Method of making an extreme ultraviolet pellicle

Patent metadata

Field	Value
Publication number	US-9256123-B2
Application number	US-201414259194-A
Country	US
Kind code	B2
Filing date	Apr 23, 2014
Priority date	Apr 23, 2014
Publication date	Feb 9, 2016
Grant date	Feb 9, 2016

Abstract

The present disclosure relates to a method of forming an EUV pellicle having an pellicle film connected to a pellicle frame without a supportive mesh, and an associated apparatus. In some embodiments, the method is performed by forming a cleaving plane within a substrate at a position parallel to a top surface of the substrate. A pellicle frame is attached to the top surface of the substrate. The substrate is cleaved along the cleaving plane to form a pellicle film comprising a thinned substrate coupled to the pellicle frame. Prior to cleaving the substrate, the substrate is operated upon to reduce structural damage to the top surface of substrate during formation of the cleaving plane and/or during cleaving the substrate. Reducing structural damage to the top surface of the substrate improves the durability of the thinned substrate and removes a need for a support structure for the pellicle film.

First claim

What is claimed is:

1. A method for forming a pellicle, comprising:
forming a cleaving plane within a substrate at a position parallel to a top surface of the substrate;
attaching a pellicle frame to the top surface of the substrate;
cleaving the substrate along the cleaving plane to form a pellicle film comprising a thinned substrate having the top surface of the substrate; and
operating upon the substrate, prior to cleaving the substrate, to reduce structural damage to the top surface of the substrate during formation of the cleaving plane or during cleaving the substrate.

2. The method of claim 1 , wherein operating upon the substrate to reduce structural damage to the top surface of the substrate comprises:
performing a first implantation process to implant a collection species into the top surface of the substrate; and
performing a second implantation process to implant a severing species into the top surface of the substrate, wherein the collection species causes the severing species to achieve a peak concentration along the cleaving plane.

3. The method of claim 2 ,
wherein the first implantation process is configured to implant boron into the substrate at a first energy having a range of between approximately 70 KeV and approximately 100 KeV; and
wherein the second implantation process is configured to implant hydrogen implanted into the substrate at a second energy of between approximately 40 KeV and approximately 60 KeV.

4. The method of claim 2 , further comprising:
forming an encapsulating layer on the top surface of the substrate prior to performing the first implantation process and the second implantation process; and
removing the encapsulating layer after performing the first implantation process and the second implantation process.

5. The method of claim 4 , wherein the encapsulating layer comprises silicon oxide.

6. The method of claim 4 , wherein the encapsulating layer comprises silicon carbide or a layer of silicon oxide and an overlying layer of amorphous silicon.

7. The method of claim 1 , wherein operating upon the substrate to reduce structural damage to the top surface of the substrate comprises:
attaching the pellicle frame to the top surface of the substrate using a temporary adhesive material and a perdurable adhesive material different than the temporary adhesive material.

8. The method of claim 7 , wherein the temporary adhesive material comprises polymethyl methacrylate (PMMA).

9. The method of claim 1 , wherein operating upon the substrate to reduce structural damage to the top surface of the substrate comprises:
attaching the pellicle frame to the top surface of the substrate within a processing chamber that is held at a pressure greater than 2 atmosphere.

10. The method of claim 1 , further comprising:
performing a first anneal process on the substrate to raise a temperature of the substrate to a first temperature prior to cleaving the substrate; and
performing a second anneal process on the substrate to raise the temperature of the substrate to a second temperature greater than the first temperature after cleaving the substrate.

11. The method of claim 10 , wherein the first temperature is approximately 180° C. and the second temperature is approximately 250° C.

12. The method of claim 1 , wherein the substrate comprises a layer of graphene, silicon carbide, or single walled carbon nanotubes disposed onto a base substrate.

13. The method of claim 1 , further comprising:
mounting the thinned substrate to an extreme ultraviolet (EUV) reticle by way of the pellicle frame.

14. An extreme ultraviolet (EUV) pellicle, comprising:
a thinned substrate;
an adhesive material disposed onto outer edges of a top surface of the thinned substrate; and
a pellicle frame connected to the thinned substrate by way of the adhesive material and configured to mount the thinned substrate to an extreme ultraviolet (EUV) reticle,
wherein the thinned substrate comprises hydrogen and boron dopants disposed along a bottom surface of the thinned substrate that spatially opposing the pellicle frame.

15. The EUV pellicle of claim 14 , wherein the substrate comprises crystalline silicon.

16. The EUV pellicle of claim 14 , wherein the substrate comprises graphene.

17. The EUV pellicle of claim 14 , wherein the substrate comprises single walled carbon nanotubes.

18. A method for forming a pellicle, comprising:
performing a first implantation process to implant a collection species into an upper surface of a substrate;
performing a second implantation process to implant a severing species into the upper surface of the substrate, wherein the collection species causes the severing species to achieve a peak doping concentration along a cleaving plane that is parallel to a top surface of the substrate;
attaching a pellicle frame to the upper surface of the substrate using a temporary adhesive material and a perdurable adhesive material different than the temporary adhesive material after performing the second implantation process; and
cleaving the substrate along the cleaving plane to form to form thinned substrate attached to the pellicle frame.

19. The method of claim 18 , wherein the collection species comprises boron and the severing species comprises hydrogen.

20. The method of claim 18 , further comprising:
forming an encapsulating layer on the upper surface of the substrate prior to performing the first implantation process and the second implantation process; and
removing the encapsulating layer after performing the first implantation process and the second implantation process.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Shih Chih-Tsung
• Lee Tien-Hsi
• Chen Chia-Jen
• Chien Shang-Chieh
• Yu Shinn-Sheng
• Chen Jeng-Horng
• Yen Anthony

Classifications

• G03F1/62

  Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof · CPC title

• G03F7/2002

  with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image · CPC title

• B29C71/02

  Thermal after-treatment {(B29C71/0063 and B29C71/0072 take precedence)} · CPC title

• B29C2071/022

  Annealing · CPC title

• G03F1/64 Primary

  characterised by the frames, e.g. structure or material, including bonding means therefor · CPC title