Semiconductor device having a heat conduction member

Patent metadata

Field	Value
Publication number	US-2016307818-A1
Application number	US-201514837980-A
Country	US
Kind code	A1
Filing date	Aug 27, 2015
Priority date	Apr 20, 2015
Publication date	Oct 20, 2016
Grant date	—

Abstract

A semiconductor device includes a substrate having a first surface and a second surface opposite to the first surface, a hole formed through the first and second surfaces of the substrate, a semiconductor element disposed on the first surface to cover the hole, a housing in which the substrate and the semiconductor element are housed, and a heat conduction member disposed in the hole, such that heat generated by the semiconductor element is transferred through the heat conduction member towards a portion of the housing facing the second surface of the substrate.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
a substrate having a first surface and a second surface opposite to the first surface, a hole formed through the first and second surfaces of the substrate; a semiconductor element disposed on the first surface to cover the hole; a housing in which the substrate and the semiconductor element are housed; and a heat conduction member disposed in the hole, such that heat generated by the semiconductor element is transferred through the heat conduction member towards a portion of the housing facing the second surface of the substrate.

2 . The semiconductor device according to claim 1 , wherein
the heat conduction member is in contact with the portion of the housing.

3 . The semiconductor device according to claim 1 , wherein
the heat conduction member is in contact with the semiconductor element.

4 . The semiconductor device according to claim 1 , further comprising:
a connecting member disposed between the semiconductor element and the heat conduction member.

5 . The semiconductor device according to claim 1 , wherein
the heat conduction member is integrally formed with the housing.

6 . The semiconductor device according to claim 1 , wherein
the housing includes a protrusion that protrudes towards an inner space of the housing, and the heat conduction member is in contact with the protrusion.

7 . The semiconductor device according to claim 1 , further comprising:
a semiconductor memory unit disposed on the first surface of the substrate adjacent to the semiconductor element, wherein the semiconductor element is a controller configured to control the semiconductor memory unit.

8 . The semiconductor device according to claim 7 , wherein
a position of the hole is offset from a center of the semiconductor element towards the semiconductor memory unit.

9 . The semiconductor device according to claim 1 , wherein
the semiconductor element is a semiconductor memory unit.

10 . The semiconductor device according to claim 1 , wherein
the heat conduction member is spaced apart from an inner surface of the hole.

11 . The semiconductor device according to claim 1 , further comprising:
a second substrate on which the substrate is mounted and having a hole penetrating therethrough, wherein the heat conduction member is also disposed in the hole of the second substrate.

12 . The semiconductor device according to claim 1 , wherein
the heat conduction member is formed of an elastic material and pressed between the semiconductor element and the housing.

13 . The semiconductor device according to claim 1 , wherein
an end of the heat conduction member facing the housing is adhesive.

14 . The semiconductor device according to claim 1 , wherein
an end of the heat conduction member facing the semiconductor element is adhesive.

15 . The semiconductor device according to claim 1 , further comprising:
a second heat conduction member disposed between the first surface of the substrate and the housing and enclosing the semiconductor element.

16 . The semiconductor device according to claim 15 , wherein
the second heat conduction member is formed of an elastic material and pressed between the semiconductor element and the housing.

17 . A method for transferring heat generated in a semiconductor device including a substrate, a semiconductor element disposed on a first surface of the substrate, and a housing in which the substrate and the semiconductor element are housed, the method comprising:
transferring heat generated by the semiconductor element towards a portion of the housing facing a second surface of the substrate opposite to the first surface, through a heat conduction member disposed in a hole formed in the substrate.

18 . The method according to claim 17 , further comprising:
transferring the heat generated by the semiconductor element towards a portion of the housing facing the first surface of the substrate, through a second heat conduction member disposed between the first surface of the substrate and the housing.

19 . The method according to claim 17 , wherein
the semiconductor device further includes a semiconductor memory unit disposed on the first surface of the substrate adjacent to the semiconductor element, and the semiconductor element is a controller configured to control the semiconductor memory unit.

20 . The method according to claim 17 , wherein
the semiconductor element is a semiconductor memory unit.

Assignees

• Toshiba Kk

Inventors

• Kawase Masayasu
• Sugita Masato

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W70/635

  Through-vias · CPC title

• H10W40/228 Primary

  the projecting parts being wire-shaped or pin-shaped · CPC title

• H10W40/22 Primary

  characterised by their shape, e.g. having conical or cylindrical projections · CPC title

• H01L23/3675 Primary

  Electricity · mapped topic