Rare earth-containing SiC substrate and method for producing SiC epitaxial layer

Patent metadata

Field	Value
Publication number	US-12424440-B2
Application number	US-202217805234-A
Country	US
Kind code	B2
Filing date	Jun 3, 2022
Priority date	Jan 24, 2020
Publication date	Sep 23, 2025
Grant date	Sep 23, 2025

Abstract

A rare earth-containing SiC substrate includes a rare earth element and Al. A concentration of the rare earth element is from 1×10 16 atoms/cm 3 to 1×10 19 atoms/cm 3 inclusive and a concentration of Al is from 1×10 16 atoms/cm 3 to 1×10 21 atoms/cm 3 inclusive.

First claim

What is claimed is:

1. A rare earth-containing SiC substrate comprising a rare earth element, Al, and N, wherein a concentration of the rare earth element is from 1×10 16 atoms/cm 3 to 1×10 19 atoms/cm 3 inclusive, a concentration of Al is from 1×10 16 atoms/cm 3 to 1×10 21 atoms/cm 3 inclusive, a concentration of N is from 1×10 17 atoms/cm 3 to 1×10 22 atoms/cm 3 inclusive, and unevenness in the concentration of the rare earth element in a depth direction is 0.9 or more and 2.0 or less as expressed by a coefficient of variation.

2. The rare earth-containing SiC substrate according to claim 1 , wherein (the concentration of Al)/(the concentration of the rare earth element) is from 1×10 −2 to 1×10 5 inclusive.

3. The rare earth-containing SiC substrate according to claim 1 , wherein (the concentration of N)/(the concentration of the rare earth element) is from 1×10 -−2 to 1×10 5 inclusive.

4. The rare earth-containing SiC substrate according to claim 1 , wherein the rare earth element is at least one selected from the group consisting of Y, Sm, Ho, Dy, and Yb.

5. The rare earth-containing SiC substrate according to claim 1 , wherein the rare earth-containing SiC substrate is oriented in both a c-axis direction and an a-axis direction.

6. A method for producing a SiC epitaxial layer, the method comprising supplying a raw material gas for producing SiC to a surface of the rare earth-containing SiC substrate according to claim 1 to thereby form a SiC epitaxial layer on the surface of the rare earth-containing SiC substrate.

7. The rare earth-containing SiC substrate according to claim 5 , wherein, in an inverse pole figure map of the rare earth-containing SiC substrate obtained by using the EBSD method, the following four conditions are satisfied: (A) the rare earth-containing SiC substrate is oriented along a first axis that extends in the substantially normal direction substantially normal to a plate surface of the rare earth-containing SiC substrate; (B) the rare earth-containing SiC substrate is oriented along a second axis that is orthogonal to the first axis and extends in the substantially in-plane plate surface direction of the rare earth-containing SiC substrate; (C) the inclination angles of the rare earth-containing SiC substrate with respect to the first axis are distributed within ±10°; and (D) the inclination angles of the rare earth-containing SiC substrate with respect to the second axis are distributed within ±10°.

8. A SiC composite substrate comprising a SiC single crystal layer and the rare earth-containing SiC substrate according to claim 1 , wherein the SiC single crystal layer contains BPDs and the density of BPDs is 1×10 5 /cm 2 or less.

Assignees

• Ngk Insulators Ltd

Inventors

• Matsushima Kiyoshi
• Watanabe Morimichi
• Yoshikawa Jun

Classifications

• H10P14/3802

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title

• H10P14/3466

  Crystal orientation · CPC title

• H10P14/3446

  Transition metal elements; Rare earth elements · CPC title

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/2926

  Crystal orientations · CPC title