Cleaning formulation for removing residues on surfaces

Patent metadata

Field	Value
Publication number	US-11401487-B2
Application number	US-202217582077-A
Country	US
Kind code	B2
Filing date	Jan 24, 2022
Priority date	Dec 6, 2013
Publication date	Aug 2, 2022
Grant date	Aug 2, 2022

Abstract

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

First claim

What is claimed is:

1. A cleaning composition, comprising:
1) hydroxylamine in an amount of from about 0.5% to about 20% by weight of the composition;
2) a chelating agent comprising at least two nitrogen containing groups, wherein the at least two nitrogen groups comprise a primary amino group and a secondary amino group, and the chelating agent is in an amount of from about 0.01% to about 1.8% by weight of the composition;
3) an alkylene glycol; and
4) water;
wherein the composition has a pH of from about 7 to about 11.

2. The composition of claim 1 , wherein the composition is non-corrosive.

3. The composition of claim 1 , wherein the hydroxylamine is in an amount of from about 5% to about 15% by weight of the composition.

4. The composition of claim 1 , wherein the chelating agent is in an amount of from about 0.01% to about 1% by weight of the composition.

5. The composition of claim 1 , wherein the alkylene glycol is in an amount of at most about 30% by weight of the composition.

6. The composition of claim 1 , wherein the alkylene glycol is in an amount of at most about 20% by weight of the composition.

7. The composition of claim 1 , wherein the alkylene glycol is in an amount of at least about 1% by weight of the composition.

8. The composition of claim 1 , wherein the composition comprises a metal corrosion inhibitor.

9. The composition of claim 8 , wherein the metal corrosion inhibitor comprises a substituted or unsubstituted benzotriazole.

10. The composition of claim 9 , wherein the benzotriazole is in an amount of from about 0.05% to about 1% by weight of the composition.

11. The composition of claim 1 , wherein the water is in an amount of at most about 90% by weight of the composition.

12. The composition of claim 1 , wherein the composition comprises a surfactant or an additional chelating agent.

13. The composition of claim 1 , wherein
the hydroxylamine is in an amount of from about 5% to about 15% by weight of the composition;
the chelating agent is in an amount of from about 0.01% to about 1% by weight of the composition;
the alkylene glycol is in an amount of at most about 30% by weight of the composition; and
the water is in an amount of at most about 90% by weight of the composition.

14. The composition of claim 13 , wherein the alkylene glycol is in an amount of at least about 1% by weight of the composition.

15. The composition of claim 13 , wherein the composition comprises a metal corrosion inhibitor.

16. The composition of claim 15 , wherein the metal corrosion inhibitor comprises a substituted or unsubstituted benzotria.zole.

17. The composition of claim 16 , wherein the benzotdazole is in an amount of from about 0.05% to about 1% by weight of the composition.

18. The composition of claim 1 , wherein the composition comprises a surfactant or an additional chelating agent.

19. A cleaning composition, comprising:
1) hydroxylamine in an amount of from about 0.5% to about 20% by weight of the composition;
2) a. chelating agent comprising at least two nitrogen containing groups, wherein the at least two nitrogen groups comprise a primary amino group and a secondary amino group, and the chelating agent is in an amount of from about 0.01% to about 1% by weight of the composition;
3) a metal corrosion inhibitor; and
4) water;
wherein the pH of the composition is from about 7 to about 11.

20. The composition of claim 19 , wherein the hydroxylamine is in an amount of from about 5% to about 15% by weight of the composition.

21. The composition of claim 19 , wherein the metal corrosion inhibitor comprises a substituted or unsubstituted benzotriazole.

22. The composition of claim 21 , wherein the benzotriazole is in an amount of from about 0.05% to about 1% by weight of the composition.

23. The composition of claim 1 , wherein the water is in an amount of at most about 90% by weight of the composition.

24. The composition of claim 1 , further comprising an alkylene glycol in an amount of at most about 30% by weight of the composition.

25. The composition of claim 24 , wherein the alkylene glycol is in an amount of at least about 1% by weight of the composition.

26. The composition of claim 24 , wherein
the hydroxyl amine is in an amount of from about 5% to about 15% by weight of the composition;
the metal corrosion inhibitor is in an amount of from about 0.05% to about 1% by weight of the composition;
the alkylene glycol is in an amount of from about 1% to about 30% by weight of the composition; and
the water is in an amount of at most about 90% by weight of the composition.

27. A cleaning composition, comprising:
1) hydroxylamine in an amount of from about 0.5% to about 20% by weight of the composition;
2) a chelating agent comprising at least two nitrogen containing groups, wherein each of the two nitrogen groups, independently, is a primary amino group or a secondary amino group, and the chelating agent is in an amount of from about 0.01% to about 1.8% by weight of the composition;
3) an alkylene glycol; and
4) water;
wherein the composition has a p1:1 of from about 7 to about 11.

28. The composition of claim 27 , further comprising a metal corrosion inhibitor or an additional chelating agent.

Assignees

• Fujifilm Electronic Mat Usa Inc
• Fujifilm Electronics Mat U S A Inc

Inventors

• Takahashi Tomonori
• Du Bing
• Wojtczak William A
• Dory Thomas
• Kneer Emil A

Classifications

• H10P76/204

  of organic photoresist masks · CPC title

• H10P70/273

  the processing being a delineation of conductive layers, e.g. by RIE · CPC title

• H10P70/234

  the processing being the formation of vias or contact holes · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P50/287

  by chemical means · CPC title