Vapor deposition mask, frame-equipped vapor deposition mask, and method for producing organic semiconductor element

Patent metadata

Field	Value
Publication number	US-2016293844-A1
Application number	US-201615150678-A
Country	US
Kind code	A1
Filing date	May 10, 2016
Priority date	Nov 14, 2013
Publication date	Oct 6, 2016
Grant date	—

Abstract

A vapor deposition mask includes a metal mask and a resin mask having an opening. An inner wall surface for composing the opening has an inflection point in a thicknesswise cross section of the resin mask. When an intersection of a first surface, not facing the metal mask, of the resin mask and the inner wall surface is set to be a first intersection, an intersection of a second surface, facing the metal mask, of the resin mask and the inner wall surface is set to be a second intersection, and there is set a first inflection point first positioned from the first intersection toward the second intersection, an angle formed by a line connecting the first intersection and the first inflection point and the first surface is larger than an angle formed by a line connecting the first inflection point and the second intersection and the second surface.

First claim

1 . A vapor deposition mask comprising:
a metal mask having a slit; and a resin mask having an opening corresponding to a pattern to be produced by vapor deposition, the metal mask being stacked on one surface of the resin mask, wherein an inner wall surface for composing the opening of the resin mask has at least one inflection point in a thicknesswise cross section, and wherein when in the thicknesswise cross section, an intersection of a first surface which is a surface of the resin mask on a side of not facing the metal mask and the inner wall surface is set to be a first intersection, an intersection of a second surface which is a surface of the resin mask on a side of facing the metal mask and the inner wall surface is set to be a second intersection, and an inflection point, of the inflection points, that is first positioned from the first intersection toward the second intersection is set to be a first inflection point, an angle (θ 1 ) formed by a straight line connecting the first intersection and the first inflection point and the first surface is larger than an angle (θ 2 ) formed by a straight line connecting the first inflection point and the second intersection and the second surface, and the inner wall surface has a shape having broadening from the first surface toward the second surface side in the thicknesswise cross section.

2 . The vapor deposition mask according to claim 1 , wherein
the angle (θ 1 ) formed by the straight line connecting the first inflection point and the first intersection and the first surface is within a range of about 60° to 90°, and the angle (θ 2 ) formed by the straight line connecting the first inflection point and the second intersection and the second surface is within a range of about 30° to 70°.

3 . The vapor deposition mask according to claim 1 , wherein
a plurality of slits are provided in the metal mask, openings for composing a plurality of screens are provided in the resin mask, and each of the slits is provided at a position of overlapping with an entirety of at least one screen.

4 . The vapor deposition mask according to claim 1 , wherein
one slit is provided in the metal mask, a plurality of openings are provided in the resin mask, and all of the plurality of openings are provided at a position of overlapping with the one slit.

5 . The vapor deposition mask according to claim 1 , wherein
a thickness of the resin mask is about 3 μm or more and less than about 10 μm.

6 . A frame-equipped vapor deposition mask comprising:
a frame; the vapor deposition mask according to claim 1 , the vapor deposition mask being fixed to the frame.

7 . A method for producing an organic semiconductor element comprising a step of forming a vapor deposition pattern on a vapor deposition target with use of a frame-equipped vapor deposition mask including a vapor deposition mask which is fixed to a frame, wherein
in the step of forming the vapor deposition pattern, the vapor deposition mask fixed to the frame includes: a metal mask in which a slit is provided; and a resin mask in which an opening corresponding to a pattern to be produced by vapor deposition is provided, the metal mask being stacked on one surface of the resin mask, an inner wall surface for composing the opening of the resin mask has at least one inflection point in a thicknesswise cross section, and wherein when in the thicknesswise cross section, an intersection of a first surface which is a surface of the resin mask on a side of not being in contact with the metal mask and the inner wall surface is set to be a first intersection, an intersection of a second surface which is a surface of the resin mask on a side of being in contact with the metal mask and the inner wall surface is set to be a second intersection, and an inflection point, of the inflection points, that is first positioned from the first intersection toward the second intersection is set to be a first inflection point, an angle (θ 1 ) formed by a straight line connecting the first intersection and the first inflection point and the first surface is larger than an angle (θ 2 ) formed by a straight line connecting the first inflection point and the second intersection and the second surface, and the inner wall surface has a shape having broadening from the first surface toward the second surface side in the thicknesswise cross section.

8 . The vapor deposition mask according to claim 2 , wherein
a plurality of slits are provided in the metal mask, openings for composing a plurality of screens are provided in the resin mask, and each of the slits is provided at a position of overlapping with an entirety of at least one screen.

9 . The vapor deposition mask according to claim 2 , wherein
one slit is provided in the metal mask, a plurality of openings are provided in the resin mask, and all of the plurality of openings are provided at a position of overlapping with the one slit.

Assignees

• Dainippon Printing Co Ltd

Inventors

• Takeda Toshihiko
• Obata Katsunari
• Kawasaki Hiroshi

Classifications

• C23C14/24

  Vacuum evaporation · CPC title

• C23C16/042

  using masks · CPC title

• H10K71/00

  Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title

• H10K71/166 Primary

  using selective deposition, e.g. using a mask · CPC title

• C23C14/042 Primary

  using masks · CPC title