Ion implantation apparatus with ion beam directing unit

Patent metadata

Field	Value
Publication number	US-9809877-B2
Application number	US-201615189209-A
Country	US
Kind code	B2
Filing date	Jun 22, 2016
Priority date	Feb 11, 2014
Publication date	Nov 7, 2017
Grant date	Nov 7, 2017

Abstract

An ion implantation apparatus includes an ion beam directing unit, a substrate support, and a controller. The controller is configured to effect a relative movement between an ion beam passing the ion beam directing unit and the substrate support. A beam track of the ion beam on a substrate mounted on the substrate support includes circles or a spiral.

First claim

What is claimed is:

1. An ion implantation apparatus, comprising:
an ion beam directing unit;
a substrate support;
a controller configured to effect a relative movement between an ion beam passing the ion beam directing unit and the substrate support, wherein a beam track of the ion beam on a substrate mounted on the substrate support includes circles or a spiral in a plane; and
a controllable motor drive unit configured to rotate the substrate support in a plane slanted by at most 10 degree with respect to a plane perpendicular to the ion beam.

2. The ion implantation apparatus of claim 1 , wherein
the controller is configured to control a rotational speed of the substrate support.

3. The ion implantation apparatus of claim 2 , wherein
the ion beam directing unit comprises an electrostatic deflection unit configured to deflect the ion beam along a first direction.

4. The ion implantation apparatus of claim 3 , wherein
a track of the ion beam intersects a rotational axis of the substrate support.

5. An ion implantation apparatus, comprising:
an ion beam directing unit;
a substrate support; and
a controller configured to effect a relative movement between an ion beam passing the ion beam directing unit and the substrate support, wherein a beam track of the ion beam on a substrate mounted on the substrate support includes circles or a spiral in a plane, and configured to at least one of radially modifying a distance between successive beam tracks and radially modifying a rotational speed of the ion beam track to obtain a rotational-symmetric implant dose with radially varying implant dose.

Assignees

• Infineon Technologies Ag

Inventors

• Breymesser Alexander
• Voss Stephan
• Schulze Hans-Joachim
• Schustereder Werner

Classifications

• H10P72/7618

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P30/20

  into semiconductor materials, e.g. for doping · CPC title

• H10D8/00

  Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) · CPC title

• H01J37/1477 Primary

  electrostatic · CPC title

• H01L29/0657

  Electricity · mapped topic