Method for providing a planarizable workpiece support, a workpiece planarization arrangement, and a chuck

Patent metadata

Field	Value
Publication number	US-10199255-B2
Application number	US-201715446059-A
Country	US
Kind code	B2
Filing date	Mar 1, 2017
Priority date	Mar 10, 2016
Publication date	Feb 5, 2019
Grant date	Feb 5, 2019

Abstract

According to various embodiments, a workpiece planarization arrangement may include: a chuck including at least one portion configured to support one or more workpieces; and a planarization tool configured to planarize the at least one portion of the chuck and to planarize one or more workpieces on the at least one portion of the chuck; wherein the at least one portion of the chuck includes at least one of particles, pores and/or a polymer.

First claim

What is claimed is:

1. A semiconductor workpiece planarization arrangement, comprising:
a chuck comprising at least one portion configured to support one or more semiconductor workpieces; and
a planarization tool configured to planarize the at least one portion of the chuck and to planarize one or more semiconductor workpieces on the at least one portion of the chuck;
wherein the at least one portion of the chuck comprises at least one of granular particles, pores and/or a polymer.

2. The semiconductor workpiece planarization arrangement of claim 1 , the planarization tool comprising:
a machining bit configured to revolve about a rotation axis;
wherein the planarization tool and the chuck are configured displaceable to each other parallel to a direction perpendicular to the rotation axis.

3. The semiconductor workpiece planarization arrangement of claim 1 ,
wherein a mechanical hardness of the at least one portion of the chuck is configured such that planarizing the one or more semiconductor workpieces and planarizing the at least one portion of the chuck use the planarization tool in the same machining bit configuration.

4. The semiconductor workpiece planarization arrangement of claim 1 ,
wherein the chuck comprises at least one vacuum line for connecting to a vacuum creating system; and
wherein the at least one portion of the chuck comprises at least one through hole connected to the at least one vacuum line.

5. The semiconductor workpiece planarization arrangement of claim 1 ,
wherein the chuck comprises a plurality of vacuum lines;
wherein the at least one portion of the chuck comprises a plurality of adhesion regions separated from each other, wherein each adhesion region of the plurality of adhesion regions comprises at least one through hole;
wherein the at least one through hole of each adhesion region of the plurality of adhesion regions is connected to at least one vacuum line of the plurality of vacuum lines.

6. The semiconductor workpiece planarization arrangement of claim 1 ,
wherein the at least one portion of the chuck is proximate to a side of the chuck configured to support one or more semiconductor workpieces;
wherein the chuck comprises at least one further portion distant from the side; and
wherein a mechanical hardness of the at least one further portion of the chuck is greater than a mechanical hardness of the at least one portion of the chuck.

7. The semiconductor workpiece planarization arrangement of claim 6 ,
wherein the at least one further portion comprises a metallic material and/or a ceramic material.

8. The semiconductor workpiece planarization arrangement of claim 6 ,
wherein a thermal expansion coefficient of the at least one further portion is less than 1·10 −5 /K.

9. The semiconductor workpiece planarization arrangement of claim 1 ,
wherein the granular particles include the polymer or a metal.

10. The semiconductor workpiece planarization arrangement of claim 1 ,
wherein the at least one portion comprises at least one of
at least one foil comprising the polymer,
at least one layer comprising the pores and/or the particles; and
a composite material comprising the polymer and the particles embedded in the polymer.

11. The semiconductor workpiece planarization arrangement of claim 1 ,
wherein the at least one portion comprises one or more protrusions and at least one layer, wherein the at least one layer comprises at least one of the polymer, the pores and the particles,
wherein the at least one layer covers the one or more protrusions.

12. A semiconductor workpiece planarization arrangement, comprising:
a chuck comprising at least one portion configured to support one or more semiconductor workpieces; and
a planarization tool configured to planarize the at least one portion of the chuck and to planarize one or more semiconductor workpieces on the at least one portion of the chuck;
wherein the at least one portion of the chuck comprises at least one of granular particles, pores and/or a polymer;
wherein a mechanical hardness of the at least one portion of the chuck is configured such that planarizing the one or more semiconductor workpieces and planarizing the at least one portion of the chuck use the planarization tool in the same machining bit configuration.

13. A chuck, comprising:
a first side configured to be mounted to a chuck holder;
a second side opposite the first side, wherein the second side is configured to support one or more semiconductor workpieces;
at least one vacuum line for connecting to a vacuum creating system; and
at least one portion proximate to the second side comprising at least one through hole connected to the at least one vacuum line such that one or more semiconductor workpieces received over the second side is adhered by suction when a vacuum is created via the at least one vacuum line;
wherein the at least one portion proximate to the second side comprises at least one of granular particles, pores and/or a polymer.

14. The chuck of claim 13 ,
wherein the at least one portion is distant from the first side;
wherein the chuck comprises at least one further portion proximate to the first side; and
wherein a mechanical hardness of the at least one further portion is greater than the mechanical hardness of the at least one portion.

15. The chuck of claim 14 ,
wherein the at least one further portion comprises a metallic material and/or a ceramic material.

16. The chuck of claim 14 ,
wherein a thermal expansion coefficient of the at least one further portion is less than 1·10 −5 /K.

17. The chuck of claim 13 ,
wherein the at least one portion comprises at least one of
at least one foil comprising the polymer,
at least one layer comprising the pores and/or the particles, and
a composite material comprising the polymer and the particles embedded in the polymer.

18. The chuck of claim 13 , wherein the at least one portion comprises one or more protrusions and at least one layer, wherein the at least one layer comprises at least one of the polymer, the pores and the particles,
wherein the at least one layer covers the one or more protrusions.

19. A method for providing a planarizable workpiece support, the method comprising:
providing a chuck, comprising a first side configured to be mounted to a chuck holder; a second side opposite the first side, and at least one vacuum line for connecting to a vacuum creating system, wherein the second side is configured to support one or more workpieces; and
forming or reinforcing at least one portion proximate to the second side, the at least one portion comprising at least one through hole connected to the at least one vacuum line such that one or more semiconductor workpieces received over the second side are adhered by suction when a vacuum is created via the at least one vacuum line;
wherein forming or reinforcing comprises exposing the second side to an aerosol or at least one of molding, pressing or laminating a material on the second side.

20. The method of claim 19 , further comprising:
planarizing the at least one portion of a chuck using a planarization tool;
disposing one or more semiconductor workpieces over the at least one portion of the chuck after the planarizing the at least one portion of the chuck; and
planarizing the one or more semiconductor workpieces using the planarization tool.

Assignees

• Infineon Technologies Ag
• Infineon Technologies Ag

Inventors

• Muri Ingo
• Binter Alexander
• Goller Bernhard
• Grindling Christian

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title

• H10P72/7614

  characterised by a plurality of individual support members, e.g. support posts or protrusions · CPC title

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P72/78 Primary

  using vacuum or suction, e.g. Bernoulli chucks · CPC title