High resistivity soft magnetic material for miniaturized power converter

Patent metadata

Field	Value
Publication number	US-10971576-B2
Application number	US-201715817858-A
Country	US
Kind code	B2
Filing date	Nov 20, 2017
Priority date	Mar 24, 2015
Publication date	Apr 6, 2021
Grant date	Apr 6, 2021

Abstract

An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

First claim

What is claimed is:

1. A method for forming an on-chip magnetic structure, the method comprising:
activating a magnetic seed layer with palladium, the magnetic seed layer comprising nickel being arranged directly on an adhesion layer arranged directly on a semiconductor substrate, the adhesion layer being a single layer;
adding a lead salt to a plating solution;
electrolessly plating, with the plating solution, a magnetic alloy onto the palladium to form a Pd/CoWP layer; and
annealing the substrate;
wherein the Pd/CoWP layer comprises cobalt in a range from about 80 to about 90 at. % based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

2. The method of claim 1 , wherein the magnetic seed layer further comprises iron.

3. The method of claim 1 , wherein the on-chip magnetic structure is an inductor.

4. The method of claim 1 , wherein the Pd/CoWP layer is amorphous.

5. The method of claim 1 , wherein the magnetic seed layer is at least 40 nm thick.

6. The method of claim 1 , wherein the Pd/CoWP layer is magnetically stable to at least 200° C. for at least 1 hour.

7. The method of claim 1 , wherein the cobalt is in a range from about 81 to about 86 at. %.

8. The method of claim 1 , wherein the lead salt is lead acetate, lead nitrate, or a combination thereof.

9. The method of claim 1 , wherein the lead salt is present in the plating solution in an amount in a range from about 0.01 to about 0.5 ppm.

10. The method of claim 1 , wherein the lead salt is present in the plating solution in an amount in a range from about 0.05 to about 10 ppm.

Assignees

• IBM

Inventors

• Deligianni Hariklia
• Gallagher William J
• Kellock Andrew J
• O'Sullivan Eugene J
• Romankiw Lubomyr T
• Wang Naigang

Classifications

• H10P14/47

  Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

• H10P14/46

  using a liquid · CPC title

• H10W20/497

  Inductive arrangements or effects of, or between, wiring layers · CPC title

• H10D1/20 Primary

  Inductors · CPC title

• C23C18/1673

  Magnetic field · CPC title