Method for manufacturing a semiconductor device and a coating material

Patent metadata

Field	Value
Publication number	US-10529552-B2
Application number	US-201815905501-A
Country	US
Kind code	B2
Filing date	Feb 26, 2018
Priority date	Nov 29, 2017
Publication date	Jan 7, 2020
Grant date	Jan 7, 2020

Abstract

In a method of manufacturing a semiconductor device, an underlying structure is formed. A surface grafting layer is formed on the underlying structure. A photo resist layer is formed on the surface grafting layer. The surface grafting layer includes a coating material including a backbone polymer, a surface grafting unit coupled to the backbone polymer and an adhesion unit coupled to the backbone polymer.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, the method comprising:
forming an underlying structure;
forming a surface grafting layer on the underlying structure; and
forming a photo resist layer on the surface grafting layer,
wherein the surface grafting layer includes a coating material comprising:
a backbone polymer;
a polarity switching unit coupled to the backbone polymer as a side chain;
a surface grafting unit coupled to an end of the backbone polymer; and
an adhesion unit different from the surface grafting unit and coupled to the backbone polymer as a side chain.

2. The method of claim 1 , wherein the surface grafting unit includes one selected from the group consisting of —OH, —COOH, —NH and —SH.

3. The method of claim 2 , wherein the adhesion unit is coupled to the backbone polymer as a side chain.

4. The method of claim 1 , wherein the backbone polymer includes at least one selected from the group consisting of poly-methyl methacrylate (PMMA), polystyrene (PS) and polyhydroxystyrene (PHS).

5. The method of claim 1 , wherein:
the photo resist layer includes a negative tone photo resist,
and
the polarity switching unit is at least one selected from the group consisting of t-BOC protected polyhydroxystyrene, methyl adamantyl methacrylate (MAdMA), ethyl adamantyl methacrylate (EAdMA) and propyl adamantyl methacrylate (PAdMA).

6. The method of claim 1 , wherein the coating material further comprises an acidic component or an acid quencher coupled to the backbone polymer as a side chain.

7. A method of manufacturing a semiconductor device, the method comprising:
forming an underlying structure;
forming a first dielectric layer on the underlying structure;
forming an etch stop layer on the first dielectric layer, the etch stop layer including a silicon based material;
forming a second dielectric layer on the etch stop layer;
forming a surface grafting layer on the second dielectric layer; and
forming a photo resist layer on the surface grafting layer,
wherein the surface grafting layer includes a coating material comprising:
a backbone polymer;
a surface grafting unit coupled to an end of the backbone polymer; and
an adhesion unit different from the surface grafting unit and coupled to the backbone polymer as a side chain.

8. The method of claim 7 , further comprising:
patterning the photo resist layer, thereby forming a resist pattern; and
etching the surface grafting layer and the etch stop layer by using the resist pattern as an etching mask.

9. The method of claim 7 , wherein the silicon based material includes silicon oxide.

10. The method of claim 7 , wherein a thickness of the surface grafting layer is in a range from 1 nm to 10 nm.

11. The method of claim 3 , wherein the adhesion unit includes one or more units selected from the group consisting of ketones, ethers, amides, carboxylic acids and alcohols.

12. The method of claim 1 , wherein the coating material further comprises a surfactant.

13. The method of claim 7 , wherein the surface grafting unit includes one selected from the group consisting of —NH, —OH, —SH and —COOH.

14. The method of claim 7 , wherein the adhesion unit is coupled to the backbone polymer as a side chain and includes one or more units selected from the group consisting of ketones, ethers, amides, carboxylic acids and alcohols.

15. The method of claim 7 , wherein the backbone polymer includes at least one selected from the group consisting of poly-methyl methacrylate (PMMA), polystyrene (PS) and polyhydroxystyrene (PHS).

16. The method of claim 7 , wherein the coating material further comprises a polarity switching unit coupled to the backbone polymer as a side chain,
wherein the polarity switching unit is at least one selected from the group consisting of t-BOC protected polyhydroxystyrene, methyl adamantyl methacrylate (MAdMA), ethyl adamantyl methacrylate (EAdMA) and propyl adamantyl methacrylate (PAdMA).

17. The method of claim 7 , wherein the coating material further comprises an acidic component or an acid quencher coupled to the backbone polymer as a side chain.

18. The method of claim 7 , wherein the coating material further comprises a surfactant.

19. A method of manufacturing a semiconductor device, the method comprising:
forming an underlying structure;
forming a first dielectric layer over the underlying structure;
forming a silicon nitride layer on the first dielectric layer;
forming a second dielectric layer on the silicon nitride layer;
forming a first hard mask layer on the second dielectric layer;
forming a bottom layer on the hard mask layer;
forming a middle layer on the bottom layer;
forming a surface grafting layer on the middle layer;
forming a photo resist layer on the surface grafting layer;
patterning the photo resist layer, thereby forming a resist pattern; and
etching the surface grafting layer and the middle layer by using the resist pattern as an etching mask,
wherein the surface grafting layer includes a coating material comprising:
a backbone polymer;
a surface grafting unit coupled to an end of the backbone polymer; and
an adhesion unit different from the surface grafting unit and coupled to the backbone polymer as a side chain.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chien Yu-Ling Chang
• Chen Chien-Chih
• Lin Chin-Hsiang
• Chang Ching-Yu
• Cheng Yahru

Classifications

• C09D125/18

  Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P76/204

  of organic photoresist masks · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P50/283

  by chemical means · CPC title