Solid-state imaging device with channel stop region with multiple impurity regions in depth direction and method for manufacturing the same
US-9799691-B2 · Oct 24, 2017 · US
Imaging device and electronic apparatus
US10453892B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10453892-B2 |
| Application number | US-201715811275-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 13, 2017 |
| Priority date | Jan 21, 2014 |
| Publication date | Oct 22, 2019 |
| Grant date | Oct 22, 2019 |
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Abstract
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There is provided an imaging device that includes photovoltaic type pixels that have photoelectric conversion regions generating photovoltaic power for each pixel depending on irradiation light; and an element isolation region that is provided between the photoelectric conversion regions of adjacent pixels and in a state of substantially surrounding the photoelectric conversion region.
First claim
Opening claim text (preview).
What is claimed is: 1. An imaging device comprising: a first pixel that is a photovoltaic type pixel having a first photoelectric conversion region; a second pixel that is an accumulation type pixel having a second photoelectric conversion region and that is adjacent to the first pixel; and an isolation region that is provided between the first photoelectric conversion region and the second photoelectric conversion region. 2. The imaging device according to claim 1 , wherein the isolation region is configured of a material that blocks diffusion of a signal charge of the first pixel to the second pixel. 3. The imaging device according to claim 1 , wherein the first photoelectric conversion region has a PN junction diode. 4. The imaging device according to claim 3 , wherein the first pixel further includes a transfer gate and floating diffusion. 5. The imaging device according to claim 1 , further comprising: a third pixel that is an accumulation type pixel and that is adjacent to the first pixel and the second pixel. 6. The imaging device according to claim 1 , wherein a portion between the first photoelectric conversion region and a pixel circuit region is insulated. 7. An electronic apparatus, comprising: an imaging device including: a first pixel that is a photovoltaic type pixel having a first photoelectric conversion region; a second pixel that is an accumulation type pixel having a second photoelectric conversion region and that is adjacent to the first pixel; and an isolation region that is provided between the first photoelectric conversion region and the second photoelectric conversion region. 8. The electronic apparatus according to claim 7 , wherein the isolation region is configured of a material that blocks diffusion of a signal charge of the first pixel to the second pixel. 9. The electronic apparatus according to claim 7 , wherein the isolation region is configured of a material that blocks diffusion of a signal charge of the photovoltaic type pixels to the adjacent pixel. 10. The electronic apparatus according to claim 7 , wherein the first photoelectric conversion region has a PN junction diode. 11. The electronic apparatus according to claim 7 , wherein the first pixel further includes a transfer gate and floating diffusion. 12. The electronic apparatus according to claim 7 , further comprising: a third pixel that is an accumulation type pixel and that is adjacent to the first pixel and the second pixel. 13. The electronic apparatus according to claim 7 , wherein a portion between the first photoelectric conversion region and a pixel circuit region is insulated.
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US10453892B2 cover?
- There is provided an imaging device that includes photovoltaic type pixels that have photoelectric conversion regions generating photovoltaic power for each pixel depending on irradiation light; and an element isolation region that is provided between the photoelectric conversion regions of adjacent pixels and in a state of substantially surrounding the photoelectric conversion region.
- Who is the assignee on this patent?
- Sony Corp, Sony Semiconductor Solutions Corp
- What technology area does this patent fall under?
- Primary CPC classification H01L27/14887. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 22 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).