Method for evaluating quality of oxide semiconductor thin film, method for managing quality of oxide semiconductor thin film, and device for manufacturing semiconductor using said method for managing quality

Patent metadata

Field	Value
Publication number	US-10475711-B2
Application number	US-201716096093-A
Country	US
Kind code	B2
Filing date	Apr 26, 2017
Priority date	Apr 27, 2016
Publication date	Nov 12, 2019
Grant date	Nov 12, 2019

Abstract

A quality evaluation method for an oxide semiconductor thin film includes: selecting a peak value having a largest calculated value and a time constant for the peak value among calculated values obtained by substituting each signal value for respective elapsed times after stopping excitation light irradiation and the corresponding elapsed time into the following Equation (1); and estimating, from the peak value and the time constant, an energy level of defect state and the defect density in the oxide semiconductor thin film:

x =(signal value)×(elapsed time for the signal value)  Equation 1.

First claim

The invention claimed is:

1. A quality evaluation method for an oxide semiconductor thin film comprising:
a first step, which comprises; irradiating a sample having an oxide semiconductor thin film formed thereover with excitation light and microwave to measure a maximum value of reflectance of the microwave from the oxide semiconductor thin film; subsequently stopping the irradiation with the excitation light; measuring temporal reflectance of the microwave from the oxide semiconductor thin film with the lapse of time after the stopping of the excitation light irradiation; and recording the reflectance of the microwave as a signal value for each of elapsed times (μsec) after the stopping of the excitation light irradiation; and
a second step, which comprises; selecting a peak value having a largest calculated value and a time constant (μsec) for the peak value among calculated values obtained by substituting each signal value for respective elapsed times after stopping the excitation light irradiation and the corresponding elapsed time into the following Equation (1); and estimating, from the peak value and the time constant, an energy level of defect state and the defect density existing in the oxide semiconductor thin film:
x =(signal value)×(elapsed time for the signal value)  Equation 1,

wherein
x: calculated value,
signal value (mV): reflectance of the microwave, and
elapsed time for the signal value: time (μsec) which has elapsed from the stopping of the excitation light irradiation to the signal value.

2. The quality evaluation method for an oxide semiconductor thin film according to claim 1 , wherein in the second step, the peak value having a largest calculated value and the time constant (μsec) for the peak value are selected on the basis of a microwave-reflectance elapse curve obtained from the calculated values as ordinate and the time constants (μsec) as abscissa.

3. The quality evaluation method for an oxide semiconductor thin film according to claim 1 , wherein, on the basis of the peak value and the time constant for the peak value, light irradiation and negative-bias or positive-bias are applied to a thin film transistor to evaluate threshold voltage change ΔV th between before and after the application.

4. The quality evaluation method for an oxide semiconductor thin film according to claim 1 , wherein in the second step, in the case where a microwave reflectance elapse curve is obtained from the calculated vales as ordinate and logarithms of the time constants (μsec), which are elapsed times after the stopping of the excitation light irradiation, as abscissa, and where the axis of the ordinate and the axis of the abscissa are taken as y-axis and x-axis respectively, a total defect density existing in the oxide semiconductor thin film is estimated from a value of an area surrounded by the elapse curve, the straight line of y=0, a straight line of x=t 1 , and a straight line of x=t 2 , wherein t 1 and t 2 are any time constants satisfying t 1 <t 2 .

5. The quality evaluation method for an oxide semiconductor thin film according to claim 4 , wherein, on the basis of the value of the area surrounded by the elapse curve, the straight line of y=0, the straight line of x=t 1 , and the straight line of x=t 2 , light irradiation and negative-bias or positive-bias are applied to a thin film transistor to evaluate threshold voltage change ΔV th between before and after the application.

6. The quality evaluation method for an oxide semiconductor thin film according to claim 1 , wherein the oxide semiconductor thin film comprises at least one element selected from the group consisting of In, Ga, Zn, and Sn.

7. The quality evaluation method for an oxide semiconductor thin film according to claim 1 , wherein the oxide semiconductor thin film is deposited on a surface of a gate insulating film.

8. The quality evaluation method for an oxide semiconductor thin film according to claim 1 , wherein the oxide semiconductor thin film has a passivation film on a surface thereof.

9. A method for controlling the quality of an oxide semiconductor thin film, wherein the evaluation method according to claim 1 is applied to at least one of the steps for manufacturing a semiconductor.

Assignees

• Kobe Steel Ltd

Inventors

• Hayashi Kazushi
• Ochi Mototaka
• Kugimiya Toshihiro

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10P74/203 Primary

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• G01R31/2656

  using non-ionising electromagnetic radiation, e.g. optical radiation · CPC title

• G01R31/2621

  for testing field effect transistors, i.e. FET's · CPC title