Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE
US-2015380500-A1 · Dec 31, 2015 · US
Gallium oxide single crystal particle and method for producing the same
US12018401B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12018401-B2 |
| Application number | US-202218067834-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 19, 2022 |
| Priority date | Oct 8, 2020 |
| Publication date | Jun 25, 2024 |
| Grant date | Jun 25, 2024 |
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Abstract
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A gallium oxide single crystal particle according to the present invention is an α-Ga 2 O 3 single crystal particle and has a diameter and a height that exceed 100 μm.
First claim
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What is claimed is: 1. A gallium oxide single crystal particle being an α-Ga 2 O 3 single crystal particle, the gallium oxide single crystal particle having a diameter and a height that exceed 100 μm, wherein a Raman peak closest to a Raman shift of 690 cm −1 has a half-width of 20 cm −1 or less, and wherein a surface of the gallium oxide single crystal particle has a surface roughness Ra of 100 nm or less. 2. The gallium oxide single crystal particle according to claim 1 , wherein a proportion of Ga atoms to O atoms is 0.70 to 1.00. 3. The gallium oxide single crystal particle according to claim 1 , wherein an X-ray rocking curve of at least one of (006) or (104) planes has a half-width of 300 arcsec or less. 4. The gallium oxide single crystal particle according to claim 1 , wherein a content of an alkali metal element is 1.2×10 15 to 1.0×10 18 atoms/cm 3 . 5. A method for producing the gallium oxide single crystal particle according to claim 1 , the method comprising: bringing an aqueous solution including a Ga ion, the aqueous solution having a pH of 9.0 to 11.0, into a supercritical state having a temperature of 390° C. or more and a pressure of 22.1 MPa or more to form an α-Ga 2 O 3 single crystal particle having a diameter and a height that exceed 100 μm. 6. The method for producing a gallium oxide single crystal particle according to claim 5 , wherein gallium oxide hydroxide is added to the aqueous solution before the aqueous solution is brought into the supercritical state having a temperature of 390° C. or more and a pressure of 22.1 MPa or more. 7. The method for producing a gallium oxide single crystal particle according to claim 5 , wherein the aqueous solution includes an alkali metal element.
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- What does patent US12018401B2 cover?
- A gallium oxide single crystal particle according to the present invention is an α-Ga 2 O 3 single crystal particle and has a diameter and a height that exceed 100 μm.
- Who is the assignee on this patent?
- Ngk Insulators Ltd
- What technology area does this patent fall under?
- Primary CPC classification C30B29/16. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jun 25 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).