High resistivity soft magnetic material for miniaturized power converter

Patent metadata

Field	Value
Publication number	US-9865673-B2
Application number	US-201514666624-A
Country	US
Kind code	B2
Filing date	Mar 24, 2015
Priority date	Mar 24, 2015
Publication date	Jan 9, 2018
Grant date	Jan 9, 2018

Abstract

An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

First claim

What is claimed is:

1. An on-chip magnetic structure, comprising:
an activated metallic seed layer comprising NiFe arranged directly on a silicon substrate, the activated metallic seed layer having a dissolved portion comprising palladium nanoparticles that has a thickness of about 10 to about 20 nanometers (nm), and the activated seed layer having an overall thickness of about 10 to about 200 nm;
a magnetic material disposed onto the layer of nanoparticles, the magnetic material consisting essentially of palladium, cobalt, tungsten, and phosphorus, with cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material;
wherein the magnetic material has a thickness in a range from about 1 to about 2 microns.

2. The on-chip magnetic structure of claim 1 , wherein the magnetic material is substantially amorphous.

3. The on-chip magnetic structure of claim 1 , wherein the resistivity of the magnetic material is at least 100 micro-ohm·centimeters (μΩ·cm).

4. The on-chip magnetic structure of claim 1 , wherein the activated metallic seed layer further comprises cobalt, palladium, copper, titanium, or any combination thereof.

5. The on-chip magnetic structure of claim 1 , wherein the phosphorous is in a range from about 9 to about 11 at. %.

6. The on-chip magnetic structure of claim 1 , wherein the on-chip magnetic structure is a yoke or a coil.

Assignees

• IBM

Inventors

• Deligianni Hariklia
• Gallagher William J
• Kellock Andrew J
• O'Sullivan Eugene J
• Romankiw Lubomyr T
• Wang Naigang

Classifications

• H10P14/47

  Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

• H10P14/46

  using a liquid · CPC title

• H10W20/497

  Inductive arrangements or effects of, or between, wiring layers · CPC title

• C23C18/16

  by reduction or substitution, e.g. electroless plating (C23C18/54 takes precedence) · CPC title

• H01L28/10 Primary

  Electricity · mapped topic