Evaluation device for oxide semiconductor thin film

Patent metadata

Field	Value
Publication number	US-2016223462-A1
Application number	US-201414917452-A
Country	US
Kind code	A1
Filing date	Sep 10, 2014
Priority date	Sep 13, 2013
Publication date	Aug 4, 2016
Grant date	—

Abstract

An evaluation device for an oxide semiconductor thin film includes a first excitation light irradiation unit configured to irradiate a measurement region of a sample with first excitation light and to generate an electron-hole pair, an electromagnetic wave irradiation unit configured to irradiate with electromagnetic wave, a reflecting electromagnetic wave intensity detection unit configured to detect intensity of a reflected electromagnetic wave, a second excitation light irradiation unit configured to irradiate the sample with second excitation light and to generate photoluminescence light, an emission intensity measurement unit configured to measure emission intensity of the photoluminescence light, and an evaluation unit configured to evaluate mobility and stress stability. The first excitation light irradiation unit and the second excitation light irradiation unit are the same or different excitation light radiation units.

First claim

1 . An evaluation device for an oxide semiconductor thin film, comprising:
a first excitation light irradiation unit configured to irradiate a measurement region of a sample wherein an oxide semiconductor thin film is formed with first excitation light and to generate an electron-hole pair in the oxide semiconductor thin film; an electromagnetic wave irradiation unit configured to irradiate the measurement region of the sample with electromagnetic wave; a reflecting electromagnetic wave intensity detection unit configured to detect intensity of the electromagnetic wave being reflected from the sample and being varied by way of the irradiation with the first excitation light; a second excitation light irradiation unit configured to irradiate the sample with second excitation light and to generate photoluminescence light in the oxide semiconductor thin film; an emission intensity measurement unit configured to measure emission intensity of the photoluminescence light; and an evaluation unit configured to evaluate mobility and stress stability of the sample according to data detected by the reflecting electromagnetic wave intensity detection unit and data measured by the emission intensity measurement unit, wherein the first excitation light irradiation unit and the second excitation light irradiation unit are the same or different excitation light radiation units.

2 . The evaluation device for an oxide semiconductor thin film according to claim 1 , wherein the first excitation light irradiation unit comprises a light source that outputs energy equal to or more than a bandgap of the oxide semiconductor thin film.

3 . The evaluation device for an oxide semiconductor thin film according to claim 1 , wherein the second excitation light irradiation unit comprises a light source that outputs energy equivalent to a defect state present in the bandgap of the oxide semiconductor thin film.

4 . The evaluation device for an oxide semiconductor thin film according to claim 2 , wherein the second excitation light irradiation unit comprises a light source that outputs energy equivalent to a defect state present in the bandgap of the oxide semiconductor thin film.

5 . The evaluation device for an oxide semiconductor thin film according to claim 3 , wherein the second excitation light irradiation unit comprises a light source that outputs energy to excite only photoluminescence light having a predetermined wavelength in the oxide semiconductor thin film.

6 . The evaluation device for an oxide semiconductor thin film according to claim 4 , wherein the second excitation light irradiation unit comprises a light source that outputs energy to excite only photoluminescence light having a predetermined wavelength in the oxide semiconductor thin film.

7 . The evaluation device for an oxide semiconductor thin film according to claim 1 , comprising an optical path switching unit configured to switch one or both optical paths of the first and the second excitation lights, being arranged on the optical path of the first excitation light and the second excitation light.

8 . The evaluation device for an oxide semiconductor thin film according to claim 7 , wherein the optical path switching unit is disposed so that an identical or different measurement regions of the sample are irradiated with the first and the second excitation lights.

9 . The evaluation device for an oxide semiconductor thin film according to claim 1 , comprising:
a waveguide configured to guide the first excitation light and the electromagnetic wave to the measurement region of the sample, and an inlet port for the second excitation light disposed on a side face of the waveguide at the vicinity of an opening of the waveguide toward the sample.

Assignees

• Kobe Steel Ltd

Inventors

• Hayashi Kazushi
• Kishi Tomoya

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• G01N2201/06113

  Coherent sources; lasers · CPC title

• G01N22/00

  Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more (G01N3/00 - G01N17/00, G01N24/00 take precedence) · CPC title

• G01N21/6489 Primary

  Photoluminescence of semiconductors · CPC title

• G01N2201/0697

  Pulsed lasers · CPC title