Method for evaluating oxide semiconductor thin film, method for managing quality of oxide semiconductor thin film, and evaluation element and evaluation device used in above evaluation method

Patent metadata

Field	Value
Publication number	US-2016282284-A1
Application number	US-201415031990-A
Country	US
Kind code	A1
Filing date	Dec 1, 2014
Priority date	Dec 3, 2013
Publication date	Sep 29, 2016
Grant date	—

Abstract

The present invention provides a method for accurately and easily measuring/evaluating/predicting/estimating the electrical resistance of an oxide semiconductor thin film, and a method for managing the film quality. The method for evaluating an oxide semiconductor thin film includes: a first step for irradiating, with excitation light and microwave, a sample on which an oxide semiconductor thin film is formed, measuring the maximum value of the reflected microwave by the thin film which changes due to the excitation light irradiation, then stopping the excitation light irradiation and measuring the change in reflectivity of the microwave from the thin film after the excitation light irradiation has been stopped; and a second step for calculating a parameter corresponding to the slow decay observed after the excitation light irradiation has been stopped from the change in the reflectivity and evaluating the electrical resistivity of the oxide semiconductor thin film.

First claim

1 . A method for evaluating an oxide semiconductor thin film, the method comprising:
a first step of
irradiating excitation light and microwave to an oxide semiconductor thin film,
measuring a maximum of a reflected microwave from the oxide semiconductor thin film, which varies with the irradiation of the excitation light, and
then stopping the irradiation of the excitation light and
measuring a temporal variation in the reflectance from the oxide semiconductor thin film after stopping the excitation light irradiation; and a second step of
calculating a parameter corresponding to slow decay observed after stopping the irradiation of the excitation light based on the temporal variation in the reflectivity, and
evaluating electrical resistivity of the oxide semiconductor thin film.

2 . The evaluation method according to claim 1 , wherein the electrical resistivity is one of sheet resistance and specific resistance.

3 . The evaluation method according to claim 1 , wherein, in the second step, the parameter corresponding to the slow decay observed at 0.1 to 10 μs after stopping irradiation of the excitation light is calculated based on the variation in reflectivity to evaluate the electrical resistivity of the oxide semiconductor thin film.

4 . The evaluation method according to claim 1 , wherein the oxide semiconductor thin film contains at least one element selected from the group consisting of In, Ga, Zn, and Sn.

5 . The evaluation method according to claim 1 , wherein the oxide semiconductor thin film is provided on a surface of a gate insulating film.

6 . The evaluation method according to claim 1 , wherein a passivation film is provided on a surface of the oxide semiconductor thin film.

7 . A method for controlling quality of an oxide semiconductor thin film, wherein the evaluation method according to claim 1 is applied to one of steps of a semiconductor manufacturing process.

8 . An evaluation element being used in the evaluation method according to claim 1 , and including an oxide semiconductor thin film provided on a substrate.

9 . The evaluation element according to claim 8 , wherein the oxide semiconductor thin film is directly provided on a surface of the substrate.

10 . The evaluation element according to claim 8 , wherein the oxide semiconductor thin film is directly provided on a surface of a gate insulating film.

11 . The evaluation element according to claim 8 , wherein a passivation film is provided on a surface of the oxide semiconductor thin film.

12 . An evaluation device, comprising a plurality of evaluation elements arranged on a substrate, each of the evaluation elements being the evaluation element according to claim 8 .

13 . A system used in the method for evaluating the oxide semiconductor thin film according to claim 1 , the system comprising:
an excitation light irradiation unit that irradiates excitation light to a measurement site of an oxide semiconductor thin film with to generate electron-hole pairs in the oxide semiconductor thin film; a microwave irradiation unit that irradiates a microwave to the measurement site with; a reflected microwave intensity detection unit that detects intensity of a reflected microwave from the oxide semiconductor thin film due to reflection of the microwave, the intensity being varied by the excitation light irradiation; and an unit for evaluating electrical resistivity of the oxide semiconductor thin film based on detection data of the reflected microwave intensity detection unit.

14 . The system for evaluating the oxide semiconductor thin film according to claim 13 , further comprising an electrical resistance measurement unit having an electrical resistivity measurement head and an up-and-down unit for the electrical resistivity measurement head.

15 . The evaluation method according to claim 2 , wherein, in the second step, the parameter corresponding to the slow decay observed at 0.1 to 10 μs after stopping irradiation of the excitation light is calculated based on the variation in reflectivity to evaluate the electrical resistivity of the oxide semiconductor thin film.

16 . The evaluation method according to claim 2 , wherein the oxide semiconductor thin film contains at least one element selected from the group consisting of In, Ga, Zn, and Sn.

17 . A method for controlling quality of an oxide semiconductor thin film, wherein the evaluation method according to claim 2 is applied to one of steps of a semiconductor manufacturing process.

18 . The evaluation element according to claim 9 , wherein a passivation film is provided on a surface of the oxide semiconductor thin film.

19 . An evaluation device, comprising a plurality of evaluation elements arranged on a substrate, each of the evaluation elements being the evaluation element according to claim 9 .

20 . A system used in the method for evaluating the oxide semiconductor thin film according to claim 2 , the system comprising:
an excitation light irradiation unit that irradiates excitation light to a measurement site of an oxide semiconductor thin film with to generate electron-hole pairs in the oxide semiconductor thin film; a microwave irradiation unit that irradiates a microwave to the measurement site with; a reflected microwave intensity detection unit that detects intensity of a reflected microwave from the oxide semiconductor thin film due to reflection of the microwave, the intensity being varied by the excitation light irradiation; and an unit for evaluating electrical resistivity of the oxide semiconductor thin film based on detection data of the reflected microwave intensity detection unit.

Assignees

• Kk Kobe Seiko Sho(Kobe Steel Ltd )
• Kobe Steel Ltd

Inventors

• Hayashi Kazushi
• Miki Aya
• Kugimiya Toshihiro
• Kawakami Nobuyuki

Classifications

• H10P74/207

  Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics · CPC title

• H10P74/203 Primary

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• G01N21/63

  optically excited · CPC title

• G01N22/00 Primary

  Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more (G01N3/00 - G01N17/00, G01N24/00 take precedence) · CPC title

• G01N27/04

  by investigating resistance · CPC title