Photoactive compound gradient photoresist

Patent metadata

Field	Value
Publication number	US-9859206-B2
Application number	US-201414149505-A
Country	US
Kind code	B2
Filing date	Jan 7, 2014
Priority date	Jul 27, 2011
Publication date	Jan 2, 2018
Grant date	Jan 2, 2018

Abstract

A system and method for forming photoresists over semiconductor substrates is provided. An embodiment comprises a photoresist with a concentration gradient. The concentration gradient may be formed by using a series of dry film photoresists, wherein each separate dry film photoresist has a different concentration. The separate dry film photoresists may be formed separately and then placed onto the semiconductor substrate before being patterned. Once patterned, openings through the photoresist may have a tapered sidewall, allowing for a better coverage of the seed layer and a more uniform process to form conductive materials through the photoresist.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first substrate and a second substrate over the first substrate;
a photoresist over the first substrate and the second substrate, the photoresist having a first concentration of photoactive compounds adjacent to the first substrate and a second concentration of photoactive compounds at a point removed from the first substrate, the second concentration of photoactive compounds being less than the first concentration of photoactive compounds;
a first contact extending through the photoresist and in electrical connection with the first substrate, the first contact having a first tapered sidewall extending from a first side of the photoresist to a second side of the photoresist opposite the first side and adjacent to the first substrate, the first tapered sidewall facing a portion of the photoresist with the first concentration of photoactive compounds, wherein the first contact has a first width as the first contact extends through the first concentration and a second width as the first contact extends through the second concentration, the second width being larger than the first width, and wherein a centerpoint of the second width overlies a center point of the first width; and
a second contact extending through the photoresist and in electrical connection with the second substrate, the second contact having a second tapered sidewall.

2. The semiconductor device of claim 1 , wherein the first substrate is a semiconductor substrate and the second substrate is a semiconductor die.

3. The semiconductor device of claim 1 , wherein there is a step profile between the first concentration and the second concentration.

4. The semiconductor device of claim 1 , wherein the photoresist is a dry film photoresist.

5. The semiconductor device of claim 4 , wherein the dry film photoresist further comprises:
a first layer with a first concentration of photoactive compounds, the first layer being adjacent to the first substrate; and
a second layer with a second concentration of photoactive compounds, wherein the second layer is over the first layer and the second concentration is less than the first concentration.

6. The semiconductor device of claim 5 , further comprising:
a third layer with a third concentration of photoactive compounds, wherein the third layer is over the second layer and the third concentration is less than the second concentration; and
a fourth layer with a fourth concentration of photoactive compounds, wherein the fourth layer is over the third layer and the fourth concentration is less than the third concentration.

7. A semiconductor device comprising:
a first semiconductor die;
a second semiconductor die over the first semiconductor die in a first direction perpendicular with a major surface of the first semiconductor die;
a first photoresist layer with a first concentration of photoactive compounds;
a second photoresist layer over the first photoresist layer, wherein the second photoresist layer has a second concentration of photoactive compounds, wherein the second concentration is different from the first concentration;
a first conductive material directly over the first semiconductor die in the first direction, the first conductive material extending through the first photoresist layer and the second photoresist layer to make electrical contact with the first semiconductor die, wherein the first conductive material has a first width as the first conductive material extends through the first photoresist layer and a second width as the first conductive material extends through the second photoresist layer, the second width being larger than the first width, and wherein a centerpoint of the second width overlies a center point of the first width; and
a second conductive material extending through the first photoresist layer and the second photoresist layer to make electrical contact with the second semiconductor die.

8. The semiconductor device of claim 7 , wherein there is a step profile between the first concentration and the second concentration.

9. The semiconductor device of claim 7 , wherein the first photoresist layer is a laminate photoresist.

10. The semiconductor device of claim 7 , further comprising a third photoresist layer with a third concentration of photoactive compounds, wherein the third photoresist layer is over the second photoresist layer and the third concentration is different than the second concentration.

11. The semiconductor device of claim 10 , further comprising a fourth photoresist layer with a fourth concentration of photoactive compounds, wherein the fourth photoresist layer is over the third photoresist layer and the fourth concentration is different than the third concentration.

12. The semiconductor device of claim 7 , wherein the first conductive material is tapered as it extends towards the first semiconductor die.

13. The semiconductor device of claim 12 , wherein the second conductive material is tapered as it extends towards the second semiconductor die.

14. The semiconductor device of claim 7 , wherein the first conductive material extends over the first photoresist layer.

15. A semiconductor device comprising:
a first semiconductor die over a second semiconductor die, wherein the first semiconductor die has a smaller length than the second semiconductor die;
a photoresist material over both the first semiconductor die and the second semiconductor die, wherein the photoresist material has a first maximum thickness and comprises:
a first layer with a first concentration of photoactive compounds;
a second layer over the first layer, wherein the second layer has a second concentration of photoactive compounds, wherein the second concentration of photoactive compounds is less than the first concentration of photoactive compounds;

a first opening through the photoresist material to the first semiconductor die, wherein the first opening is free from overlying portions of the photoresist material;
a second opening through the photoresist material to the second semiconductor die;
a first conductive material in the first opening, wherein the first conductive material has sidewalls and a thickness along the sidewalls at least as large as the first maximum thickness, wherein the first conductive material has a first width as the first conductive material extends through the first layer and a second width as the first conductive material extends through the second layer, the second width being larger than the first width, and wherein a centerpoint of the second width overlies a center point of the first width; and
a second conductive material in the second opening.

16. The semiconductor device of claim 15 , wherein the first concentration of photoactive compounds is constant throughout the first layer.

17. The semiconductor device of claim 16 , wherein the second concentration of photoactive compounds is constant throughout the second layer.

18. The semiconductor device of claim 15 , wherein the photoresist material further comprises a third layer with a third concentration of photoactive compounds, wherein the third concentration of photoactive compounds is different from the first concentration of photoactive compounds and different from the second concentration of photoactive compounds.

19. The semiconductor device of claim 15 , wherein the first opening has a first width through the first layer of about of about 100 μm and a second width through the second layer of about 110 μm.

20. The semiconduct

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Yu Chen-Hua
• Liu Chung-Shi
• Kuo Hung-Jui

Classifications

• H10W90/20

  Configurations of stacked chips · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W72/874

  On different surfaces · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W70/093

  Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps · CPC title