SiC semiconductor device
US-12080760-B2 · Sep 3, 2024 · US
RARE EARTH-CONTAINING SiC SUBSTRATE AND SiC COMPOSITE SUBSTRATE
US2024250127A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2024250127-A1 |
| Application number | US-202418441143-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 14, 2024 |
| Priority date | Oct 12, 2021 |
| Publication date | Jul 25, 2024 |
| Grant date | — |
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- Title
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Abstract
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Provided is a rare earth-containing SiC substrate including a biaxially oriented SiC layer wherein a ratio of a concentration C B of B to a concentration C RE of a rare earth element, C B /C RE , is 1.0×10 −2 to 1.0×10 5 .
First claim
Opening claim text (preview).
What is claimed is: 1 . A rare earth-containing SiC substrate comprising a biaxially oriented SiC layer wherein a ratio of a concentration C B of B to a concentration C RE of a rare earth element, C B /C RE , is 1.0×10 −2 to 1.0×10 5 . 2 . The rare earth-containing SiC substrate according to claim 1 , wherein the ratio C B /C RE is 1.0×10 0 to 1.0×10 4 . 3 . The rare earth-containing SiC substrate according to claim 1 , wherein the concentration C RE of the rare earth element is 3.0×10 13 to 9.0×10 15 atoms/cm 3 . 4 . The rare earth-containing SiC substrate according to claim 1 , wherein the concentration C RE of the rare earth element is 1.0×10 14 to 9.0×10 15 atoms/cm 3 . 5 . The rare earth-containing SiC substrate according to claim 1 , wherein the concentration C B of B is 4.5×10 14 to 1.0×10 18 atoms/cm 3 . 6 . The rare earth-containing SiC substrate according to claim 1 , wherein the concentration C B of B is 1.0×10 15 to 1.0×10 18 atoms/cm 3 . 7 . The rare earth-containing SiC substrate according to claim 1 , wherein the rare earth element is Y and/or Ce. 8 . The rare earth-containing SiC substrate according to claim 1 , wherein the rare earth element is Y. 9 . The rare earth-containing SiC substrate according to claim 1 , wherein the biaxially oriented SiC layer is oriented in the c-axis direction and the a-axis direction. 10 . A SiC composite substrate comprising: a SiC single crystal substrate; and the rare earth-containing SiC substrate according to claim 1 on the SiC single crystal substrate.
Assignees
Inventors
Classifications
Carbides · CPC title
by thermal treatment, e.g. strain annealing (C30B1/12 takes precedence) · CPC title
- H10D62/8325Primary
Silicon carbide · CPC title
based on silicon carbide · CPC title
- H01L29/1608Primary
Electricity · mapped topic
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- What does patent US2024250127A1 cover?
- Provided is a rare earth-containing SiC substrate including a biaxially oriented SiC layer wherein a ratio of a concentration C B of B to a concentration C RE of a rare earth element, C B /C RE , is 1.0×10 −2 to 1.0×10 5 .
- Who is the assignee on this patent?
- Ngk Insulators Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D62/8325. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Jul 25 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).