Collector in an extreme ultraviolet lithography system with optimal air curtain protection

Patent metadata

Field	Value
Publication number	US-9869934-B2
Application number	US-201615194118-A
Country	US
Kind code	B2
Filing date	Jun 27, 2016
Priority date	Mar 13, 2014
Publication date	Jan 16, 2018
Grant date	Jan 16, 2018

Abstract

The present disclosure provides an extreme ultraviolet (EUV) lithography system. The EUV lithography system includes a collector having a coating surface designed to collect and reflect EUV radiation; a gas supply module; and a gas pipeline integrated with the collector and connected to the gas supply module. The gas pipeline includes inward and outward entrances into the collector. The inward and outward entrances are configured and operable to form a gas curtain on the coating surface of the collector.

First claim

What is claimed is:

1. An extreme ultraviolet (EUV) lithography system, comprising:
a collector having a coating surface designed to collect and reflect EUV radiation;
a gas supply module; and
a gas pipeline integrated with the collector and connected to the gas supply module, wherein the gas pipeline includes inward and outward entrances into the collector, wherein the inward and outward entrances are configured to completely surround a center of the collector and operable to form a gas flow pattern inside the collector by a combination of gas flows from the inward and outward entrances, wherein the inward entrance has a first opening facing a first direction that is configured to expel gas into the collector and the outward entrance has a second opening facing a second direction that is configured to expel gas into the collector, the second direction being opposite from the first direction.

2. The EUV lithography system of claim 1 , further comprising:
a solid cover integrated with the collector and configured to have a gap between the solid cover and an outer edge of the collector.

3. The EUV lithography system of claim 2 , wherein the gap is connected to the gas supply module and configured to supply a gas to the collector.

4. The EUV lithography system of claim 2 , wherein the gas supply module supplies hydrogen gas to the gas pipeline and the gap.

5. The EUV lithography system of claim 1 , further comprising a ring frame integrated with the collector, wherein the gas pipeline is embedded in the ring frame.

6. The EUV lithography system of claim 5 , wherein the ring frame is made of stainless steel.

7. The EUV lithography system of claim 5 , further comprising a laser-produced plasma (LPP) mechanism that includes:
a target droplet generator designed to generate target droplets; and
a laser that is configured to heat the target droplets, thereby producing the EUV radiation.

8. The EUV lithography system of claim 7 , further comprising a window that is transparent to the laser and configured in the ring frame.

9. The EUV lithography system of claim 8 , wherein the inward entrance is configured and operable to form a gas purge cone near the window.

10. The EUV lithography system of claim 1 , further comprising a window transparent to a laser, and
wherein the first opening of the inner entrance is configured to expel gas towards the window and the second opening of the outward entrance is configured to expel gas away from the window.

11. An extreme ultraviolet (EUV) lithography system, comprising:
a collector, a first surface of the collector being designed to collect and reflect EUV radiation;
a gas supply module;
a gas pipeline integrated with the collector and connected to the gas supply module, wherein the gas pipeline includes inward and outward openings surrounding all sides of a center of the collector, wherein the gas supply module and the inward and outward openings of the gas pipeline are configured and operable to form a continuous gas stream above the first surface;
a ring frame integrated with the collector, wherein the gas pipeline is embedded in the ring frame; and
a window that is transparent to a laser and configured in the ring frame.

12. The EUV lithography system of claim 11 , further comprising:
a solid cover integrated with the collector and configured to have a gap between the solid cover and an outer edge of the collector, wherein the gap is connected to the gas supply module and configured to supply a gas to the collector.

13. The EUV lithography system of claim 12 , wherein the gap has a first dimension ranging from 5 mm to 15 mm, and each of the inward and outward openings has a second dimension ranging from 3 mm to 7 mm.

14. The EUV lithography system of claim 12 , wherein the solid cover and ring frame are made of stainless steel.

15. The EUV lithography system of claim 11 , further comprising:
a laser-produced plasma (LPP) mechanism that includes:
a target droplet generator designed to generate target droplets; and
the laser that is operable to heat the target droplets thereby producing the EUV radiation collected and reflected by the collector;

a mask stage configured to secure an EUV mask;
a wafer stage configured to secure a semiconductor wafer; and
an optical module designed to direct the EUV radiation from the collector to image an IC pattern defined on the EUV mask to the semiconductor wafer.

16. An extreme ultraviolet (EUV) lithography system, comprising:
a target droplet generator designed to generate target droplets;
a laser that is operable to heat the target droplets thereby producing EUV radiation;
a collector, a first surface of the collector being designed to collect and reflect the EUV radiation;
a solid cover integrated with the collector and configured to have a gap between the solid cover and an edge of the collector;
a gas pipeline having inward and outward entrances into and surrounding a center of the collector;
a gas supply module connected to the gas pipeline and the gap, wherein the inward and outward entrances of the gas pipeline and the gap are configured and operable to form a continuous gas stream inside the collector by a combination of gas flows from at least the inward and outward entrances;
a ring frame integrated with the collector, wherein the gas pipeline is embedded in the ring frame; and
a window through which the laser reaches into the collector and is configured in the ring frame.

17. The EUV lithography system of claim 16 , wherein the ring frame is configured in the center of the collector.

18. The EUV lithography system of claim 17 , wherein the inward entrance is configured and operable to form a gas purge cone near the window.

19. The EUV lithography system of claim 17 , wherein the ring frame is made of stainless steel.

20. The EUV lithography system of claim 16 , wherein the inward entrance and the outward entrance have the same opening dimension.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Huang Chia-Ching
• Chen Tsung-Yu
• Hsu Chia-Hao
• Yu Shinn-Sheng
• Chen Chia-Chen

Classifications

• H05G2/002

  Supply of the plasma generating material · CPC title

• H05G2/009

  Auxiliary arrangements not involved in the plasma generation · CPC title

• H05G2/005

  Electricity · mapped topic

• H05G2/008

  involving an energy-carrying beam in the process of plasma generation · CPC title

• G03F7/70033 Primary

  by plasma extreme ultraviolet [EUV] sources · CPC title