Particle removing assembly and method of cleaning mask for lithography

Patent metadata

Field	Value
Publication number	US-11698592-B2
Application number	US-202217713012-A
Country	US
Kind code	B2
Filing date	Apr 4, 2022
Priority date	Dec 30, 2019
Publication date	Jul 11, 2023
Grant date	Jul 11, 2023

Abstract

An photolithographic apparatus includes a particle removing cassette selectively extendable from the processing apparatus. The particle removing cassette includes a wind blade slit and an exhausting slit. The wind blade slit is configured to direct pressurized cleaning material to a surface of the mask to remove the debris particles from the surface of the mask. The exhausting slit collects the debris particles separated from the surface of the mask and contaminants through the exhaust line. In some embodiments, the wind blade slit includes an array of wind blade nozzles spaced apart within the wind blade slit. In some embodiments, the exhausting slit includes array of exhaust lines spaced apart within the exhausting slit.

First claim

What is claimed is:

1. A cleaning method of a mask for a photolithographic apparatus, wherein the photolithographic apparatus comprises:
a particle removing cassette having a first slit and an elongated wind blade nozzle extending along a length of the first slit and protruding from the first slit; and
the method comprising:
ejecting pressurized cleaning material through the elongated wind blade nozzle of the first slit toward debris particles on a patterning surface of the mask to remove the debris particles from the patterning surface of the mask;
monitoring an amount of the debris particles on the patterning surface of the mask; and
adjusting a flow rate and a pressure of the pressurized cleaning material by a pump and a compressor based on the amount of the debris particles on the patterning surface of the mask.

2. The cleaning method of claim 1 , further comprising:
positioning the elongated wind blade nozzle with respect to the debris particles by an extendable positioner.

3. The cleaning method of claim 1 , further comprising:
regulating operating parameters of the pump and the compressor based on the amount of the debris particles on the patterning surface of the mask.

4. The cleaning method of claim 1 , further comprising:
three-dimensionally rotating the pressurized cleaning material ejected from the elongated wind blade nozzle of the first slit using a directional positioner inserted into the first slit; and
directing, by the rotating, the pressurized cleaning material to one or more debris particles on the patterning surface of the mask.

5. The cleaning method of claim 4 , wherein the particle removing cassette further comprises an elongated exhaust line extending along a length of a second slit, the method further comprising:
collecting the debris particles removed from the patterning surface of the mask by the elongated exhaust line of the second slit.

6. The cleaning method of claim 1 , further comprising:
positioning the patterning surface of the mask facing down along a direction of gravity.

7. A photolithographic apparatus, comprising:
a particle removing cassette, wherein the particle removing cassette comprises:
a first slit;
an array of two or more parallel wind blade nozzles arranged along a length of the first slit; and
a supporting member coupled to the particle removing cassette and configured to eject pressurized cleaning material from the supporting member through the array of two or more parallel wind blade nozzles and direct the pressurized cleaning material to a patterning surface of a mask, wherein the patterning surface of the mask is positioned facing down along a direction of gravity.

8. The photolithographic apparatus of claim 7 , further comprising:
a mask holder, wherein the mask is mounted in the mask holder with the patterning surface of the mask facing down along the direction of gravity; and
a monitoring device for determining an amount and a size of debris particles on the patterning surface of the mask.

9. The photolithographic apparatus of the claim 8 , further comprising a controller, wherein the supporting member further comprises a pump, the controller is configured to:
monitor the determined amount and the size of the debris particles on the patterning surface of the mask,
adjust a flow rate and a pressure of the pressurized cleaning material by the pump based on the amount and the size of the debris particles on the patterning surface of the mask, and
regulate ejecting parameters of the pump when the pressurized cleaning material is ejected from the array of two or more parallel wind blade nozzles.

10. The photolithographic apparatus of claim 8 , wherein a distance between the particle removing cassette and the patterning surface of the mask is in a range from 0.8 mm to 1.2 mm.

11. The photolithographic apparatus of claim 8 , further comprising:
a pulsation insert mounted in the first slit and configured to oscillate a pressure of the ejected pressurized cleaning material; and
a directional positioner mounted in the first slit and configured to provide a three-dimensional rotation of the ejected pressurized cleaning material.

12. The photolithographic apparatus of claim 8 , wherein the array of two or more parallel wind blade nozzles protrudes out of the particle removing cassette toward the patterning surface of the mask.

13. The photolithographic apparatus of claim 11 , wherein the directional positioner is configured to move the array of two or more parallel wind blade nozzles to direct the ejected pressurized cleaning material toward the debris particles and contaminations on the patterning surface of the mask.

14. The photolithographic apparatus of claim 7 , wherein the array of two or more parallel wind blade nozzles comprises between 5 to 7 nozzles.

15. The photolithographic apparatus of claim 8 , further comprising:
an extendable positioner coupled to the particle removing cassette and configured to move the array of two or more parallel wind blade nozzles with respect to the debris particles on the patterning surface of the mask.

16. A cleaning method of a mask in a chamber of a photolithographic apparatus having a particle removing cassette that comprises first and second slits, the method comprising:
ejecting a pressurized cleaning material through the first slit toward debris particles and contaminations on a patterning surface of the mask to remove the debris particles and the contaminations, wherein the patterning surface of the mask is positioned facing down along a direction of gravity; and
collecting the debris particles and the contaminants removed from the patterning surface of the mask by an elongated exhaust line extending along a length of the second slit and protruding from the second slit.

17. The cleaning method of claim 16 , further comprising:
regulating the cleaning using a controller to:
monitor an amount of the debris particles on the patterning surface of the mask, and
adjust a flow rate of the ejected pressurized cleaning material based on the monitored amount of the debris particles on the patterning surface of the mask.

18. The cleaning method of claim 17 , further comprising:
stopping the ejecting the pressurized cleaning material when the amount of the debris particles on the patterning surface of the mask is below a threshold amount.

19. The cleaning method of claim 16 , wherein an elongated wind blade nozzle arranged along a length of the first slit, the method further comprising:
oscillating a pressure of the pressurized cleaning material ejected from the elongated wind blade nozzle of the first slit.

20. The cleaning method of claim 19 , further comprising:
generating a pulsation of the pressurized cleaning material ejected from the elongated wind blade nozzle of the first slit using a pulsation insert that is inserted in the first slit.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lin Chen-Yang
• Yu da-wei
• Wang Li-Hsin
• Lin Kuan-Wen
• Chen Chia-Jen
• Lee Hsin-Chang

Classifications

• G03F7/70925 Primary

  Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning · CPC title

• G03F1/22

  Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof · CPC title

• G03F1/82

  Auxiliary processes, e.g. cleaning or inspecting · CPC title