Substrate processing method and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-11049723-B2
Application number	US-202016736964-A
Country	US
Kind code	B2
Filing date	Jan 8, 2020
Priority date	Jan 9, 2019
Publication date	Jun 29, 2021
Grant date	Jun 29, 2021

Abstract

A substrate processing method includes: maintaining an atmosphere in contact with at least a surface of a substrate on which a first material that is a metal and a second material that is a material other than the first material are exposed, as a deoxidized atmosphere; supplying a film forming material, which selectively forms a film on the first material among the first material and the second material, to the surface of the substrate in a state where the deoxidized atmosphere is maintained by the maintaining; performing a surface treatment of the second material in a state where the film is formed on a surface of the first material supplied in the supplying the film forming material; and removing the film from the surface of the first material after the performing the surface treatment.

First claim

What is claimed is:

1. A substrate processing method comprising:
maintaining an atmosphere in contact with at least a surface of a substrate on which a first material that is a metal and a second material that is a material other than the first material are exposed, as a deoxidized atmosphere;
supplying a film forming material, which selectively forms a film on the first material among the first material and the second material, to the surface of the substrate in a state where the deoxidized atmosphere is maintained by the maintaining;
performing a surface treatment of the second material in a state where the film is formed on a surface of the first material supplied in the supplying the film forming material; and
removing the film from the surface of the first material after the performing the surface treatment,
wherein the metal includes tungsten and at least one of gold, silver, copper, platinum, palladium, iron, nickel, zinc, cobalt, and ruthenium and the film forming material contains sulfur atoms and a liquid or gas containing a molecule having a Si—N bond.

2. The substrate processing method according to claim 1 , wherein the film forming material is a deoxidized liquid or gas that contains sulfur atoms.

3. The substrate processing method according to claim 1 , further comprising:
removing an oxide film from the surface of the first material in a state where the deoxidized atmosphere is maintained by the maintaining before the supplying the film forming material.

4. The substrate processing method according to claim 3 , wherein the removing the oxide film includes supplying a deoxidized chemical liquid, and a supplying a deoxidized rinsing liquid.

5. The substrate processing method according to claim 3 , further comprising:
removing an organic material from the surface of the first material before the removing the oxide film.

6. The substrate processing method according to claim 1 , wherein, in the removing the film from the surface of the first material, the film is removed from the surface of the first material using a reducing agent.

7. The substrate processing method according to claim 6 , further comprising:
removing the film remaining on the surface of the first material by supplying an etching liquid to the surface of the first material after the removing the film from the surface of the first material.

8. The substrate processing method according to claim 1 , wherein, in the removing the film from the surface of the first material, the film is removed from the surface of the first material by irradiating a surface of the first material with ultraviolet rays.

9. The substrate processing method according to claim 1 , wherein the supplying the film forming material is performed in a state where at least one of the surface of the substrate and the film forming material is heated.

10. The substrate processing method according to claim 1 , wherein the film formed on the surface of the first material is a metal film formed by plating.

Assignees

• Tokyo Electron Ltd

Inventors

• Hiroshiro Koukichi
• HIGUCHI Rintaro
• Kagawa Koji
• Sekiguchi Kenji

Classifications

• H10P95/00 Primary

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P90/12

  Preparing bulk and homogeneous wafers · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0432

  mainly by conduction · CPC title

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title