Cleaning formulation for removing residues on surfaces

Patent metadata

Field	Value
Publication number	US-10415005-B2
Application number	US-201916400061-A
Country	US
Kind code	B2
Filing date	May 1, 2019
Priority date	Dec 6, 2013
Publication date	Sep 17, 2019
Grant date	Sep 17, 2019

Abstract

This disclosure relates to a cleaning composition that contains 1) hydroxylamine in an amount of from about 0.5% to about 20% by weight of the composition; 2) a pH adjusting agent, the pH adjusting agent being a base free of a metal ion and in an amount of at most about 3% by weight of the composition; 3) an alkylene glycol; and 4) water; in which the pH of the composition is from about 7 to about 11. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

First claim

What is claimed is:

1. A cleaning composition, comprising:
1) hydroxylamine in an amount of from about 0.5% to about 20% by weight of the composition;
2) a pH adjusting agent, the pH adjusting agent being a base free of a metal ion and in an amount of at most about 3% by weight of the composition;
3) an alkylene glycol; and
4) water;
wherein the pH of the composition is from about 7 to about 11, and the composition is free of a guanidine salt and a quaternary ammonium hydroxide.

2. The composition of claim 1 , wherein the pH of the composition is about 11.

3. The composition of claim 1 , wherein the hydroxylamine is in an amount of from about 1% to about 10% by weight of the composition.

4. The composition of claim 1 , wherein the pH adjusting agent is an ammonium hydroxide, a monoamine or an imine.

5. The composition of claim 1 , wherein the pH adjusting agent is an alkanolamine.

6. The composition of claim 1 , wherein the pH adjusting agent is in an amount of at least about 0.1% by weight of the composition.

7. The composition of claim 1 , wherein the pH adjusting agent is in an amount of at most about 1.5% by weight of the composition.

8. The composition of claim 1 , wherein the alkylene glycol is ethylene glycol, propylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol, or tetraethylene glycol.

9. The composition of claim 1 , wherein the alkylene glycol is in an amount of at least about 10% by weight of the composition.

10. The composition of claim 1 , wherein the alkylene glycol is in an amount of at most about 30% by weight of the composition.

11. The composition of claim 1 , wherein the water is in an amount of at most about 90% by weight of the composition.

12. The composition of claim 1 , wherein the water is in an amount of at least about 78% by weight of the composition.

13. The composition of claim 1 , further comprising at least one additive.

14. The composition of claim 1 , further comprising a surfactant.

15. The composition of claim 1 , wherein the composition is free of a metal halide of the formula W z MX y , in which W is selected from H, an alkali or alkaline earth metal, and a metal-ion-free hydroxide base moiety; M is a metal selected from the group consisting of Si, Ge, Sn, Pt, P, B, Au, Ir, Os, Cr, Ti, Zr, Rh, Ru and Sb; y is from 4 to 6; and z is 1, 2, or 3.

Assignees

• Fujifilm Electronic Mat Usa Inc

Inventors

• Takahashi Tomonori
• Du Bing
• Wojtczak William A
• Dory Thomas
• Kneer Emil A

Classifications

• H10P76/204

  of organic photoresist masks · CPC title

• H10P70/273

  the processing being a delineation of conductive layers, e.g. by RIE · CPC title

• H10P70/234

  the processing being the formation of vias or contact holes · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P50/287

  by chemical means · CPC title