Susceptor for processing substrates
US-2026095982-A1 · Apr 2, 2026 · US
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Yoshikawa Jun patents
Yoshikawa Jun is listed as an inventor on 133 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Yoshikawa Jun |
| Total patents | 133 |
| First publication | Jan 15, 2015 |
| Latest publication | Apr 2, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Composite substrate, method for producing composite substrate, and method for producing gallium oxide crystal film
US-12559855-B2 · Feb 24, 2026 · US
Multilayer structure
US-12563795-B2 · Feb 24, 2026 · US
SiC SUBSTRATE AND SiC COMPOSITE SUBSTRATE
US-2026043171-A1 · Feb 12, 2026 · US
Information processing device, information processing method, program, and display system
US-12470679-B2 · Nov 11, 2025 · US
Working system
US-2025306587-A1 · Oct 2, 2025 · US
Working system
US-2025306585-A1 · Oct 2, 2025 · US
SiC composite substrate and composite substrate for semiconductor device
US-12431440-B2 · Sep 30, 2025 · US
Rare earth-containing SiC substrate and method for producing SiC epitaxial layer
US-12424440-B2 · Sep 23, 2025 · US
Underlying substrate
US-12421621-B2 · Sep 23, 2025 · US
Recent patents
Latest publications not already listed above.
α-Ga2O3 semiconductor film
US-12406845-B2 · Sep 2, 2025 · US
Hybrid dual frequency plasma method and apparatus for deposition in patterned features on a substrate
US-2025273431-A1 · Aug 28, 2025 · US
Semiconductor film
US-12351906-B2 · Jul 8, 2025 · US
Ground substrate and method for producing same
US-12351941-B2 · Jul 8, 2025 · US
Sic substrate and sic composite substrate
US-2025126865-A1 · Apr 17, 2025 · US
Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US-12272548-B2 · Apr 8, 2025 · US
SiC composite substrate and composite substrate for semiconductor device
US-12183792-B2 · Dec 31, 2024 · US
Ground substrate and method for producing same
US-12163249-B2 · Dec 10, 2024 · US
Method for producing an α- or β-gallium oxide crystal by bring an aqueous solution including Ga ions into a supercritical state
US-12163252-B2 · Dec 10, 2024 · US
Semiconductor film
US-12159907-B2 · Dec 3, 2024 · US
Biaxially oriented SiC composite substrate and semiconductor device composite substrate
US-12125883-B2 · Oct 22, 2024 · US
Temperature controlled reaction chamber
US-12125684-B2 · Oct 22, 2024 · US
Information processing device, information processing method, program, and display system
US-2024314279-A1 · Sep 19, 2024 · US
SiC composite substrate including biaxially oreinted SiC layer and semiconductor device
US-12080551-B2 · Sep 3, 2024 · US
Oriented ceramic sintered body production method and flat sheet
US-12065383-B2 · Aug 20, 2024 · US
RARE EARTH-CONTAINING SiC SUBSTRATE AND SiC COMPOSITE SUBSTRATE
US-2024250127-A1 · Jul 25, 2024 · US
Gallium oxide single crystal particle and method for producing the same
US-12018401-B2 · Jun 25, 2024 · US
SiC SUBSTRATE SiC COMPOSITE SUBSTRATE
US-2024186380-A1 · Jun 6, 2024 · US
Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US-2024162037-A1 · May 16, 2024 · US
SiC SINGLE CRYSTAL SUBSTRATE AND PRODUCTION METHOD THEREFOR
US-2024141544-A1 · May 2, 2024 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Ngk Insulators Ltd | 73 |
| Tokyo Electron Ltd | 33 |
| Asm Ip Holding Bv | 14 |
| Mizuno Kk | 6 |
| Chuo Ind Ltd | 5 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10P14/24 | 23 |
| H01J37/32192 | 23 |
| H10P14/2926 | 22 |
| C30B29/16 | 21 |
| H01J37/3222 | 18 |