Charged particle beam device, charged particle beam influencing device, and method of operating a charged particle beam device

Patent metadata

Field	Value
Publication number	US-10249472-B2
Application number	US-201715648931-A
Country	US
Kind code	B2
Filing date	Jul 13, 2017
Priority date	Jul 13, 2017
Publication date	Apr 2, 2019
Grant date	Apr 2, 2019

Abstract

A charged particle beam device is described, which includes: a beam source configured to generate a charged particle beam propagating along an optical axis (A); an aperture device with a first number of apertures configured to create a first number of beamlets from the charged particle beam, wherein the first number is five or more, wherein the apertures are arranged on a ring line around the optical axis (A) such that perpendiculars of the apertures onto a tangent of the ring line are evenly spaced. The charged particle beam device further includes an electrostatic multipole device configured to individually influence the beamlets. Further, a charged particle beam influencing device and a method of operating a charged particle beam device are described.

First claim

The invention claimed is:

1. A charged particle beam device, comprising:
a beam source configured to generate a charged particle beam propagating along an optical axis (A);
an aperture device with a first number of apertures configured to create a first number of beamlets from the charged particle beam, wherein the first number is five or more, and wherein the apertures are arranged on a ring line around the optical axis (A) such that perpendiculars of the apertures onto a tangent of the ring line are evenly spaced; and
an electrostatic multipole device configured to individually influence the beamlets, wherein the aperture device comprises a substrate on which electrostatic multipoles of the electrostatic multipole device are formed, and the electrostatic multipoles comprise four, six, eight, or more electrodes.

2. The charged particle beam device of claim 1 , wherein the electrostatic multipoles are configured to individually influence the first number of beamlets.

3. The charged particle beam device of claim 1 , wherein the electrostatic multipole device comprises a plurality of quadrupoles or octupoles.

4. The charged particle beam device of claim 1 , wherein the four, six, eight or more electrodes of the electrostatic multipoles are arranged downstream from an associated aperture at evenly spaced angular positions with respect to a center of the associated aperture, respectively.

5. The charged particle beam device of claim 1 , wherein a distance between two adjacent perpendiculars essentially corresponds to a diameter of the ring line divided by the first number minus 1.

6. The charged particle beam device of claim 1 , further comprising:
a scanning device configured for scanning the beamlets over a specimen along evenly spaced scan lines in a first scan direction.

7. The charged particle beam device of claim 6 , wherein the scanning device is configured to raster-scan the beamlets over the specimen by alternately scanning in the first scan direction along the evenly spaced scan lines and moving the beamlets in a second transversal scan direction.

8. The charged particle beam device of claim 1 , wherein the electrostatic multipole device is configured to deflect the beamlets such that each of the beamlets appears to come from a different source.

9. The charged particle beam device of claim 8 , wherein the electrostatic multipole device comprises an individual deflector for each of the beamlets.

10. The charged particle beam device of claim 9 , wherein the individual deflector comprises an electrostatic multipole, particularly selected from the group consisting of an electrostatic quadrupole, hexapole and octupole.

11. The charged particle beam device of claim 1 , further comprising:
an objective lens configured to focus the beamlets onto a specimen; and
a detector device configured to detect secondary charged particles and/or backscattered charged particles emitted from the specimen.

12. The charged particle beam device of claim 11 , wherein the objective lens is a combined magnetic-electrostatic objective lens including a magnetic lens portion and an electrostatic lens portion.

13. A charged particle beam influencing device, comprising:
an aperture device with a first number of apertures configured to create a first number of beamlets from a charged particle beam propagating along an optical axis (A), wherein the first number is five or more, wherein the apertures are arranged on a ring line around the optical axis (A) such that perpendiculars of the apertures onto a tangent of the ring line are evenly spaced; and
an electrostatic multipole device integrated with the aperture device and configured for individually influencing the beamlets, wherein the aperture device comprises a substrate on which electrostatic multipoles of the electrostatic multipole device are formed, and the electrostatic multipoles comprise four, six, eight, or more electrodes.

14. A method of operating a charged particle beam device, comprising:
generating a charged particle beam propagating along an optical axis (A);
directing the charged particle beam through a first number of apertures of an aperture device arranged on a ring line around the optical axis to create a first number of beamlets, wherein the first number is five or more;
individually influencing the beamlets with electrostatic multipoles of an electrostatic multipole device, wherein the aperture device comprises a substrate on which the electrostatic multipoles are formed, and the electrostatic multipoles comprise four, six, eight, or more electrodes; and
moving the beamlets relative to a specimen in a first scan direction (X) along evenly spaced scan lines.

15. The method of claim 14 , further comprising detecting secondary and/or backscattered charged particles emitted by the specimen.

16. The method of claim 14 , wherein the secondary and/or backscattered charged particles generated by the beamlets are detected by respective detector segments of a detector device.

17. The method of claim 14 , comprising: raster-scanning the specimen by moving the beamlets over the specimen in the first scan direction (X) and in a second scan direction perpendicular to the first scan direction.

18. The method of claim 14 , wherein individually influencing the beamlets comprises at least one of individually deflecting, focusing and correcting the beamlets.

Assignees

• Ict Integrated Circuit Testing Ges Fuer Halbleiterprueftechnik Mbh

Inventors

• Winkler Dieter
• Eytan Guy
• Nir Zvi

Classifications

• H01J37/244

  Detectors; Associated components or circuits therefor · CPC title

• H01J37/21

  Means for adjusting the focus · CPC title

• H01J37/1477 Primary

  electrostatic · CPC title

• H01J2237/0453

  multiple apertures · CPC title

• H01J2237/2448

  Secondary particle detectors · CPC title