Method for producing vapor deposition mask, and method for producing organic semiconductor element

US2016268511A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016268511-A1
Application numberUS-201615158951-A
CountryUS
Kind codeA1
Filing dateMay 19, 2016
Priority dateJan 12, 2012
Publication dateSep 15, 2016
Grant date

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  5. First independent claim

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Abstract

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A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size is increased, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A vapor deposition mask is produced by the steps of preparing a metal plate with a resin layer in which a resin layer is provided on one surface of a metal plate, forming a metal mask with a resin layer by forming a slit that penetrates through only the metal plate, for the metal plate in the metal plate with a resin layer, and thereafter, forming a resin mask by forming openings corresponding to a pattern to be produced by vapor deposition in a plurality of rows lengthwise and crosswise in the resin layer by emitting a laser from the metal mask side.

First claim

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1 . A method for producing a vapor deposition mask that is formed by a metal mask provided with a slit, and a resin mask that is positioned on a front surface of the metal mask, and has openings corresponding to a pattern to be produced by vapor deposition being stacked on each other, comprising the steps of: preparing a metal plate with a resin layer in which a resin layer is provided on one surface of the metal plate; forming a metal mask with a resin layer by forming a slit that penetrates through only the metal plate, for the metal plate in the metal plate with a resin layer; and forming a resin mask by forming the openings corresponding to a pattern to be produced by vapor deposition in the resin layer by emitting a laser from the metal mask side. 2 . The method for producing a vapor deposition mask according to claim 1 , wherein the step of forming the metal mask with a resin layer comprises forming a resist pattern by coating a surface where a resin layer is not provided, of the metal plate with the resin layer, with a resist material, masking the resist material with use of a mask in which a slit pattern is formed, forming a resist pattern by performing exposure and development, subjecting the metal plate to etching processing using the resist pattern as an etching resistant mask, and cleaning and removing the resist pattern after etching is finished. 3 . The method for producing a vapor deposition mask according to claim 1 , wherein the step of forming the metal mask with a resin layer comprises forming a resist pattern by coating a surface where a resin layer is not provided, of the metal plate with a resin layer, with a resist material, masking the resist material with use of a mask in which a slit pattern is formed, forming a resist pattern by performing exposure and development, subjecting the metal plate to etching processing using the resist pattern as an etching resistant mask, and allowing the resist pattern to remain on a front surface of the metal plate even after etching is finished. 4 . The method for producing a vapor deposition mask according to claim 1 , further comprising the step of: fixing the metal mask with a resin layer onto a frame containing a metal, after the metal mask with a resin layer is obtained in the step of forming the metal mask with a resin layer, wherein after the metal mask with a resin layer is fixed to the frame, the step of forming the resin mask is performed. 5 . The method for producing a vapor deposition mask according to claim 2 , further comprising the step of: fixing the metal mask with a resin layer onto a frame containing a metal, after the metal mask with a resin layer is obtained in the step of forming the metal mask with a resin layer, wherein after the metal mask with a resin layer is fixed to the frame, the step of forming the resin mask is performed. 6 . The method for producing a vapor deposition mask according to claim 3 , further comprising the step of: fixing the metal mask with a resin layer onto a frame containing a metal, after the metal mask with a resin layer is obtained in the step of forming the metal mask with a resin layer, wherein after the metal mask with a resin layer is fixed to the frame, the step of forming the resin mask is performed. 7 . A method for producing an organic semiconductor element comprising: using the vapor deposition mask that is produced according to the production method according to claim 1 to produce the organic semiconductor element. 8 . A method for producing an organic semiconductor element comprising: using the vapor deposition mask that is produced according to the production method according to claim 2 to produce the organic semiconductor element. 9 . A method for producing an organic semiconductor element comprising: using the vapor deposition mask that is produced according to the production method according to claim 3 to produce the organic semiconductor element. 10 . A method for producing an organic semiconductor element comprising: using the vapor deposition mask that is produced according to the production method according to claim 4 to produce the organic semiconductor element. 11 . A method for producing an organic semiconductor element comprising: using the vapor deposition mask that is produced according to the production method according to claim 5 to produce the organic semiconductor element. 12 . A method for producing an organic semiconductor element comprising: using the vapor deposition mask that is produced according to the production method according to claim 6 to produce the organic semiconductor element.

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What does patent US2016268511A1 cover?
A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size is increased, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A vapor deposition mask is produced by the steps of preparing a metal plate with a resin laye…
Who is the assignee on this patent?
Dainippon Printing Co Ltd
What technology area does this patent fall under?
Primary CPC classification C23C14/24. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu Sep 15 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).