Composite substrate, method for producing composite substrate, and method for producing gallium oxide crystal film
US-2024003043-A1 · Jan 4, 2024 · US
α-Ga2O3 semiconductor film
US12406845B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12406845-B2 |
| Application number | US-202217653146-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 2, 2022 |
| Priority date | Sep 30, 2019 |
| Publication date | Sep 2, 2025 |
| Grant date | Sep 2, 2025 |
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Abstract
Official abstract text for this publication.
An α-Ga 2 O 3 semiconductor film according to the present invention has a measurement point (dark spot) with a maximum emission intensity A of not more than 0.6 times the average value X of top 5% of the maximum emission intensities A at all measurement points in intensity mapping of plane cathodoluminescence, wherein the maximum emission intensity A at each measurement point is determined in the wavelength range of 250 to 365 nm.
First claim
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What is claimed is: 1. An α-Ga 2 O 3 semiconductor film having a dark spot, which is defined as a measurement point with a maximum emission intensity A of not more than 0.6 times an average value X of top 5% of the maximum emission intensities A at all measurement points in intensity mapping of plane cathodoluminescence, wherein the maximum emission intensity A at each measurement point is determined in a wavelength range of 250 to 365 nm. 2. The α-Ga 2 O 3 semiconductor film according to claim 1 , wherein a ratio R of the number of dark spots to the number of all measurement points ranges from 0.005 to 0.200. 3. The α-Ga 2 O 3 semiconductor film according to claim 2 , wherein the ratio R ranges from 0.050 to 0.200.
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Classifications
Surface structures · CPC title
being crystalline insulating materials · CPC title
being semiconductor metal oxides (Group IIB-VIA materials H10P14/2913) · CPC title
using solutions · CPC title
using chemical vapour deposition [CVD] · CPC title
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- What does patent US12406845B2 cover?
- An α-Ga 2 O 3 semiconductor film according to the present invention has a measurement point (dark spot) with a maximum emission intensity A of not more than 0.6 times the average value X of top 5% of the maximum emission intensities A at all measurement points in intensity mapping of plane cathodoluminescence, wherein the maximum emission intensity A at each measurement point is determined in …
- Who is the assignee on this patent?
- Ngk Insulators Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P14/3434. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 02 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).