Cleaning formulations for removing residues on semiconductor substrates
US-10533146-B2 · Jan 14, 2020 · US
US10927329B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10927329-B2 |
| Application number | US-201916361637-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 22, 2019 |
| Priority date | Dec 6, 2013 |
| Publication date | Feb 23, 2021 |
| Grant date | Feb 23, 2021 |
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This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
Opening claim text (preview).
What is claimed is: 1. A cleaning composition, comprising: 1) hydroxylamine; 2) an alkanolamine in an amount of at most about 3% by weight of the composition; 3) an alkylene glycol; and 4) water wherein the pH of the composition is from about 7 to about 11. 2. The composition of claim 1 , wherein the pH of the composition is about 11. 3. The composition of claim 1 , wherein the hydroxylamine is in an amount of from about 0.5% to about 20% by weight of the composition. 4. The composition of claim 1 , wherein the hydroxylamine is in an amount of from about 1% to about 10% by weight of the composition. 5. The composition of claim 1 , wherein the alkanolamine is in an amount of at most about 2.5 by weight of the composition. 6. The composition of claim 1 , wherein the alkanolamine is in an amount of at most about 1.5% by weight of the composition. 7. The composition of claim 1 , wherein the alkanolamine is in an amount of at least about 0.1% by weight of the composition. 8. The composition of claim 1 , wherein the alkylene glycol is ethylene glycol, propylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol, or tetraethylene glycol. 9. The composition of claim 1 , wherein the alkylene glycol is in an amount of at least about 10% by weight of the composition. 10. The composition of claim 1 , wherein the alkylene glycol is in an amount of at most about 30% by weight of the composition. 11. The composition of claim 1 , wherein the water is in an amount of at most about 90% by weight of the composition. 12. The composition of claim 1 , wherein the water is in an amount of at least about 78% by weight of the composition. 13. The composition of claim 1 , further comprising an additive. 14. The composition of claim 1 , further comprising a surfactant. 15. The composition of claim 1 , wherein the composition is free of a metal halide of the formula W z MX y , in which W is selected from H, an alkali or alkaline earth metal, and a metal-ion-free hydroxide base moiety; M is a metal selected from the group consisting of Si, Ge, Sn, Pt, P, B, Au, Ir, Os, Cr, Ti, Zr, Rh, Ru and Sb; y is from 4 to 6; and z is 1, 2, or 3.
of organic photoresist masks · CPC title
the processing being a delineation of conductive layers, e.g. by RIE · CPC title
the processing being the formation of vias or contact holes · CPC title
during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title
by chemical means · CPC title
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