Method of forming a photoresist layer

Patent metadata

Field	Value
Publication number	US-9875892-B2
Application number	US-201514707387-A
Country	US
Kind code	B2
Filing date	May 8, 2015
Priority date	Sep 4, 2012
Publication date	Jan 23, 2018
Grant date	Jan 23, 2018

Abstract

A method for forming a photoresist layer on a semiconductor device is disclosed. An exemplary includes providing a wafer. The method further includes spinning the wafer during a first cycle at a first speed, while a pre-wet material is dispensed over the wafer and spinning the wafer during the first cycle at a second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer during a second cycle at the first speed, while the pre-wet material continues to be dispensed over the wafer and spinning the wafer during the second cycle at the second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer at a third speed, while a photoresist material is dispensed over the wafer including the pre-wet material.

First claim

What is claimed is:

1. A method comprising:
providing a wafer having a first surface;
dispensing a first material over the first surface of the wafer during a first spin cycle, a second spin cycle after the first spin cycle, and a third spin cycle after the second spin cycle,
wherein the first spin cycle includes spinning the wafer at a first speed for a first period of time and spinning the wafer at a second speed for a second period of time that is after the first period of time, wherein the second speed is less than the first speed,
wherein the second spin cycle includes spinning the wafer at a third speed for a third period of time and spinning the wafer at a fourth speed for a fourth period of time that is after the third period of time, wherein the fourth speed is less than the third speed and the second speed is less than the third speed,
wherein the third spin cycle includes spinning the wafer at a fifth speed for a fifth period of time; and
dispensing a second material over the first surface of the wafer including the first material, during a fourth spin cycle after the first, second, and third spin cycles, wherein the second material is different from the first material.

2. The method of claim 1 wherein the first speed, the third speed and the fifth speed are the same, wherein the second speed and the fourth speed are the same.

3. The method of claim 1 wherein the first period of time, the third period of time and the fifth period of time are the same, wherein the second period of time and the fourth period of time are the same.

4. The method of claim 1 wherein the second speed and the fourth speed are different, wherein the first period of time, the third period of time, and the fifth period of time are different, and wherein the second period of time and the fourth period of time are different.

5. The method of claim 1 wherein the second material is at least one of: a bottom antireflective coating (BARC) material or a photoresist material.

6. The method of claim 1 wherein the first material is a resist reducing consumption (RRC) material.

7. The method of claim 1 wherein the first speed is greater than 300 RPMs, and wherein the second speed is between 0 and 100 RPMs.

8. The method of claim 1 , wherein the first surface includes integrated circuit topography.

9. A method comprising:
receiving a wafer;
accelerating the wafer to a first spin speed and dispensing a first material over the wafer while the first spin speed is maintained for a first period of time;
decelerating the wafer from the first spin speed;
accelerating the wafer to a second spin speed and dispensing the first material over the wafer while the second spin speed is maintained for a second period of time;
decelerating the wafer from the second spin speed;
accelerating the wafer to a third spin speed and dispensing the first material over the wafer while the third spin speed is maintained for a third period of time; and
accelerating the wafer to a fourth spin speed and dispensing a second material over the wafer including the first material while the fourth spin speed is maintained for a fourth period of time, wherein the second material is different than the first material.

10. The method of claim 9 wherein the first spin speed, the second spin speed and the third spin speed are the same, wherein the first period of time, the second period of time and the third period of time are the same.

11. The method of claim 9 further comprising:
before dispensing the second material over the wafer including the first material, dispensing a bottom antireflective coating (BARC) material over the wafer including the first material.

12. The method of claim 9 further comprising:
stopping the dispensing of the second material; and
after stopping the dispensing of the second material, accelerating and decelerating the wafer according to a predetermined speed profile to thereby control a thickness uniformity of the second material across the wafer.

13. The method of claim 9 wherein the first spin speed, the second spin speed, and the third spin speed are different, wherein the first period of time, the second period of time and the third period of time are different.

14. The method of claim 9 wherein the second material is at least one of: a bottom antireflective coating (BARC) material or a photoresist material,
wherein the first material is a resist reducing consumption (RRC) material.

15. The method of claim 13 wherein the first spin speed ranges from about 300 RPMs to about 600 RPMs, and
wherein the wafer is decelerated from the first spin speed to a spin speed that ranges from about 0 RPMs to about 20 RPMs.

16. The method of claim 13 wherein the first period of time is less than 2 seconds, wherein the second period of time is less than the first period of time, wherein the third period of time is less than the second period of time.

17. A method comprising:
coating a wafer with a first material while a multi-loop process is performed on the wafer in a wafer processing device, wherein the multi-loop process includes:
accelerating the wafer to a first spin speed;
maintaining the first spin speed for a first period of time;
decelerating the wafer from the first spin speed to a second spin speed; maintaining the second spin speed for a second period of time;
accelerating the wafer from the second spin speed to a third spin speed;
maintaining the third spin speed for a third period of time;
decelerating the wafer from the third spin speed to a fourth spin speed;
maintaining the fourth spin speed for a fourth period of time;
accelerating the wafer from the fourth spin speed to a fifth spin speed;
maintaining the fifth spin speed for a fifth period of time; and
after the multi-loop process, accelerating the wafer to another spin speed; and dispensing a second material over the wafer, wherein the wafer includes the first material.

18. The method of claim 17 wherein the first period of time is greater than the second period of time, wherein the second period of time is greater than the third period of time, wherein the third period of time is greater than the fourth period of time, wherein the fourth period of time is greater than the fifth period of time.

19. The method of claim 17 further comprising:
performing a modulation process on the wafer according to a predetermined speed profile to thereby control a thickness uniformity of the second material across the wafer.

20. The method of claim 19 further comprising:
before coating the wafer including the first material with the second material, coating the wafer including the first material with a bottom antireflective coating (BARC) material.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chang Chun-Wei
• Wang Chih-Chien
• Mo Wang-Pen
• Hsieh Hung-Chang

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P76/20

  of masks comprising organic materials · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10P72/0448 Primary

  Apparatus for applying a liquid, a resin, an ink or the like · CPC title

• H01L21/0276

  Electricity · mapped topic