Semiconductor storage device

Patent metadata

Field	Value
Publication number	US-11547018-B2
Application number	US-202016783227-A
Country	US
Kind code	B2
Filing date	Feb 6, 2020
Priority date	Jul 9, 2019
Publication date	Jan 3, 2023
Grant date	Jan 3, 2023

Abstract

According to one embodiment, a semiconductor storage device includes a housing, a first board, a heat generating component, an electronic component, and a thermal-conductive sheet. The housing has a first vent hole. The first board is accommodated in the housing. The heat generating component is mounted on the first board. The electronic component is disposed between the heat generating component and the first vent hole. The thermal-conductive sheet is provided to extend over the heat generating component and the electronic component, or provided to extend from a region positioned on a rear side of the heat generating component on the first board to the electronic component.

First claim

What is claimed is:

1. A semiconductor storage device comprising:
a housing having a first vent hole, the housing having a first housing surface and a second housing surface, the second housing surface facing the first housing surface;
a first board accommodated in the housing, the first board having a first surface and a second surface, the second surface being on a side opposite to the first surface, the first surface facing the first housing surface, the second surface facing the second housing surface;
a heat generating component mounted on the second surface of the first board;
a capacitor disposed between the heat generating component and the first vent hole, a position in a thickness direction of the first board being between two ends of the capacitor in the thickness direction, the capacitor having a curved surface on at least a part of an outer shape of the capacitor; and
a thermal-conductive sheet provided to extend over the heat generating component and the capacitor, the thermal-conductive sheet having a first sheet surface, the first sheet surface being in contact with the heat generating component and the capacitor, the thermal-conductive sheet including a first thermal-conductive portion and a second thermal-conductive portion, the first thermal-conductive portion being between the first surface and the first housing surface, the second thermal-conductive portion being between the second surface and the second housing surface, the thermal-conductive sheet having a thermal-conductive curved surface,
the thermal-conductive curved surface having a same shape as that of the curved surface of the capacitor, the thermal-conductive sheet being attached to the capacitor in a state in which the thermal-conductive curved surface is bent along the curved surface of the capacitor, and wherein the thermal-conductive sheet is between the capacitor and the first and second surfaces.

2. The semiconductor storage device according to claim 1 , wherein
a heat capacity of the capacitor is larger than a heat capacity of the heat generating component.

3. The semiconductor storage device according to claim 1 , further comprising:
a second board disposed between the first board and an inner surface of the housing; and
a spacer interposed between the first board and the second board, wherein
at least a part of the thermal-conductive sheet is disposed between the first board and the second board, and
a thickness of the thermal-conductive sheet in the thickness direction is smaller than a thickness of the spacer in the thickness direction.

4. The semiconductor storage device according to claim 1 , further comprising:
a second board disposed between the heat generating component and an inner surface of the housing, wherein
a part of the thermal-conductive sheet is disposed between the heat generating component and the second board, and
the thermal-conductive sheet is provided separately from the second board.

5. The semiconductor storage device according to claim 1 , wherein
the housing has a first end and a second end being positioned on a side opposite to the first end, the first vent hole being provided on the first end, the housing having a second vent hole being provided on the second end,
the heat generating component is positioned closer to the second vent hole than to the first vent hole, and
the capacitor is positioned closer to the first vent hole than to the second vent hole.

6. The semiconductor storage device according to claim 1 , wherein
the heat generating component includes a first semiconductor memory component,
the semiconductor storage device further includes a second semiconductor memory component mounted on the first board and disposed between the first semiconductor memory component and the capacitor, and
the thermal-conductive sheet is provided to extend over the first semiconductor memory component and the second semiconductor memory component.

7. The semiconductor storage device according to claim 1 , wherein
the heat generating component includes a first semiconductor memory component,
the semiconductor storage device further includes:
a second semiconductor memory component mounted on the first board; and
a third semiconductor memory component mounted on the first board, wherein
the second semiconductor memory component is disposed between the first semiconductor memory component and the capacitor, the second semiconductor memory component and the first semiconductor memory component are aligned along a first direction, the first direction being a direction from the first vent hole to the first semiconductor memory component,
the third semiconductor memory component and the first semiconductor memory component or the second semiconductor memory component are aligned along a second direction, the second direction being a direction intersecting the first direction, and
the thermal-conductive sheet is provided to extend over the first semiconductor memory component, the second semiconductor memory component, and the third semiconductor memory component.

8. The semiconductor storage device according to claim 1 , wherein
the curved surface of the capacitor includes a curved surface with a central angle of 180 degrees or more, and
the thermal-conductive curved surface is attached to the capacitor in a state of being bent along the curved surface of the capacitor with a central angle of 180 degrees or more.

9. The semiconductor storage device according to claim 1 , wherein a part of the thermal-conductive sheet is attached to the capacitor at a position between the capacitor and the first vent hole.

10. The semiconductor storage device according to claim 1 , further comprising:
a second board disposed between the first board and an inner surface of the housing, wherein
a thickness of at least a part of the capacitor in the thickness direction is larger than a distance between the first board and the second board in the thickness direction.

11. The semiconductor storage device according to claim 1 , further comprising:
a second board disposed between the first board and an inner surface of the housing; and
a spacer interposed between the first board and the second board, wherein
at least a part of the thermal-conductive sheet is disposed between the first board and the second board,
the spacer includes a guide portion, at least a part of the guide portion being disposed at a position not overlapping the capacitor or the thermal-conductive sheet in a first direction from the first vent hole toward the heat generating component.

12. The semiconductor storage device according to claim 1 , further comprising a thermal connection component interposed between the thermal-conductive sheet and the housing and configured to thermally connect the thermal-conductive sheet and the housing.

13. The semiconductor storage device according to claim 1 , wherein
the first vent hole is provided in a face of the housing being perpendicular to the first board, and
the capacitor is disposed between the heat generating component and the first vent hole in the face.

14. The semiconductor storage device according to claim 1 , wherein
a position of one of the two ends of the capacitor in the thickness direction is between the first surface and the first housing surface in the thickness direction, and
a position of the other of the two ends of the capacitor in the thickness direction is between the second surface and the second housing surface in the thickness direction.

15. The semiconductor storage device according to claim 1 , wherein a first of the two ends of the capacitor

Assignees

• Kioxia Corp

Inventors

• Muto Mitsuhiro

Classifications

• H05K5/0213

  Venting apertures; Constructional details thereof · CPC title

• H05K7/20127

  Natural convection · CPC title

• H05K1/0203

  Cooling of mounted components (H05K1/0272 takes precedence) · CPC title

• H05K1/181

  associated with surface mounted components · CPC title

• H05K2201/10015

  Non-printed capacitor · CPC title