Process of forming a photoactive layer of an optoelectronic device

Patent metadata

Field	Value
Publication number	US-10157710-B2
Application number	US-201515537091-A
Country	US
Kind code	B2
Filing date	Dec 21, 2015
Priority date	Dec 19, 2014
Publication date	Dec 18, 2018
Grant date	Dec 18, 2018

Abstract

A process of forming a thin film photoactive layer of an optoelectronic device comprising: providing a substrate having a surface comprising or coated with a metal M selected from at least one of Pb, Sn, Ge, Si, Ti, Bi, or In; and converting the metal surface or metal coating of the substrate to a perovskite layer.

First claim

The invention claimed is:

1. A process of forming a thin film photoactive layer of an optoelectronic device comprising:
providing a substrate having a metallic surface comprising or coated with a metal M selected from at least one of Pb, Sn, Ge, Si, Ti, Bi, or In; and
converting the metallic surface of the substrate to a perovskite layer comprising an organo-metal halide perovskite, wherein the converting comprises:
applying onto the surface of the substrate at least one perovskite precursor comprising at least one compound having a formula AX, or at least one reaction constituent for forming at least one compound having the formula AX, to form the perovskite layer, wherein A comprises a nitrogen-containing organic cation and X is selected from at least one of F, Cl, Br or I.

2. A process according to claim 1 , further comprising, prior to the converting step, providing the substrate with a metallic coating comprising the metal M to form the metallic surface.

3. A process according to claim 2 , wherein the coating comprising metal M is provided by a process comprising at least one of:
a deposition method including at least one of electrodeposition, electrophoretic deposition, electroplating, or electroless deposition;
a physical coating method including at least one of sputter, cold spray; or application of solid film or layer to the substrate; or
an evaporative coating method.

4. A process according to claim 2 , wherein the metal coating comprising the metal M has a thickness between 25 and 200 nm.

5. A process according to claim 3 , wherein the coating comprising metal M is deposited on the substrate with a metal deposition rate of between 0.1 and 2 Angstrom/second.

6. A process according to claim 1 , wherein the converting step comprises:
contacting the metallic surface with a vapor X selected from a halide vapor comprising at least one of F, Cl, Br or I, or an acetic acid vapor, to form a coating comprising metal compound MX 2 on the substrate; and thereafter
applying at least one perovskite precursor to the substrate to form the perovskite layer.

7. A process according to claim 6 , wherein the metallic surface is contacted with a vapor X at between 50 and 200° C.

8. A process according to claim 1 , wherein the perovskite precursor comprises at least one perovskite precursor vapor and the converting step includes forming the perovskite layer by vapor deposition.

9. A process according to claim 8 , wherein the perovskite vapor deposition process comprises:
exposing the substrate to a perovskite precursor vapor comprising the perovskite precursor or one or more reactants for producing said perovskite precursor; and allowing deposition of the perovskite precursor vapor onto the metal compound MX 2 coating on the substrate, to produce the perovskite layer thereon.

10. A process according to claim 9 , wherein the perovskite vapor deposition is allowed to continue until a solid layer of perovskite is formed with a thickness of from 100 nm to 100 μm.

11. A process according to claim 1 , wherein the perovskite precursor is a perovskite precursor solution comprising at least one perovskite precursor dissolved in a coating solvent.

12. A process according to claim 1 , wherein A in the perovskite precursor AX comprises an organic cation having a formula R 1 R 2 R 3 R 4 N, wherein:
R 1 is hydrogen, unsubstituted or substituted C1-C20 alkyl, or unsubstituted or substituted aryl;
R 2 is hydrogen, unsubstituted or substituted C1-C20 alkyl, or unsubstituted or substituted aryl;
R 3 is hydrogen, unsubstituted or substituted C1-C20 alkyl, or unsubstituted or substituted aryl; and
R 4 is hydrogen, unsubstituted or substituted C1-C20 alkyl, or unsubstituted or substituted aryl.

13. A process according to claim 1 , wherein A in the perovskite precursor AX comprises an organic cation having a formula R 5 R 6 N═CH—NR 7 R 8 , and wherein:
R 5 is hydrogen, unsubstituted or substituted C1-C20 alkyl, or unsubstituted or substituted aryl;
R 6 is hydrogen, unsubstituted or substituted C1-C20 alkyl, or unsubstituted or substituted aryl;
R 7 is hydrogen, unsubstituted or substituted C1-C20 alkyl, or unsubstituted or substituted aryl; and
R 8 is hydrogen, unsubstituted or substituted C1-C20 alkyl, or unsubstituted or substituted aryl.

14. A process according to claim 1 , wherein the perovskite layer comprises at least one of CH 3 NH 3 MX 3 or HC(NH 2 ) 2 MX 3 , in which, M is selected from Pb, Sn, Tl, Bi, or In; and X is selected from at least one of F, Cl, Br or I.

15. A process according to claim 1 , wherein the perovskite layer comprises at least one of CH 3 NH 3 PbX 3 or HC(NH 2 ) 2 PbX 3 , in which X is selected from at least one of F, Cl, Br or I.

16. A process according to claim 1 , wherein the perovskite layer comprises CH 3 NH 3 MCl x I 3-x , in which M is selected from at least one of Pb, Sn, Ge, Si, Ti, Bi, or In, preferably M is Pb.

17. A process according to claim 1 , wherein the nitrogen containing organic cation comprises an ammonium group.

Assignees

• Commw Scient Ind Res Org

Inventors

• Jones Timothy William
• Wilson Gregory Joseph
• Anderson Kenrick Forrest
• Hollenkamp Anthony Frank
• Duffy Noel William
• Firet Nienke Joan

Classifications

• C23C14/5846

  Reactive treatment · CPC title

• C23C18/31

  Coating with metals · CPC title

• C25D5/48

  After-treatment of electroplated surfaces · CPC title

• C25D3/34

  of lead · CPC title

• C23C18/1694

  Sequential heat treatment · CPC title