Plating method, plating system and storage medium

Patent metadata

Field	Value
Publication number	US-10030308-B2
Application number	US-201314384495-A
Country	US
Kind code	B2
Filing date	Feb 22, 2013
Priority date	Mar 22, 2012
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

A plating method can improve adhesivity with an underlying layer. The plating method of performing a plating process on a substrate includes forming a first plating layer 23a serving as a barrier film on a substrate 2; baking the first plating layer 23a; forming a second plating layer 23b serving as a barrier film; and baking the second plating layer 23b. A plating layer stacked body 23 serving as a barrier film is formed of the first plating layer 23a and the second plating layer 23b.

First claim

We claim:

1. A plating method of performing a plating process on a substrate, the plating method comprising:
a substrate preparing process of preparing the substrate;
an adhesion layer forming process of forming an adhesion layer by adsorbing a coupling agent onto the substrate;
a catalyst adsorption layer forming process of forming a catalyst adsorption layer by adsorbing a catalyst onto the adhesion layer; and
a diffusion barrier film forming process of forming a diffusion barrier film, as a plating layer stacked body, onto the catalyst adsorption layer;
wherein the diffusion barrier film forming process comprises:
a first plating layer forming process of forming a first plating layer on the catalyst adsorption layer by performing a plating process on the substrate;
a first plating layer baking process of baking the first plating layer by heating the substrate to enhance bond between metals within the first plating layer;
a second plating layer forming process of forming a second plating layer on the first plating layer by performing a plating process on the substrate; and
a second plating layer baking process of baking the second plating layer by heating the substrate to enhance bond between metals within the second plating layer,

wherein the first plating layer and the second plating layer form the plating layer stacked body, and the plating layer stacked body functions as the diffusion barrier film,
a thickness of the first plating layer is set to be smaller than a thickness of the second plating layer to enhance an adhesivity between the first and second plating layers and the catalyst adsorption layer, and
a baking temperature for the first plating layer is set to be higher than a baking temperature for the second plating layer, and a baking time for the first plating layer is set to be longer than a baking time for the second plating layer.

2. The plating method of claim 1 ,
wherein each of the plating layers of the plating layer stacked body functions as a Cu diffusion barrier film.

3. The plating method of claim 1 ,
wherein the first plating layer of the plating layer stacked body is formed on the catalyst adsorption layer, and the second plating layer of the plating layer stacked body is formed on the first plating layer through a autocatalytic plating.

4. The plating method of claim 1 ,
wherein a component of the plating liquid in the first plating layer forming process is the same as in the second plating layer forming process.

5. The plating method of claim 1 ,
wherein a component and a temperature of the plating liquid in the first plating layer forming process are different from those in the second plating layer forming process.

6. The plating method of claim 1 ,
wherein the plating layer baking process is performed under an inert-gas atmosphere or a vacuum.

Assignees

• Tokyo Electron Ltd

Inventors

• Tanaka Takashi
• Inatomi Yuichiro
• Mizutani Nobutaka
• Saito Yusuke
• Iwashita Mitsuaki

Classifications

• H10W20/0261

  characterised by the filling method or the material of the conductive fill · CPC title

• H10W20/0245

  comprising use of blind vias during the manufacture · CPC title

• H10P14/46

  using a liquid · CPC title

• H10W20/044

  for electroless plating · CPC title

• H10W20/033

  in openings in dielectrics · CPC title