
wherein the semiconductor device further comprises:
a charge storage structure on an outer sidewall of the channel;
a filling pattern filling an inner space defined by the channel; and
a capping pattern on the channel and the filling pattern, the capping pattern contacting an inner sidewall of the charge storage structure, and
wherein the charge storage structure, the channel, the filling pattern and the capping pattern together correspond to a memory channel structure extending in the first direction.

17. A semiconductor device comprising:
a gate electrode structure on a substrate, the gate electrode structure including gate electrodes spaced apart from each other in a first direction perpendicular to an upper surface of the substrate, each of the gate electrodes extending in a second direction parallel to the upper surface of the substrate;
a channel on the substrate and extending in the first direction through the gate electrode structure;
first division patterns spaced apart from each other in the second direction, each of the first division patterns extending in the second direction through the gate electrode structure; and
a second division pattern between the first division patterns, the second division pattern and the first division patterns together dividing a first gate electrode among the gate electrodes in a third direction parallel to the upper surface of the substrate and crossing the second direction,
wherein the second division pattern includes,
a horizontal portion at a same level as the first gate electrode, the horizontal portion and the first division patterns together dividing the first gate electrode in the third direction, and
a vertical portion connected to the horizontal portion, the vertical portion extending in the first direction from the horizontal portion,
wherein an area of an upper surface of the horixontal portion is greater than an area of an upper surface of the vertical portion, and the second division pattern overlaps the ones of the gate electrodes above the first gate electrode in the dires direction.

18. The semiconductor device of claim 17 , wherein:
the horizontal portion is a first horizontal portion,
the second division pattern further includes a second horizontal portion connected to an upper end of the vertical portion, and
a second gate electrode among the gate electrodes is on the second horizontal portion.

19. A massive data storage system comprising:
(I) a semiconductor device comprising,
(A) a memory cell structure

Assignees

• Samsung Electronics Co Ltd

Inventors

• Jung Kwangyoung
• Baek Jaebok
• Chung Giyong
• Han Jeehoon

Classifications

• H10W90/792

  between multiple chips · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W90/297

  characterised by the through-semiconductor vias [TSVs] in the stacked chips · CPC title

• H10W90/24

  at least one of the stacked chips being laterally offset from a neighbouring stacked chip, e.g. chip stacks having a staircase shape · CPC title