Method for producing vapor deposition mask, and method for producing organic semiconductor element
US-2017186955-A1 · Jun 29, 2017 · US
US10273569B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10273569-B2 |
| Application number | US-201715786463-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 17, 2017 |
| Priority date | Jul 17, 2015 |
| Publication date | Apr 30, 2019 |
| Grant date | Apr 30, 2019 |
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A metal mask substrate includes a metal surface to which a resist is to be disposed. A specular reflectance of incident light to the surface is 45.2% or more.
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The invention claimed is: 1. A metal mask substrate comprising a metal surface to which a resist is to be disposed, wherein a specular reflectance of incident light to the surface is 45.2% or more, the metal mask substrate has a width direction orthogonal to a rolling direction of the metal mask substrate, a specular reflectance in a first plane orthogonal to the surface and orthogonal to the rolling direction is a first reflectance, a specular reflectance in a second plane orthogonal to the surface and orthogonal to the width direction is a second reflectance, the second reflectance is larger than the first reflectance, and the first reflectance is 45.2% or more. 2. The metal mask substrate according to claim 1 , wherein the surface includes a portion in which a difference obtained by subtracting the first reflectance from the second reflectance is 10.2% or more. 3. The metal mask substrate according to claim 1 , wherein the surface has a three-dimensional surface roughness Sa of 0.11 μm or less and a three-dimensional surface roughness Sz of 3.17 μm or less. 4. The metal mask substrate according to claim 1 , wherein the surface is a first surface, the resist is a first resist, the metal mask substrate further comprising a metal second surface to which a resist is to be disposed, the second surface being a surface opposite to the first surface, and a specular reflectance of incident light to the second surface is 45.2% or more. 5. The metal mask substrate according to claim 1 , wherein the surface is made of invar. 6. The metal mask substrate according to claim 1 , wherein the resist is a dry film resist, and the dry film resist is adhered to the surface.
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Physical treatment to alter the texture of the substrate surface, e.g. grinding, polishing · CPC title
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Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title
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