Metal mask base, metal mask and method for producing metal mask

Patent metadata

Field	Value
Publication number	US-11706968-B2
Application number	US-202017100769-A
Country	US
Kind code	B2
Filing date	Nov 20, 2020
Priority date	Jul 17, 2015
Publication date	Jul 18, 2023
Grant date	Jul 18, 2023

Abstract

A metal mask substrate includes a metal obverse surface configured such that a resist is placed on the obverse surface. The obverse surface has a three-dimensional surface roughness Sa of less than or equal to 0.11 μm. The obverse surface also has a three-dimensional surface roughness Sz of less than or equal to 3.17 μm.

First claim

The invention claimed is:

1. A metal mask substrate comprising:
a first surface which is made of metal, wherein
the first surface has a three-dimensional surface roughness Sa of less than or equal to 0.11 μm, and
the first surface has a three-dimensional surface roughness Sz of less than or equal to 3.17 μm; and
a second surface, which is opposite to the first surface and made of metal, wherein
the second surface has a three-dimensional surface roughness Sa of less than or equal to 0.11 μm, and
the second surface has a three-dimensional surface roughness Sz of less than or equal to 3.17 μm.

2. The metal mask substrate according to claim 1 , wherein the first surface is made of Invar.

3. The metal mask substrate according to claim 1 , further comprising:
a metal layer, the metal layer being made of Invar and having a first surface and a second surface that is opposite to the first surface, and a polyimide layer that faces the second surface of the metal layer, wherein
the first surface of the metal mask substrate is the first surface of the metal layer.

4. The metal mask substrate according to claim 1 , wherein
the first surface is configured such that a dry film resist is affixed to the first surface.

5. The metal mask substrate according to claim 1 , wherein
the metal mask substrate is a rolled material made of an alloy that is mainly composed of iron and nickel.

6. The metal mask substrate according to claim 1 , wherein
the metal layer has a thickness of between 10 μm and 50 μm inclusive.

7. The metal mask substrate according to claim 1 , further comprising:
a first resist which is placed on the first surface, and
a second resist which is placed on the second surface.

8. The metal mask substrate according to claim 7 , wherein
each of the first resist and the second resist is a dry film resist.

9. The metal mask substrate according to claim 7 , wherein
the first surface is configured to be etched with the first resist that is patterned by exposure and development,
the second surface is configured to be etched with the second resist that is patterned by exposure and development.

10. The metal mask substrate according to claim 8 , wherein
the dry film resist has a thickness of between 5 μm and 20 μm inclusive.

11. The metal mask substrate according to claim 8 , wherein
the dry film resist is made of an acrylic plastic that is cross-linked by photopolymerization.

12. The metal mask substrate according to claim 1 , wherein
the metal mask substrate is configured so that a plurality of through-holes is formed.

13. The metal mask substrate according to claim 12 , wherein
each of the through-holes penetrates the metal mask substrate and has an opening located on the first surface, and
(B/A)×100(%) is less than or equal to 10%, where A represents an average of dimensions of the openings in a plan view of the first surface, and B represents a value obtained by multiplying a standard deviation of the dimensions by 3.

14. The metal mask substrate according to claim 1 ,
further comprising:
through-holes penetrating through the metal mask substrate, each of the through-holes having an opening on the first surface and an opposite opening on the second surface,
wherein for the openings of the first surface, (B/A)×100(%) is less than or equal to 10%, where A represents an average of dimensions of the openings in a plan view of the first surface, and B represents a value obtained by multiplying a standard deviation of the dimensions by 3.

15. The metal mask substrate according to claim 1 ,
further comprising:
through-holes penetrating through the metal mask substrate, each of the through-holes having an opening on the first surface and an opposite opening on the second surface,
wherein for the openings of the first surface, (B/A)×100(%) is less than or equal to 10%, where A represents an average of dimensions of the openings in a plan view of the first surface, and B represents a value obtained by multiplying a standard deviation of the dimensions by 3 , and
wherein for the openings of the second surface, (D/C)×100(%) is less than or equal to 10%, where C represents an average of dimensions of the openings in a plan view of the second surface, and D represents a value obtained by multiplying a standard deviation of the dimensions by 3.

Assignees

• Toppan Printing Co Ltd

Inventors

• Fujito Daisei
• Nishitsuji Kiyoaki
• Nishi Takehiro

Classifications

• H10K71/166 Primary

  using selective deposition, e.g. using a mask · CPC title

• C23C14/042 Primary

  using masks · CPC title

• B05C21/005

  Masking devices (stencils B05C17/06; masking devices for which the means for applying liquids or other fluent material is spraying or is not important B05B12/20) · CPC title

• C23F1/02

  Local etching · CPC title

• C23F1/16

  Acidic compositions (C23F1/42 takes precedence) · CPC title