Solid-state imaging device, drive method thereof and electronic apparatus

Patent metadata

Field	Value
Publication number	US-10199427-B2
Application number	US-201314082832-A
Country	US
Kind code	B2
Filing date	Nov 18, 2013
Priority date	Jun 9, 2008
Publication date	Feb 5, 2019
Grant date	Feb 5, 2019

Abstract

A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

First claim

What is claimed is:

1. A solid-state imaging device comprising:
a plurality of photodiodes located at different depths in unit pixel areas of a substrate, the substrate having two oppositely facing faces, wherein at least a first photodiode and a second photodiode of the plurality of photodiodes are located at the different depths in a first unit pixel area;
a vertical transistor, the vertical transistor extending in a vertical direction from a first face of the substrate;
a gate electrode of the vertical transistor, wherein the gate electrode extends vertically to a depth corresponding to a depth of a deepest one of the photodiodes of the first unit pixel area, and wherein the gate electrode extends through depths corresponding to each of the photodiodes of the first unit pixel area;
a contiguous overflow path extending vertically and in contact with the first photodiode and the second photodiode of the first unit pixel area; and
a floating diffusion region at a surface of the first face of the substrate, wherein the floating diffusion region is shared by at least two photodiodes in the plurality of photodiodes located at different depths in the first unit pixel area of the substrate.

2. The solid-state imaging device of claim 1 , wherein the plurality of photodiodes consist of alternating layers of at least one first-conductive semiconductor layer and at least one second-conductive type semiconductor layer.

3. The solid-state imaging device of claim 1 , wherein an upper portion of the gate electrode protrudes from the first face of the substrate.

4. The solid-state imaging device of claim 3 , wherein the floating diffusion region is formed adjacent the upper portion of the gate electrode.

5. The solid-state imaging device of claim 1 , wherein the vertical transistor is a transfer transistor.

6. The solid-state imaging device of claim 5 , wherein the transfer transistor is formed adjacent an end of the photodiodes.

7. The solid-state imaging device of claim 1 , wherein the device is a back-illuminated type device.

8. A method for driving a solid-state imaging device, comprising:
forming a solid-state imaging device including a plurality of photodiodes located at different depths in unit pixel areas of a substrate, the substrate having two oppositely facing faces, wherein at least a first photodiode and a second photodiode of the plurality of photodiodes are located at the different depths in a first unit pixel area;
forming a vertical transistor from a first face of the substrate so that a gate electrode portion for reading signal charges obtained by photoelectric conversion in the plurality of photodiodes extends to depths corresponding to each of the photodiodes;
forming a contiguous overflow path in contact with the first photodiode and the second photodiode of the first unit pixel area;
forming a floating diffusion region at a surface of the first face of the substrate, wherein the floating diffusion region is shared by at least two photodiodes in the plurality of photodiodes located at different depths in the first unit pixel area; and
reading signal charges accumulated in the first photodiode and the second photodiode,
wherein the first photodiode is saturated by a saturation charge amount, and
wherein charges exceeding the saturation charge amount are passed to another one of the photodiodes in the first unit pixel area by the overflow path.

9. The method for driving the solid-state imaging device of claim 8 , wherein signal charges accumulated in any of the plurality of photodiodes are read out by the vertical transistor.

10. The method for driving the solid-state imaging device of claim 9 , wherein each of the signal charges accumulated in the plurality of photodiodes is read at the same time.

11. The method for driving the solid-state imaging device of claim 9 , wherein the signal charges are moved to the floating diffusion region.

12. An electronic apparatus, comprising:
an optical lens system;
a solid-state imaging device including a plurality of photodiodes located at different depths in unit pixel areas of a substrate, the substrate having two oppositely facing faces, wherein at least a first photodiode and a second photodiode of the plurality of photodiodes are located at the different depths in a first unit pixel area, and wherein the optical lens system directs incident light to the solid-state imaging device;
a vertical transistor, the vertical transistor extending in a vertical direction from a first face of the substrate;
a gate electrode of the vertical transistor, wherein the gate electrode extends vertically to a depth corresponding to a depth of a deepest one to the photodiodes of the first unit pixel area, and wherein the gate electrode extends through depths corresponding to each of the photodiodes of the first unit pixel area;
a floating diffusion region on a surface of the first face of the substrate, wherein the floating diffusion region is shared by at least two photodiodes in the plurality of photodiodes located at different depths in the first unit pixel area;
a contiguous overflow path extending vertically and in contact with the first photodiode and the second photodiode of the first unit pixel area; and
a signal processing device which processes output signals from the solid-state imaging device.

13. The electronic apparatus of claim 12 , wherein the plurality of photodiodes consist of alternating layers of at least one first-conductive semiconductor layer and at least one second-conductive type semiconductor layer.

14. The electronic apparatus of claim 12 , wherein an upper portion of the gate electrode protrudes from the first face of the substrate.

15. The electronic apparatus of claim 14 , wherein the floating diffusion region is formed adjacent the upper portion of the gate electrode.

16. The electronic apparatus of claim 12 , wherein the vertical transistor is a transfer transistor.

17. The electronic apparatus of claim 16 , wherein the transfer transistor is formed at an end of the photodiodes.

18. The electronic apparatus of claim 12 , wherein the device is a back-illuminated type device.

19. The electronic apparatus of claim 12 , further comprising:
a multi-level wiring formed on a surface of the substrate.

20. The electronic apparatus of claim 19 , further comprising:
a planarization film formed on a second face of the substrate opposite the first face on which the multi-level wiring is formed;
a color filter formed on the planarization film;
an on-chip lens formed on the color filter.

Assignees

• Sony Corp

Inventors

• Watanabe Taiichiro
• Yamada Akihiro
• Kido Hideo
• Saito Hiromasa
• Mabuchi Keiji
• Ohgishi Yuko

Classifications

• H01L27/14647

  Electricity · mapped topic

• H01L27/14603

  Electricity · mapped topic

• H01L27/14656

  Electricity · mapped topic

• H01L27/14625

  Electricity · mapped topic

• H01L27/14887 Primary

  Electricity · mapped topic